LEADER 03483nam 2200637 a 450 001 9910958087303321 005 20251116203616.0 010 $a9789812774521 010 $a9812774521 035 $a(CKB)1000000000410906 035 $a(DLC)2006283987 035 $a(StDuBDS)AH24684526 035 $a(SSID)ssj0000245990 035 $a(PQKBManifestationID)11238393 035 $a(PQKBTitleCode)TC0000245990 035 $a(PQKBWorkID)10180638 035 $a(PQKB)11208010 035 $a(MiAaPQ)EBC1681716 035 $a(WSP)00005986 035 $a(Au-PeEL)EBL1681716 035 $a(CaPaEBR)ebr10201386 035 $a(CaONFJC)MIL530328 035 $a(OCoLC)879074363 035 $a(Perlego)847341 035 $a(BIP)15210499 035 $a(BIP)13341426 035 $a(EXLCZ)991000000000410906 100 $a20061005d2005 uy 0 101 0 $aeng 135 $aurcn||||||||| 181 $ctxt 182 $cc 183 $acr 200 10$aSilicon carbide power devices /$fB. Jayant Baliga 205 $a1st ed. 210 $aNew Jersey $cWorld Scientific$dc2005 215 $a1 online resource (xxi, 503 p. )$cill. (some col.) 300 $aBibliographic Level Mode of Issuance: Monograph 311 08$a9789812566058 311 08$a9812566058 320 $aIncludes bibliographical references and index. 327 $ach. 1. Introduction -- ch. 2. Material properties and technology -- ch. 3. Breakdown voltage -- ch. 4. PiN rectifiers -- ch. 5. Schottky rectifiers -- ch. 6. Shielded Schottky rectifiers -- ch. 7. Metal-semiconductor field effect transistors -- ch. 8. The Baliga-pair configuration -- ch. 9. Planar power MOSFETs -- ch. 10. Shielded planar MOSFETs -- ch. 11. Trench-gate power MOSFETs -- ch. 12. Shielded trench-gate power MOSFETs -- ch. 13. Charge coupled structures -- ch. 14. Integral diodes -- ch. 15. Lateral high voltage FETs -- ch. 16. Synopsis. 330 $aPower semiconductor devices are widely used for the control and management of electrical energy. The improving performance of power devices has enabled cost reductions and efficiency increases resulting in lower fossil fuel usage and less environmental pollution. This book provides the first cohesive treatment of the physics and design of silicon carbide power devices with an emphasis on unipolar structures. It uses the results of extensive numerical simulations to elucidate the operating principles of these important devices. Sample Chapter(s). Chapter 1: Introduction (72 KB). Contents: Material Properties and Technology; Breakdown Voltage; PiN Rectifiers; Schottky Rectifiers; Shielded Schottky Rectifiers; Metal-Semiconductor Field Effect Transistors; The Baliga-Pair Configuration; Planar Power MOSFETs; Shielded Planar MOSFETs; Trench-Gate Power MOSFETs; Shielded Trendch-Gate MOSFETs; Charge Coupled Structures; Integral Diodes; Lateral High Voltage FETs; Synopsis. Readership: For practising engineers working on power devices, and as a supplementary textbook for a graduate level course on power devices. 606 $aSilicon carbide$xElectric properties 606 $aSemiconductors 615 0$aSilicon carbide$xElectric properties. 615 0$aSemiconductors. 676 $a621.3815/2 700 $aBaliga$b B. Jayant$f1948-$07722 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910958087303321 996 $aSilicon carbide power devices$94478945 997 $aUNINA