LEADER 04185nam 22006615 450 001 9911003588303321 005 20251028181802.0 010 $a9783031866302$b(eBook) 024 7 $a10.1007/978-3-031-86630-2 035 $a(CKB)38859349300041 035 $a(DE-He213)978-3-031-86630-2 035 $a(MiAaPQ)EBC32125201 035 $a(Au-PeEL)EBL32125201 035 $a(EXLCZ)9938859349300041 100 $a20250519h20252025 uy 0 101 0 $aeng 135 $aur||||||||||| 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 14$aThe BaSIC topology $ea revolutionary power device control strategy /$fB. Jayant Baliga, Ajit Kanale 210 1$aCham :$cSpringer,$d[2025] 210 4$dİ2025 215 $a1 online resource (xxii, 316 pages) $cillustrations 311 08$a9783031866296 320 $aIncludes bibliographical references and index. 327 $aIntroduction -- Short-circuit withstand capability -- Conventional current sensing in devices -- The BaSIC topology concept -- Application of the BaSIC Topology to Si IGBTs -- Application of the BaSIC Topology to SiC Power MOSFETs -- Application of the BaSIC Topology to GaN HEMT devices -- Current Sensing using the BaSIC Topology -- Eliminating repetitive short-circuit failure using the BaSIC Topology -- Avalanche ruggedness of the BaSIC Topology to GaN HEMT devices -- Optimization of Silicon Depletion-Mode MOSFETs for the BaSIC Topology -- Selection Methodology for Silicon Enhancement-Mode MOSFETs for the BaSIC Topology -- Comparison of the BaSIC Topology to the conventional DESAT topology -- Synopsys. 330 $aThe BaSIC topology is a revolutionary method for controlling power semiconductor devices. It enables monitoring the current flow through the devices while providing a unique current limiting capability that enhances their short-circuit withstand capability. The book describes the BaSIC topology concept and contrasts it with previous approaches. It provides an extensive description of the application of the BaSIC topology to silicon IGBTs, silicon carbide power MOSFETs, and GaN HEMT devices. The ability to extend the short-circuit withstand time to over 10 ms for SiC power MOSFETs has been achieved for the first time with the BaSIC topology. The BaSIC topology is the only approach shown to eliminate the failure of these devices under repetitive short-circuit events. The sensing of current in paralleled devices is demonstrated, eliminating the need for external sensors. The BaSIC topology has utility for various power electronics applications, including electric vehicles and industrial motor drives. Introduces the BaSIC topology ? a revolutionary new approach for the control of power devices; Describes the application of the BaSIC topology to silicon IGBTs, silicon carbide power MOSFETs, and GaN HEMT devices; Written by the inventor of the insulated-gate bipolar transistor (IGBT) and the BaSIC topology concept. 606 $aPower semiconductors 606 $aElectric power production 606 $aPower electronics 606 $aElectronic circuits 606 $aElectronics 606 $aElectric power production 606 $aPower Electronics 606 $aElectronic Circuits and Systems 606 $aElectronics and Microelectronics, Instrumentation 606 $aElectrical Power Engineering 615 0$aPower semiconductors. 615 0$aElectric power production. 615 0$aPower electronics. 615 0$aElectronic circuits. 615 0$aElectronics. 615 0$aElectric power production. 615 14$aPower Electronics. 615 24$aElectronic Circuits and Systems. 615 24$aElectronics and Microelectronics, Instrumentation. 615 24$aElectrical Power Engineering. 676 $a621.381044 700 $aBaliga$b B. Jayant$4aut$4http://id.loc.gov/vocabulary/relators/aut$07722 702 $aKanale$b Ajit$4aut$4http://id.loc.gov/vocabulary/relators/aut 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9911003588303321 996 $aThe BaSIC Topology$94384284 997 $aUNINA