LEADER 03533nam 2200649Ia 450 001 9911004764603321 005 20200520144314.0 010 $a1-107-20583-2 010 $a0-511-84992-3 010 $a1-282-53604-4 010 $a9786612536045 010 $a0-511-67831-2 010 $a0-511-68154-2 010 $a0-511-67705-7 010 $a0-511-68352-9 010 $a0-511-68477-0 010 $a0-511-67620-4 010 $a0-511-67956-4 035 $a(CKB)2670000000014114 035 $a(EBL)501320 035 $a(OCoLC)609860326 035 $a(SSID)ssj0000362731 035 $a(PQKBManifestationID)11304656 035 $a(PQKBTitleCode)TC0000362731 035 $a(PQKBWorkID)10381939 035 $a(PQKB)11468020 035 $a(UkCbUP)CR9780511676208 035 $a(MiAaPQ)EBC501320 035 $a(PPN)261336509 035 $a(EXLCZ)992670000000014114 100 $a20091208d2010 uy 0 101 0 $aeng 135 $aur||||||||||| 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 10$aMagnetic memory $efundamentals and technology /$fDenny D. Tang and Yuan-Jen Lee 210 $aNew York $cCambridge University Press$d2010 215 $a1 online resource (x, 196 pages) $cdigital, PDF file(s) 300 $aTitle from publisher's bibliographic system (viewed on 05 Oct 2015). 311 $a0-521-44964-2 327 $aMachine generated contents note: 1. Basic magnetostatics; 2. Magnetic films; 3. Properties of patterned ferromagnetic film; 4. Magnetoresistance effects and memory devices; 5. Field-write mode MRAMs; 6. Spin torque transfer MRAM; 7. Applications of MTJ based technology; Appendices: A. Unit conversion table cgs vs. SI; B. Dimensions of magnetism; C. Physical constants; D. Normal (Gaussian) distribution and quantile plot; E. Weibull distribution; F. TDDB reliability test of thin film; G. Binomial distribution and Poisson distribution; H. Defect density; I. Fe, Co, Ni element chemistry parameters; J. Soft error, hard fail and design margin. 330 $aIf you are a semiconductor engineer or a magnetics physicist developing magnetic memory, get the information you need with this, the first book on magnetic memory. From magnetics to the engineering design of memory, this practical book explains key magnetic properties and how they are related to memory performance, characterization methods of magnetic films, and tunneling magnetoresistance effect devices. It also covers memory cell options, array architecture, circuit models, and read-write engineering issues. You'll understand the soft fail nature of magnetic memory, which is very different from that of semiconductor memory, as well as methods to deal with the issue. You'll also get invaluable problem-solving insights from real-world memory case studies. This is an essential book for semiconductor engineers who need to understand magnetics, and for magnetics physicists who work with MRAM. It is also a valuable reference for graduate students working in electronic/magnetic device research. 606 $aMagnetic memory (Computers) 606 $aComputer storage devices 615 0$aMagnetic memory (Computers) 615 0$aComputer storage devices. 676 $a621.39/73 700 $aTang$b Denny D$01689696 701 $aLee$b Yuan-Jen$01822368 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9911004764603321 996 $aMagnetic memory$94388528 997 $aUNINA