LEADER 01075nam--2200385---450- 001 990003375080203316 005 20100301141056.0 010 $a88-06-14114-7 035 $a000337508 035 $aUSA01000337508 035 $a(ALEPH)000337508USA01 035 $a000337508 100 $a20100301d1998----km-y0itay50------ba 101 $aita 102 $aIT 105 $a||||||||001yy 200 1 $aRitratto di un secolo$fIzrail Metter$gtraduzione e cura di Anna Raffetto 210 $aTorino$cEinaudi$dcopyr. 1998 215 $aXVIII, 343 p.$d20 cm 225 2 $aEinaudi tascabili$v563 410 0$12001$aEinaudi tascabili 454 1$12001 461 1$1001-------$12001 606 0 $aNarrativa russa$z1945-1990 676 $a891.7344 700 1$aMETTER,$bIzrail Moiseevic$0607160 702 1$aRAFFETTO,$bAnna 801 0$aIT$bsalbc$gISBD 912 $a990003375080203316 951 $aII.7.A.175$b4692 DSLL 959 $aBK 969 $aDSLL 979 $aDSLL$b90$c20100301$lUSA01$h1410 996 $aRitratto di un secolo$91123162 997 $aUNISA LEADER 03417nam 2200733Ia 450 001 9910971684903321 005 20200520144314.0 010 $a9780791483565 010 $a0791483568 010 $a9781423743965 010 $a1423743962 024 7 $a10.1515/9780791483565 035 $a(CKB)1000000000458793 035 $a(OCoLC)461441961 035 $a(CaPaEBR)ebrary10579126 035 $a(SSID)ssj0000195296 035 $a(PQKBManifestationID)11937279 035 $a(PQKBTitleCode)TC0000195296 035 $a(PQKBWorkID)10243577 035 $a(PQKB)10040497 035 $a(OCoLC)62745011 035 $a(MdBmJHUP)muse6262 035 $a(Au-PeEL)EBL3407703 035 $a(CaPaEBR)ebr10579126 035 $a(OCoLC)923408290 035 $a(DE-B1597)682086 035 $a(DE-B1597)9780791483565 035 $a(MiAaPQ)EBC3407703 035 $a(Perlego)2672741 035 $a(EXLCZ)991000000000458793 100 $a20040402d2005 ub 0 101 0 $aeng 135 $aurcn||||||||| 181 $ctxt 182 $cc 183 $acr 200 10$aMadness and death in philosophy /$fFerit Guven 210 $aAlbany $cState University of New York Press$dc2005 215 $a1 online resource (233 p.) 225 1 $aSUNY series in contemporary continental philosophy 300 $aBibliographic Level Mode of Issuance: Monograph 311 08$a9780791463949 311 08$a079146394X 311 08$a9780791463932 311 08$a0791463931 320 $aIncludes bibliographical references (p. 165-210) and index. 327 $aPlato : death and madness in the Phaedo and Phaedrus -- Hegel : the madness of the soul and the death of spirit -- Heidegger : death as negativity -- Heidegger : madness, negativity, truth, and history -- Foucault : the history of madness -- Conclusion : madness is not a thing of the past. 330 $aFerit Güven illuminates the historically constitutive roles of madness and death in philosophy by examining them in the light of contemporary discussions of the intersection of power and knowledge and ethical relations with the other. Historically, as Güven shows, philosophical treatments of madness and death have limited or subdued their disruptive quality. Madness and death are linked to the question of how to conceptualize the unthinkable, but Güven illustrates how this conceptualization results in a reduction to positivity of the very radical negativity these moments represent. Tracing this problematic through Plato, Hegel, Heidegger, and, finally, in the debate on madness between Foucault and Derrida, Güven gestures toward a nonreducible, disruptive form of negativity, articulated in Heidegger's critique of Hegel and Foucault's engagement with Derrida, that might allow for the preservation of real otherness and open the possibility of a true ethics of difference. 410 0$aSUNY series in contemporary continental philosophy. 606 $aDeath$xHistory 606 $aInsanity (Law)$xHistory 606 $aPhilosophy$xHistory 615 0$aDeath$xHistory. 615 0$aInsanity (Law)$xHistory. 615 0$aPhilosophy$xHistory. 676 $a128/.5 700 $aGuven$b Ferit$f1966-$01526413 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910971684903321 996 $aMadness and death in philosophy$94352328 997 $aUNINA LEADER 04769nam 2200709 a 450 001 9911006806203321 005 20200520144314.0 010 $a1-107-21590-0 010 $a1-282-97823-3 010 $a9786612978234 010 $a0-511-93186-7 010 $a0-511-97385-3 010 $a0-511-92375-9 010 $a0-511-93322-3 010 $a0-511-92801-7 010 $a0-511-92548-4 010 $a0-511-93052-6 035 $a(CKB)2670000000068471 035 $a(EBL)605001 035 $a(OCoLC)700697483 035 $a(SSID)ssj0000471561 035 $a(PQKBManifestationID)11973351 035 $a(PQKBTitleCode)TC0000471561 035 $a(PQKBWorkID)10428563 035 $a(PQKB)10518346 035 $a(UkCbUP)CR9780511973857 035 $a(MiAaPQ)EBC605001 035 $a(PPN)26136426X 035 $a(EXLCZ)992670000000068471 100 $a20101207d2011 uy 0 101 0 $aeng 135 $aur||||||||||| 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 10$aNanoscale MOS transistors $esemi-classical transport and applications /$fDavid Esseni, Pierpaolo Palestri, and Luca Selmi 210 $aCambridge ;$aNew York $cCambridge University Press$d2011 215 $a1 online resource (xvii, 470 pages) $cdigital, PDF file(s) 300 $aTitle from publisher's bibliographic system (viewed on 05 Oct 2015). 311 $a0-521-51684-6 320 $aIncludes bibliographical references and index. 327 $aMachine generated contents note: 1. Introduction; 2. Bulk semiconductors and the semi-classical model; 3. Quantum confined inversion layers; 4. Carrier scattering in silicon MOS transistors; 5. The Boltzmann transport equation; 6. The Monte Carlo method for the Boltzmann transport equation; 7. Simulation of bulk and SOI silicon MOSFETs; 8. MOS transistors with arbitrary crystal orientation; 9. MOS transistors with strained silicon channels; 10. MOS transistors with alternative materials; Appendix A. Mathematical definitions and properties; Appendix B. Integrals and transformations over a finite area A; Appendix C. Calculation of the equi-energy lines with the k-p model; Appendix D. Matrix elements beyond the envelope function approximation; Appendix E. Charge density produced by a perturbation potential. 330 $a"Written from an engineering standpoint, this book provides the theoretical background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOS nanoscale transistors. A wealth of applications, illustrations and examples connect the methods described to all the latest issues in nanoscale MOSFET design. Key areas covered include: Transport in arbitrary crystal orientations and strain conditions, and new channel and gate stack materials All the relevant transport regimes, ranging from low field mobility to quasi-ballistic transport, described using a single modeling framework Predictive capabilities of device models, discussed with systematic comparisons to experimental results"--$cProvided by publisher. 330 $a"The traditional geometrical scaling of the CMOS technologies has recently evolved in a generalized scaling scenario where material innovations for different intrinsic regions of MOS transistors as well as new device architectures are considered as the main routes toward further performance improvements. In this regard, high-? dielectrics are used to reduce the gate leakage with respect to the SiO2 for a given drive capacitance, while the on-current of the MOS transistors is improved by using strained silicon and possibly with the introduction of alternative channel materials. Moreover, the ultra-thin body Silicon-On-Insulator (SOI) device architecture shows an excellent scalability even with a very lightly doped silicon film, while non-planar FinFETs are also of particular interest, because they are a viable way to obtain double-gate SOI MOSFETs and to realize in the same fabrication process n-MOS and p-MOS devices with different crystal orientations"--$cProvided by publisher. 606 $aMetal oxide semiconductors$xDesign and construction 606 $aElectron transport 606 $aNanoelectronics 615 0$aMetal oxide semiconductors$xDesign and construction. 615 0$aElectron transport. 615 0$aNanoelectronics. 676 $a004.5/3 686 $aTEC008080$2bisacsh 700 $aEsseni$b D$g(David)$01824104 701 $aPalestri$b P$g(Pierpaolo)$01824105 701 $aSelmi$b L$g(Luca)$01824106 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9911006806203321 996 $aNanoscale MOS transistors$94391166 997 $aUNINA