LEADER 01978oam 2200421zu 450 001 9910872857603321 005 20241212214916.0 024 7 $a10.1109/ICIPRM.1998 035 $a(CKB)111026746720564 035 $a(SSID)ssj0000455012 035 $a(PQKBManifestationID)12210544 035 $a(PQKBTitleCode)TC0000455012 035 $a(PQKBWorkID)10398804 035 $a(PQKB)11774357 035 $a(NjHacI)99111026746720564 035 $a(EXLCZ)99111026746720564 100 $a20160829d1998 uy 101 0 $aeng 135 $aur||||||||||| 181 $ctxt 182 $cc 183 $acr 200 10$a1998 International Conference on Indium Phosphide and Related Materials 210 31$a[Place of publication not identified]$cIEEE$d1998 215 $a1 online resource (800 pages) 300 $aBibliographic Level Mode of Issuance: Monograph 311 08$a9780780342200 311 08$a0780342208 330 $aThe papers included in this leading international conference examine test structures for microelectronic devices, their recent progress and future directions. Included is a detailed treatment of current developments in microelectronic test structure research, implementation, and applications. Also addressed are advances in device characterization, such as increased miniaturization, reduced operating voltages and reduced power requirements through improved measurement and test techniques. Topics highlighted include: Process Characterization, Dimensional Measurements, Interconnection, Material Characterization, Reliability, Device Characterization, and Statistics. 606 $aIndium phosphide$vCongresses 615 0$aIndium phosphide 676 $a621.38152 712 02$aIEEE, Institute of Electrical and Electronics Engineers, Inc. Staff 801 0$bPQKB 906 $aPROCEEDING 912 $a9910872857603321 996 $a1998 International Conference on Indium Phosphide and Related Materials$92506463 997 $aUNINA