LEADER 03753nam 2200673 a 450 001 9911004740003321 005 20200520144314.0 010 $a9780857093752 010 $a0857093754 035 $a(CKB)2670000000114644 035 $a(EBL)1584656 035 $a(OCoLC)867318358 035 $a(SSID)ssj0000596223 035 $a(PQKBManifestationID)12253836 035 $a(PQKBTitleCode)TC0000596223 035 $a(PQKBWorkID)10574426 035 $a(PQKB)11241663 035 $a(MiAaPQ)EBC1584656 035 $a(CaSebORM)9781845699376 035 $a(OCoLC)880416293 035 $a(OCoLC)ocn880416293 035 $a(EXLCZ)992670000000114644 100 $a20110722d2011 uy 0 101 0 $aeng 135 $aur|n|---||||| 181 $ctxt 182 $cc 183 $acr 200 00$aElectromigration in thin films and electronic devices $ematerials and reliability /$fedited by Choong-Un Kim 205 $a1st edition 210 $aOxford ;$aPhiladelphia $cWoodhead Pub.$dc2011 215 $a1 online resource (353 p.) 225 1 $aWoodhead Publishing Series in Electronic and Optical Materials 300 $aDescription based upon print version of record. 311 08$a9781613443910 311 08$a1613443919 311 08$a9781845699376 311 08$a1845699378 320 $aIncludes bibliographical references and index. 327 $aPart I. Introduction. Modeling electromigration phenomena / F. Cacho and X. Federspiel ; Modeling electromigratoin using the peridynamics approach / D.T. Read and V.K. Tewary and W.H. Gerstle ; Modeling, simulation and X-ray microbeam studies of electromigration / A.M. Maniatty, G.S. Cargill III, and H. Zhang -- Part II. Electromigration in copper interconnects. X-ray microbeam analysis of electromigration in copper inteerconnects / H. Zhang and G.S. Cargill III ; Voiding in copper interconnects during electromigration / C.L. Gan and M.K. Lim ; The evolution of microstructure in copper interconnects during electromigration / A.S> Budiman ; Scaling effects on electromigration reliability of copper interconnects / L. Zhang, J.W. Pyun, and P.S. Ho ; Electromigration failure in nanoscale copper interconnects / E.T. Ogawa -- Part III. Electromigration in solder. Electromigration-induced microstructural evolution in lead-free and lead-tin solders / K.-L. Lin ; Electromigration in flip-chip solder joints / D. Yang and Y.C. Chan and M. Pecht. 330 $aUnderstanding and limiting electromigration in thin films is essential to the continued development of advanced copper interconnects for integrated circuits. Electromigration in thin films and electronic devices provides an up-to-date review of key topics in this commercially important area.Part one consists of three introductory chapters, covering modelling of electromigration phenomena, modelling electromigration using the peridynamics approach and simulation and x-ray microbeam studies of electromigration. Part two deals with electromigration issues in copper interconnects, includin 410 0$aWoodhead Publishing Series in Electronic and Optical Materials 606 $aIntegrated circuits$xDeterioration 606 $aElectrodiffusion 606 $aThin films 606 $aInterconnects (Integrated circuit technology) 615 0$aIntegrated circuits$xDeterioration. 615 0$aElectrodiffusion. 615 0$aThin films. 615 0$aInterconnects (Integrated circuit technology) 676 $a621.38152 701 $aKim$b Choong-Un$01823913 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9911004740003321 996 $aElectromigration in thin films and electronic devices$94390856 997 $aUNINA