LEADER 05864nam 2200805 a 450 001 9910967458503321 005 20251117074535.0 010 $a9786612758027 010 $a9781282758025 010 $a1282758020 010 $a9789814273022 010 $a9814273023 035 $a(CKB)2490000000001619 035 $a(EBL)1679453 035 $a(OCoLC)729020081 035 $a(SSID)ssj0000436926 035 $a(PQKBManifestationID)11315397 035 $a(PQKBTitleCode)TC0000436926 035 $a(PQKBWorkID)10431025 035 $a(PQKB)10706750 035 $a(MiAaPQ)EBC1679453 035 $a(WSP)00000553 035 $a(Au-PeEL)EBL1679453 035 $a(CaPaEBR)ebr10422356 035 $a(CaONFJC)MIL275802 035 $a(Perlego)850691 035 $a(EXLCZ)992490000000001619 100 $a20100520d2009 uy 0 101 0 $aeng 135 $aurcn||||||||| 181 $ctxt 182 $cc 183 $acr 200 10$aFrontiers in electronics /$feditors, Sorin Cristoloveanu, Michael S. Shur 205 $a1st ed. 210 $aSingapore $cWorld Scientific Pub. Co.$dc2009 215 $a1 online resource (335 p.) 225 1 $aSelected topics in electronics and systems ;$vv. 50 300 $a"The Workshop on Frontiers in Electronics -- WOFE-07 -- took place in Cozumel, in December of 2007."--P. v. 311 08$a9789814273015 311 08$a9814273015 320 $aIncludes bibliographical references and index. 327 $aCONTENTS; Preface; Chapter 1. Ultimate CMOS, Novel MOSFETS, and Alternative Transistors; Challenges and Progress in III-V MOSFETs for CMOS Circuits S. Oktyabrsky, M. Yakimov, V. Tokranov, R. Kambhampati, H. Bakhru, S. Koveshnikov, W. Tsai, F. Zhu and J. Lee; 1. Introduction; 2. MOSFET vs. HEMT; 3. Wish List for III-V CMOS; 4. Interface Passivation Technologies; 5. Amorphous Si Interface Passivation Layer; 6. Enhancement- Mode Inversion-Type MOSFET; 7. Conclusions; Acknowledgements; References 327 $aShort Channel, Floating Body, and 3D Coupling Effects in Triple-Gate MOSFET K.-I. Na, J.-H. Lee S. Cristoloveanu, Y.-H. Bae, P. Patruno and W. Xiong1. Introduction; 2. Experiment; 3. Short Channel Effect; 4. Three Dimensional Coupling Effect; 5. Gate-Induced Floating Body Effect (GIFBE); 6. Conclusions; Acknowledgments; References; Analog and Digital Performance of the Screen-Grid Field Effect Transistor (SGrFET) K. Fobelets, P. W. Ding, Y. Shadrokh and J. E. Velazquez-Perez; 1. Introduction; 2. The simulated device structures; 3. Analog RF performance of the devices 327 $a4. Digital performance of the devices 5. Conclusions; Acknowledgments; References; Analytical Characterization and Modeling of Shielded Test Structures for RF-CMOS E. Torres-Rios, R. Torres-Torres, R. Murphy-Arteaga and E. A. Gutie?rrez-D.; 1. Introduction; 2. Description of fabricated test structures; 3. General models for RF shielded test structures; 3.1 General model for the shielded test structure with pad probe design at the second metal level; 3.2 General model for the shielded test structure with pad probe design at the third metal level; 4. Equivalent circuit modeling 327 $a4.1 Calculation of the model parameters 4.2 Analytical parameter extraction; 5. Results and discussion; 6. Conclusions ; 7. Acknowledgments; References; Germanium on Sapphire H. S. Gamble, P. T. Baine, H. Wadsworth, Y. H. Low, P. V. Rainey, F. H. Ruddell, B. M. Armstrong, D. W. McNeill and S. J. N. Mitchell; 1. Introduction; 2. Semiconductor properties and applications; 3. Sapphire properties and applications; 4. Germanium on Sapphire; 5. Passives and Parasitics; 6. Optical Detection; 7. Germanium ICs; 8. Summary and Conclusions; References 327 $aSingle Event Effects in the Nano Era M. L. Alles, L. W. Massengill, R. D. Schrimpf, R. A. Weller and K. F. Galloway 1. Introduction; 2. Single Event Effects; 3. Differential Scaling; 4. Mitigation; 5. Analysis; 6. Opportunities; 7. Conclusions; Acknowledgments; References; An Efficient Numerical Method of DC Modeling for Power MOSFET, MESFET and AlGaN/GaN HEMT T. Rahman, M. A. Huque and S. K. Islam; 1. Introduction; 2. Mathematical Theory; 3. Model Development and Verification Using Analytical Data; 3.1. MOSFET; 3.2. MESFET; 4. Model Development and Verification Using Experimental Data 327 $a5. Conclusion 330 $aFrontiers in Electronics contains the selected best papers presented at the Workshop on Frontiers in Electronics (WOFE-07). This meeting was the fifth in the series of WOFE workshops, and strongly reinforced the tradition of scientific quality and visionary research. The issues addressed ranged from THz and infrared electronics to nanoelectronics and photonics. The papers focused on the fabrication, characterization and applications of nanodevices; wide band gap structures; and state-of-the-art FETs. The participants also discussed the device physics and processing issues including asp 410 0$aSelected topics in electronics and systems ;$vv. 50. 517 3 $aWOFE-07 606 $aElectronics$xTechnological innovations$vCongresses 606 $aNanoelectromechanical systems$vCongresses 606 $aOptoelectronics$vCongresses 606 $aMetal oxide semiconductors, Complementary$vCongresses 615 0$aElectronics$xTechnological innovations 615 0$aNanoelectromechanical systems 615 0$aOptoelectronics 615 0$aMetal oxide semiconductors, Complementary 676 $a621.381 701 $aCristoloveanu$b Sorin$01866290 701 $aShur$b Michael$0770441 712 12$aWorkshop on Frontiers in Electronics. 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910967458503321 996 $aFrontiers in electronics$94473663 997 $aUNINA