LEADER 07291nam 2200745 a 450 001 9910971215103321 005 20251116140724.0 010 $a9786610192762 010 $a9780309176057 010 $a0309176050 010 $a9781280192760 010 $a1280192763 010 $a9780309596534 010 $a030959653X 010 $a9780585084695 010 $a0585084696 035 $a(CKB)110986584751674 035 $a(OCoLC)614702456 035 $a(CaPaEBR)ebrary10056927 035 $a(SSID)ssj0000198972 035 $a(PQKBManifestationID)11180609 035 $a(PQKBTitleCode)TC0000198972 035 $a(PQKBWorkID)10184299 035 $a(PQKB)10508762 035 $a(MiAaPQ)EBC3376651 035 $a(Au-PeEL)EBL3376651 035 $a(CaPaEBR)ebr10056927 035 $a(CaONFJC)MIL19276 035 $a(OCoLC)923265287 035 $a(Perlego)4737118 035 $a(BIP)47022128 035 $a(EXLCZ)99110986584751674 100 $a19950905d1995 uy 0 101 0 $aeng 135 $aurcn||||||||| 181 $ctxt 182 $cc 183 $acr 200 00$aMaterials for high-temperature semiconductor devices /$fCommittee on Materials for High-Temperature Semiconductor Devices, National Materials Advisory Board, Commission on Engineering and Technical Systems, National Research Council 205 $a1st ed. 210 $aWashington, D.C. $cNational Academy Press$dc1995 215 $a1 online resource (135 p.) 300 $a"NMAB-474." 311 08$a9780309053358 311 08$a0309053358 320 $aIncludes bibliographical references. 327 $aMaterials For High-Temperature Semiconductor Devices -- Copyright -- Abstract -- Preface -- Acknowledgements -- Contents -- Executive Summary -- GENERAL CONCLUSIONS AND RECOMMENDATIONS -- Temperature Ranges -- U.S. Competitiveness -- Demonstration Technologies -- Funding Strategy -- MATERIALS-SPECIFIC CONCLUSIONS AND RECOMMENDATIONS -- Silicon Carbide -- Nitrides -- Diamond -- Packaging -- 1 Background -- SURVEY I: APPLICATIONS OF HIGH-TEMPERATURE ELECTRONICS BY INDUSTRY -- Automotive -- Aerospace -- Gas Turbine Engines -- Other Aerospace Applications -- Space Vehicles And Exploration -- Nuclear Power -- Petroleum Exploration -- Industrial Process Control -- Power Electronics -- SURVEY II: APPLICATIONS BY THERMAL ENVIRONMENT -- SURVEY III: HIGH-TEMPERATURE ELECTORNIS APPLICATIONS BY COMPLEXITY -- SUMMARY -- 2 State Of The Art Of Wide Bandgap Materials -- SILICON CARBIDE -- Materials Description And Properties -- Methods Of Fabrication -- Bulk Growth -- Background -- Current Status -- Epitaxial Growth -- Background -- CVD Of ?-SiC Epitaxial Films -- SiC Epitaxy In The c-Axis Direction -- SiC Epitaxy In The a-Axis Direction -- Hetero-Epitaxial Growth Of 3C-SiC Films -- Other Epitaxial Processes -- Summary -- NITRIDE MATERIALS -- Properties -- Crystal Growth -- DIAMOND -- Materials Description And Properties -- Methods Of Synthesis And Characterization -- Synthesis -- Characterization -- Diamond Processing -- 3 Device Physics: Behavior at Elevated Temperatures -- HIGH-TEMPERATURE EFFECTS: FUNDAMENTAL, MATERIALS-RELATED PROPERTIES -- Carrier Mobilities -- Intrinsic Carrier Concentrations: Dependence on Bandgap Energy and Temperature -- PREDICTING HIGH-TEMPERATURE-DEVICE PERFORMANCE: MATERIALS-RELATED FIGURES OF MERIT -- Device Physics At High Temperatures -- Junction Leakage: p-n Junctions And Diodes -- Schottky Leakage -- Threshold Voltage Shifts. 327 $aChoice Of High-Temperature-Device Technologies -- 4 Generic Technical Issues Associated With Materials For High-Temperature Semiconductors -- ELECTRICAL CONTACTS -- Schottky Contacts To SiC -- Ohmic Contacts To SiC -- Ohmic Contacts To GaN -- DOPING AND IMPLANTATION -- Doping Of SiC -- Doping Of GaN -- Doping Of AlN -- Doping Of Diamond -- GATE OXIDES AND INSULATORS -- Gate Oxides And Insulators For SiC -- Gate Oxides And Insulators For The Nitrides -- Gate Oxides And Insulators For Diamond -- ETCHING -- Etching Of SiC -- Etching Of The Nitrides: GaN And AlN -- Etching Of Diamond -- DEFECT ENGINEERING AND CONTROL -- YIELD -- DEVICE RELIABILITY -- 5 High-Temperature Electronic Packaging -- CHIP PACKAGING -- SUBSTRATES -- THICK-FILM AND THIN-FILM METALLIZATION -- COMPONENT ATTACHMENT -- INTERCONNECTION -- SECOND-LEVEL PACKAGING -- SUMMARY -- 6 Device Testing For High-Temperature Electronic Materials -- SHORT-TERM CONSTANT-TEMPERATURE TESTS -- CONSTANT-TEMPERATURE LIFE TEST -- THERMAL-CYCLING TESTS -- FUTURE REQUIREMENTS FOR HIGH-TEMPERATURE TESTING -- 7 Conclusions And Recommendations -- GENERAL CONCLUSIONS AND RECOMMENDATIONS -- Temperature Ranges -- U.S. Competitiveness -- Demonstration Technologies -- Funding Strategy -- MATERIALS-SPECIFIC CONCLUSIONS AND RECOMMENDATIONS -- Silicon Carbide -- Nitrides -- Diamond -- Packaging -- References -- Appendix A: Silicon As A High-Temperature Material -- HIGH-TEMPERATURE OPERATION OF SILICON CIRCUITS -- Bipolar Analog Circuits -- Bipolar Digital Circuits -- FET Analog Circuits -- Digital Cmos -- DIELECTRIC ISOLATION TECHNOLOGY -- Wafer Bonding -- SIMOX -- Lateral Isolation -- APPLICATIONS TO DEVICE TECHNOLOGY -- Bipolar-Junction-Transistor Applications In SOI Technology -- Cmos Applications In SOI -- REFERENCES -- Appendix B: Gallium Arsenide As A High-Temperature Material. 327 $aSTATUS OF COMMERCIAL VLSI GAAS DEVICES FOR HIGH-TEMPERATURE ELECTRONICS -- APPROACHES FOR IMPROVING GAAS IC HIGH-TEMPERATURE LIMITS -- CONCLUSIONS -- REFERENCES -- Appendix C: High-Temperature Microwave Devices -- BASIC DEVICE TYPES -- Bipolar Junction Transistors -- Static Induction Transistors -- Junction Field Effect Transistors -- Metal-Semiconductor Field Effect Transistors -- Impact Avalanche Transit-Time Diodes -- EXPECTATIONS FOR WIDE BANDGAP MESFETS -- Current-Voltage Curves -- Power And Efficiency -- Mesfet Gain -- Thermal Properties Of SiC MESFETs -- Wide Bandgap Mesfets At Elevated Temperatures -- Silicon Carbide -- Gallium Nitride -- Diamond -- REFERENCES -- Appendix D: Biographical Sketches Of Committee Members. 330 $aMajor benefits to system architecture would result if cooling systems for components could be eliminated without compromising performance. This book surveys the state-of-the-art for the three major wide bandgap materials (silicon carbide, nitrides, and diamond), assesses the national and international efforts to develop these materials, identifies the technical barriers to their development and manufacture, determines the criteria for successfully packaging and integrating these devices into existing systems, and recommends future research priorities. 606 $aSemiconductors 606 $aMaterials at high temperatures 606 $aWide gap semiconductors 615 0$aSemiconductors. 615 0$aMaterials at high temperatures. 615 0$aWide gap semiconductors. 676 $a621.381/2 712 02$aNational Research Council (U.S.).$bCommittee on Materials for High-Temperature Semiconductor Devices. 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910971215103321 996 $aMaterials for high-temperature semiconductor devices$94352040 997 $aUNINA