LEADER 05311nam 2200625Ia 450 001 9910876571603321 005 20200520144314.0 010 $a1-281-76433-7 010 $a9786611764333 010 $a3-527-61725-6 010 $a3-527-61726-4 035 $a(CKB)1000000000377447 035 $a(EBL)481755 035 $a(SSID)ssj0000220249 035 $a(PQKBManifestationID)11218550 035 $a(PQKBTitleCode)TC0000220249 035 $a(PQKBWorkID)10142609 035 $a(PQKB)11035235 035 $a(MiAaPQ)EBC481755 035 $a(OCoLC)212139559 035 $a(EXLCZ)991000000000377447 100 $a19960502d1997 uy 0 101 0 $aeng 135 $aur|n|---||||| 181 $ctxt 182 $cc 183 $acr 200 00$aPerspectives in quantum Hall effects $enovel quantum liquids in low-dimensional semiconductor structures /$fedited by Sankar Das Sarma, Aron Pinczuk 210 $aNew York $cWiley$dc1997 215 $a1 online resource (446 p.) 300 $aDescription based upon print version of record. 311 $a0-471-11216-X 320 $aIncludes bibliographical references and index. 327 $aPERSPECTIVES IN QUANTUM HALL EFFECTS; CONTENTS; Contributors; Preface; 1 Localization, Metal-Insulator Transitions, and Quantum Hall Effect; 1.1. Introduction; 1.1.1. Background; 1.1.2. Overview; 1.1.3. Prospectus; 1.2. Two-Dimensional Localization: Concepts; 1.2.1. Two-Dimensional Scaling Localization; 1.2.2. Strong-Field Situation; 1.2.3. Quantum Hall Effect and Extended States; 1.2.4. Scaling Theory for the Plateau Transition; 1.2.5. Disorder-Tuned Field-Induced Metal-Insulator Transition; 1.3. Strong-Field Localization: Phenomenology; 1.3.1. Plateau Transitions: Integer Effect 327 $a1.3.2. Plateau Transitions: Fractional Effect1.3.3. Spin Effects; 1.3.4. Frequency-Domain Experiments; 1.3.5. Magnetic-Field-Induced Metal-Insulator Transitions; 1.4. Related Topics; 1.4.1. Universality; 1.4.2. Random Flux Localization; References; 2 Experimental Studies of Multicomponent Quantum Hall Systems; 2.1. Introduction; 2.2. Spin and the FQHE; 2.2.1. Tilted Field Technique; 2.2.2. Phase Transition at v = 8/5; 2.2.3. The v = 5/2 Enigma; 2.3. FQHE in Double-Layer 2D Systems; 2.3.1. Double-Layer Samples; 2.3.2. The v = 1/2 FQHE; 2.3.3. Collapse of the Odd Integers 327 $a2.3.4. Many-Body v = 1 State2.4. Summary; References; 3 Properties of the Electron Solid; 3.1. Introduction; 3.1.1. Realizations of the Wigner Crystal; 3.1.2. Wigner Crystal in a Magnetic Field; 3.2. Some Intriguing Experiments; 3.2.1. Early Experiments: Fractional Quantum Hall Effects; 3.2.2. Insulating State at Low Filling Factors: A Wigner Crystal?; 3.2.3. Photoluminescence Experiments; 3.3. Disorder Effects on the Electron Solid: Classical Studies; 3.3.1. Defects and the State of the Solid; 3.3.2. Molecular Dynamics Simulations; 3.3.3. Continuum Elasticity Theory Analysis 327 $a3.3.4. Effect of Finite Temperatures3.4. Quantum Effects on Interstitial Electrons; 3.4.1. Correlation Effects on Interstitials: A Trial Wavefunction; 3.4.2. Interstitials and the Hall Effect; 3.5. Photoluminescence as a Probe of the Wigner Crystal; 3.5.1. Formalism; 3.5.2. Mean-Field Theory; 3.5.3. Beyond Mean-Field Theory: Shakeup Effects; 3.5.4. Hofstadter Spectrum: Can It Be Seen?; 3.6. Conclusion: Some Open Questions; References; 4 Edge-State Transport; 4.1 Introduction; 4.2. Edge States; 4.2.1. IQHE; 4.2.2. FQHE; 4.3. Randomness and Hierarchical Edge States; 4.3.1. The v = 2 Random Edge 327 $a4.3.2. Fractional Quantum Hall Random Edge4.3.3. Finite-Temperature Effects; 4.4. Tunneling as a Probe of Edge-State Structure; 4.4.1. Tunneling at a Point Contact; 4.4.2. Resonant Tunneling; 4.4.3. Generalization to Hierarchical States; 4.4.4. Shot Noise; 4.5. Summary; Appendix: Renormalization Group Analysis; References; 5 Multicomponent Quantum Hall Systems: The Sum of Their Parts and More; 5.1. Introduction; 5.2 Multicomponent Wavefunctions; 5.3. Chern-Simons Effective Field Theory; 5.4. Fractional Charges in Double-Layer Systems; 5.5. Collective Modes in Double-Layer Quantum Hall Systems 327 $a5.6. Broken Symmetries 330 $aThe discovery of the quantized and fractional Quantum Hall Effect phenomena is among the most important physics findings in the latter half of this century. The precise quantization of the electrical resistance involved in the quantized Hall effect phenomena has led to the new definition of the resistance standard and has metrologically affected all of science and technology. This resource consists of contributions from the top researchers in the field who present recent experimental and theoretical developments. Each chapter is self-contained and includes its own set of references guiding rea 606 $aQuantum Hall effect 606 $aHall effect devices 615 0$aQuantum Hall effect. 615 0$aHall effect devices. 676 $a537.6226 676 $a539.721 701 $aSarma$b Sankar Das$f1953-$01758469 701 $aPinczuk$b Aron$01758470 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910876571603321 996 $aPerspectives in quantum Hall effects$94196681 997 $aUNINA