LEADER 01626oam 2200505zu 450 001 9910782232603321 005 20210721054655.0 010 $a1-282-16210-1 010 $a9786612162107 010 $a90-272-9767-3 035 $a(CKB)1000000000551112 035 $a(SSID)ssj0000284782 035 $a(PQKBManifestationID)11222608 035 $a(PQKBTitleCode)TC0000284782 035 $a(PQKBWorkID)10262632 035 $a(PQKB)10972492 035 $a(MiAaPQ)EBC623208 035 $a(EXLCZ)991000000000551112 100 $a20160829d2001 uy 101 0 $aeng 181 $ctxt 182 $cc 183 $acr 200 00$aText Representation: Linguistic and Psycholinguistic Aspects 210 31$a[Place of publication not identified]$cJohn Benjamins Publishing Company$d2001 225 0 $aHuman cognitive processing Text representation 300 $aBibliographic Level Mode of Issuance: Monograph 311 $a1-58811-077-X 311 $a90-272-2360-2 606 $aDiscourse analysis$xPsychological aspects$vCongresses 606 $aPhilology & Linguistics$2HILCC 606 $aLanguages & Literatures$2HILCC 615 0$aDiscourse analysis$xPsychological aspects 615 7$aPhilology & Linguistics 615 7$aLanguages & Literatures 676 $a401/.41 700 $aSanders$b Ted J.M$01467430 702 $aSanders$b Ted 702 $aSchilperoord$b Joost 702 $aSpooren$b Wilbert 801 0$bPQKB 906 $aBOOK 912 $a9910782232603321 996 $aText Representation: Linguistic and Psycholinguistic Aspects$93678080 997 $aUNINA LEADER 02241oam 2200445zu 450 001 9910872899403321 005 20241212214904.0 024 7 $a10.1109/HTEMDS.1998 035 $a(CKB)111026746721706 035 $a(SSID)ssj0000395119 035 $a(PQKBManifestationID)12104822 035 $a(PQKBTitleCode)TC0000395119 035 $a(PQKBWorkID)10453247 035 $a(PQKB)11147728 035 $a(NjHacI)99111026746721706 035 $a(EXLCZ)99111026746721706 100 $a20160829d1998 uy 101 0 $aeng 135 $aur||||||||||| 181 $ctxt 182 $cc 183 $acr 200 10$a1998 Conference on High-Temperature Electronic Materials, Devices and Sensors Proceedings 210 31$a[Place of publication not identified]$cIEEE$d1998 215 $a1 online resource (500 pages) 300 $aBibliographic Level Mode of Issuance: Monograph 311 08$a9780780344372 311 08$a0780344375 330 $aThis paper presents the high temperature behaviour of RF LDMOSFETs used in wireless applications. Self heating is an important issue in RF power transistors. Self heating could cause thermal runaway in the device if the package has not been optimally designed to dissipate the heat generated in the device. Temperature rise due to self heating is of greater concern in SOI devices because of the presence of the buried oxide layer which has lesser thermal conductivity than bulk Si. In this work, 2D finite element electrothermal simulators were used to investigate the extent of self heating. Thermal models were solved in the MIXEDMODE circuit/device simulator with the package parasitics included, to study the temperature rise in the device due to self heating. 606 $aDetectors$vCongresses 606 $aElectronic apparatus and appliances$xThermal properties$vCongresses 615 0$aDetectors 615 0$aElectronic apparatus and appliances$xThermal properties 676 $a681.2 712 02$aInstitute of Electrical and Electronics Engineers, Inc. Staff 801 0$bPQKB 906 $aPROCEEDING 912 $a9910872899403321 996 $a1998 Conference on High-Temperature Electronic Materials, Devices and Sensors Proceedings$92509152 997 $aUNINA