LEADER 05321nam 2200649Ia 450 001 9910877380403321 005 20200520144314.0 010 $a1-282-27935-1 010 $a9786612279355 010 $a3-527-62843-6 010 $a3-527-62846-0 035 $a(CKB)1000000000790459 035 $a(EBL)482190 035 $a(SSID)ssj0000391845 035 $a(PQKBManifestationID)11283789 035 $a(PQKBTitleCode)TC0000391845 035 $a(PQKBWorkID)10346326 035 $a(PQKB)10635323 035 $a(MiAaPQ)EBC482190 035 $a(OCoLC)441894510 035 $a(PPN)146294505 035 $a(EXLCZ)991000000000790459 100 $a20071029d2008 uy 0 101 0 $aeng 135 $aur|n|---||||| 181 $ctxt 182 $cc 183 $acr 200 10$aHandbook of nitride semiconductors and devices$hVol. 1$iMaterials properties, physics and growth /$fHadis Morkoc 210 $aWeinheim $cWiley-VCH$d2008 215 $a1 online resource (1323 p.) 225 1 $aHandbook of Nitride Semiconductors and Devices (VCH) 300 $aDescription based upon print version of record. 311 $a3-527-40837-1 320 $aIncludes bibliographical references and index. 327 $aHandbook of Nitride Semiconductors and Devices; Contents; Preface; Color Tables; 1 General Properties of Nitrides; Introduction; 1.1 Crystal Structure of Nitrides; 1.2 Gallium Nitride; 1.2.1 Chemical Properties of GaN; 1.2.2 Mechanical Properties of GaN; 1.2.3 Thermal Properties of GaN; 1.3 Aluminum Nitride; 1.3.1 Mechanical Properties of AlN; 1.3.2 Thermal and Chemical Properties of AlN; 1.3.3 Electrical Properties of AlN; 1.3.4 Brief Optical Properties of AlN; 1.4 Indium Nitride; 1.4.1 Crystal Structure of InN; 1.4.2 Mechanical Properties of InN; 1.4.3 Thermal Properties of InN 327 $a1.4.4 Brief Electrical Properties of InN1.4.5 Brief Optical Properties of InN; 1.5 Ternary and Quaternary Alloys; 1.5.1 AlGaN Alloy; 1.5.2 InGaN Alloy; 1.5.3 InAlN Alloy; 1.5.4 InAlGaN Quaternary Alloy; 1.5.5 Dilute GaAs(N); References; 2 Electronic Band Structure and Polarization Effects; Introduction; 2.1 Band Structure Calculations; 2.1.1 Plane Wave Expansion Method; 2.1.2 Orthogonalized Plane Wave (OPW) Method; 2.1.3 Pseudopotential Method; 2.1.4 Augmented Plane Wave (APW) Method; 2.1.5 Other Methods and a Review Pertinent to GaN; 2.2 General Strain Considerations 327 $a2.3 Effect of Strain on the Band Structure of GaN2.4 k·p Theory and the Quasi-Cubic Model; 2.5 Quasi-Cubic Approximation; 2.6 Temperature Dependence of Wurtzite GaN Bandgap; 2.7 Sphalerite (Zinc blende) GaN; 2.8 AlN; 2.8.1 Wurtzite AlN; 2.8.2 Zinc Blende AlN; 2.9 InN; 2.9.1 Wurtzitic InN; 2.9.2 Zinc Blende InN; 2.10 Band Parameters for Dilute Nitrides; 2.10.1 GaAsN; 2.10.2 InAsN; 2.10.3 InPN; 2.10.4 InSbN; 2.10.5 GaPN; 2.10.6 GaInAsN; 2.10.7 GaInPN; 2.10.8 GaAsSbN; 2.11 Confined States; 2.11.1 Conduction Band; 2.11.2 Valence Band; 2.11.3 Exciton Binding Energy in Quantum Wells 327 $a2.12 Polarization Effects2.12.1 Piezoelectric Polarization; 2.12.2 Spontaneous Polarization; 2.12.3 Nonlinearity of Polarization; 2.12.3.1 Origin of the Nonlinearity; 2.12.3.2 Nonlinearities in Spontaneous Polarization; 2.12.3.3 Nonlinearities in Piezoelectric Polarization; 2.12.4 Polarization in Heterostructures; 2.12.4.1 Ga-Polarity Single AlGaN/GaN Interface; 2.12.4.2 Ga-Polarity Single Al(x)In(1-x)N/GaN Interface; 2.12.5 Polarization in Quantum Wells; 2.12.5.1 Nonlinear Polarization in Quantum Wells; 2.12.5.2 InGaN/GaN Quantum Wells 327 $a2.12.6 Effect of Dislocations on Piezoelectric Polarization2.12.7 Thermal Mismatch Induced Strain; References; 3 Growth and Growth Methods for Nitride Semiconductors; Introduction; 3.1 Substrates for Nitride Epitaxy; 3.1.1 Conventional Substrates; 3.1.2 Compliant Substrates; 3.1.3 van der Waals Substrates; 3.2 A Primer on Conventional Substrates and their Preparation for Growth; 3.2.1 GaAs; 3.2.1.1 A Primer on GaAs; 3.2.1.2 Surface Preparation of GaAs for Epitaxy; 3.2.2 Si; 3.2.2.1 A Primer on Si; 3.2.2.2 Surface Preparation of Si for Epitaxy; 3.2.3 SiC; 3.2.3.1 A Primer on SiC 327 $a3.2.3.2 Surface Preparation of SiC for Epitaxy 330 $aThe three volumes of this handbook treat the fundamentals, technology and nanotechnology of nitride semiconductors with an extraordinary clarity and depth. They present all the necessary basics of semiconductor and device physics and engineering together with an extensive reference section. Volume 1 deals with the properties and growth of GaN. The deposition methods considered are: hydride VPE, organometallic CVD, MBE, and liquid/high pressure growth. Additionally, extended defects and their electrical nature, point defects, and doping are reviewed. 410 0$aHandbook of Nitride Semiconductors and Devices (VCH) 606 $aSemiconductors$xMaterials 606 $aNitrides 615 0$aSemiconductors$xMaterials. 615 0$aNitrides. 676 $a621.38152 700 $aMorkoc $b Hadis$0920442 701 $aMorkoc $b Hadis$0920442 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910877380403321 996 $aHandbook of nitride semiconductors and devices$94203212 997 $aUNINA