LEADER 05546nam 2200685 a 450 001 9910877635203321 005 20200520144314.0 010 $a1-280-72219-3 010 $a9786610722198 010 $a0-470-06140-5 010 $a0-470-06139-1 035 $a(CKB)1000000000356159 035 $a(EBL)281601 035 $a(OCoLC)86068412 035 $a(SSID)ssj0000149121 035 $a(PQKBManifestationID)11163492 035 $a(PQKBTitleCode)TC0000149121 035 $a(PQKBWorkID)10237647 035 $a(PQKB)10234692 035 $a(MiAaPQ)EBC281601 035 $a(EXLCZ)991000000000356159 100 $a20060724d2006 uy 0 101 0 $aeng 135 $aur|n|---||||| 181 $ctxt 182 $cc 183 $acr 200 10$aESD $eRF technology and circuits /$fSteven H. Voldman 210 $aChichester, West Sussex, England ;$aHoboken, NJ $cJ. Wiley$dc2006 215 $a1 online resource (422 p.) 300 $aDescription based upon print version of record. 311 $a0-470-84755-7 320 $aIncludes bibliographical references and index. 327 $aESD; Contents; Preface; Acknowledgements; Chapter 1 RF DESIGN and ESD; 1.1 Fundamental Concepts of ESD Design; 1.2 Fundamental Concepts of RF ESD Design; 1.3 Key RF ESD Contributions; 1.4 Key RF ESD Patents; 1.5 ESD Failure Mechanisms; 1.5.1 RF CMOS ESD Failure Mechanisms; 1.5.2 Silicon Germanium ESD Failure Mechanisms; 1.5.3 Silicon Germanium Carbon ESD Failure Mechanisms in Silicon Germanium Carbon Devices; 1.5.4 Gallium Arsenide Technology ESD Failure Mechanisms; 1.5.5 Indium Gallium Arsenide ESD Failure Mechanisms; 1.5.6 RF Bipolar Circuits ESD Failure Mechanisms; 1.6 RF Basics 327 $a1.7 Two-Port Network Parameters1.7.1 Z-Parameters; 1.7.2 Y-Parameters; 1.7.3. S-Parameters; 1.7.4 T-Parameters; 1.8 Stability: RF Design Stability and ESD; 1.9 Device Degradation and ESD Failure; 1.9.1 ESD-Induced D.C. Parameter Shift and Failure Criteria; 1.9.2 RF Parameters, ESD Degradation, and Failure Criteria; 1.10 RF ESD Testing; 1.10.1 ESD Testing Models; 1.10.2 RF Maximum Power-to-Failure and ESD Pulse Testing Methodology; 1.10.3 ESD-Induced RF Degradation and S-Parameter Evaluation Test Methodology; 1.11 Time Domain Reflectometry (TDR) and Impedance Methodology for ESD Testing 327 $a1.11.1 Time Domain Reflectometry (TDR) ESD Test System Evaluation1.11.2 ESD Degradation System Level Method - Eye Tests; 1.12 Product Level ESD Test and RF Functional Parameter Failure; 1.13 Combined RF and ESD TLP Test Systems; 1.14 Closing Comments and Summary; Problems; References; Chapter 2 RF ESD Design; 2.1 ESD Design Methods: Ideal ESD Networks and RF ESD Design Windows; 2.1.1 Ideal ESD Networks and the Current-Voltage d.c. Design Window; 2.1.2 Ideal ESD Networks in the Frequency Domain Design Window; 2.2 RF ESD Design Methods: Linearity 327 $a2.3 RF ESD Design: Passive Element Quality Factors and Figures of Merit2.4 RF ESD Design Methods: Method of Substitution; 2.4.1 Method of Substitution of Passive Element to ESD Network Element; 2.4.2 Substitution of ESD Network Element to Passive Element; 2.5 RF ESD Design Methods: Matching Networks and RF ESD Networks; 2.5.1 RF ESD Method - Conversion of Matching Networks to ESD Networks; 2.5.2 RF ESD Method: Conversion of ESD Networks into Matching Networks; 2.5.2.1 Conversion of ESD Networks into L-Match Networks; 2.5.2.2 Conversion of ESD Networks into Pie-Match Networks 327 $a2.5.2.3 Conversion of ESD Networks into T-Match Networks2.6 RF ESD Design Methods: Inductive Shunt; 2.7 RF ESD Design Methods: Cancellation Method; 2.7.1 Quality Factors and the Cancellation Method; 2.7.2 Inductive Cancellation of Capacitance Load and Figures of Merit; 2.7.3 Cancellation Method and ESD Circuitry; 2.8 RF ESD Design Methods: Impedance Isolation Technique Using LC Resonator; 2.9 RF ESD Design Methods: Lumped versus Distributed Loads; 2.9.1 RF ESD Distributed Load with Coplanar Wave Guides; 2.9.2 RF ESD Distribution Coplanar Waveguides Analysis Using ABCD Matrices 327 $a2.10 ESD RF Design Synthesis and Floor Planning: RF, Analog, and Digital Integration 330 $aWith the growth of high-speed telecommunications and wireless technology, it is becoming increasingly important for engineers to understand radio frequency (RF) applications and their sensitivity to electrostatic discharge (ESD) phenomena. This enables the development of ESD design methods for RF technology, leading to increased protection against electrical overstress (EOS) and ESD. ESD: RF Technology and Circuits:Presents methods for co-synthesizisng ESD networks for RF applications to achieve improved performance and ESD protection of semiconductor chips;discus 517 3 $aElectrostatic discharge 606 $aRadio frequency integrated circuits$xDesign and construction 606 $aRadio frequency integrated circuits$xProtection 606 $aElectrostatics 606 $aElectric discharges$xPrevention 606 $aStatic eliminators 615 0$aRadio frequency integrated circuits$xDesign and construction. 615 0$aRadio frequency integrated circuits$xProtection. 615 0$aElectrostatics. 615 0$aElectric discharges$xPrevention. 615 0$aStatic eliminators. 676 $a621.384/12 700 $aVoldman$b Steven H$0872423 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910877635203321 996 $aESD$91958013 997 $aUNINA