LEADER 02653nam 2200493 450 001 996546827903316 005 20230730235919.0 010 $a9789819901579$b(electronic bk.) 010 $z9789819901562 024 7 $a10.1007/978-981-99-0157-9 035 $a(MiAaPQ)EBC7220720 035 $a(Au-PeEL)EBL7220720 035 $a(OCoLC)1374431261 035 $a(DE-He213)978-981-99-0157-9 035 $a(PPN)269097325 035 $a(EXLCZ)9926347415500041 100 $a20230730d2023 uy 0 101 0 $aeng 135 $aurcnu|||||||| 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 10$aMultigate transistors for high frequency applications /$fK. Sivasankaran and Partha Sharathi Mallick 205 $a1st ed. 2023. 210 1$aSingapore :$cSpringer,$d[2023] 210 4$dİ2023 215 $a1 online resource (98 pages) 225 1 $aSpringer Tracts in Electrical and Electronics Engineering,$x2731-4219 311 08$aPrint version: Sivasankaran, K. Multigate Transistors for High Frequency Applications Singapore : Springer,c2023 9789819901562 320 $aIncludes bibliographical references. 327 $a1. Introduction -- 2. Rf Transistor and Design Challenges -- 3. Radio Frequency Stability Performance of Dg Mosfet -- 4. Radio Frequency Stability Performance of Dg Tunnel Fet -- 5. Radio Frequency Stability Performance of Finfet -- 6. Radio Frequency Stability Performance Of Silicon Nanowire Transistor -- 7. References. 330 $aThis book discusses the evolution of multigate transistors, the design challenges of transistors for high-frequency applications, and the design and modeling of multigate transistors for high-frequency applications. The contents particularly focus on the cut-off frequency and maximum oscillation frequency of different multigate structures. RF stability modeling for multigate transistors is presented, which can help to understand the relation between the small-signal parameter and the physical parameter of the device for optimization. This is a useful reference to those in academia and industry. 410 0$aSpringer Tracts in Electrical and Electronics Engineering,$x2731-4219 606 $aMetal oxide semiconductor field-effect transistors 615 0$aMetal oxide semiconductor field-effect transistors. 676 $a780 700 $aSivasankaran$b K.$f1977-$01378586 702 $aMallick$b Partha Sharathi 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 912 $a996546827903316 996 $aMultigate transistors for high frequency applications$93417288 997 $aUNISA LEADER 01357nas 2200421- 450 001 9910893082803321 005 20151102132928.0 011 $a1935-9667 035 $a(DE-599)ZDB2487970-8 035 $a(OCoLC)83975913 035 $a(CKB)991042728140644 035 $a(CONSER)--2007215084 035 $a(EXLCZ)99991042728140644 100 $a20070216a20039999 s-- a 101 0 $aeng 135 $aurcnu||||| 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 00$aUS-China foreign language 210 1$aLibertyville, IL :$cDavid Publishing Company 300 $aRefereed/Peer-reviewed 311 $a1539-8080 531 $a???? 606 $aLanguage and languages$xStudy and teaching$zChina$vPeriodicals 606 $aLanguage and languages$xStudy and teaching$zUnited States$vPeriodicals 606 $aLanguage and languages$xStudy and teaching$2fast$3(OCoLC)fst00992220 607 $aChina$2fast 607 $aUnited States$2fast 608 $aPeriodicals.$2fast 615 0$aLanguage and languages$xStudy and teaching 615 0$aLanguage and languages$xStudy and teaching 615 7$aLanguage and languages$xStudy and teaching. 676 $a418 906 $aJOURNAL 912 $a9910893082803321 996 $aUS-China foreign language$94246670 997 $aUNINA