LEADER 01650oam  2200493zu 450 
001 9911004815503321
005 20210806235824.0
010   $a1-59124-826-4
035   $a(CKB)1000000000210809
035   $a(SSID)ssj0000072808
035   $a(PQKBManifestationID)11997326
035   $a(PQKBTitleCode)TC0000072808
035   $a(PQKBWorkID)10115639
035   $a(PQKB)10898418
035   $a(EXLCZ)991000000000210809
100   $a20160829d1993      uy 
101 0 $aeng
181   $ctxt
182   $cc
183   $acr
200 00$aProperties of lattice-matched and strained indium gallium arsenide
210 31$a[Place of publication not identified]$cINSPEC Institution of Electrical Engineers$d1993
225 0 $aEMIS datareviews series  Properties of lattice-matched and strained indium gallium arsenide 
300   $aBibliographic Level Mode of Issuance: Monograph
311   $a0-85296-865-5 
606   $aGallium arsenide semiconductors
606   $aIndium alloys
606   $aPhysics$2HILCC
606   $aPhysical Sciences & Mathematics$2HILCC
606   $aElectricity & Magnetism$2HILCC
610 0 $aSemiconductors$aElectronic properties
615  0$aGallium arsenide semiconductors.
615  0$aIndium alloys.
615  7$aPhysics
615  7$aPhysical Sciences & Mathematics
615  7$aElectricity & Magnetism
676   $a537.6/223
702   $aBhattacharya$b Pallab
712 02$aINSPEC (Information service)
801  0$bPQKB
906   $aBOOK
912   $a9911004815503321
996   $aProperties of lattice-matched and strained indium gallium arsenide$94388028
997   $aUNINA