LEADER 02366oam 2200433zu 450 001 9910872434503321 005 20241212215018.0 035 $a(CKB)111026746743032 035 $a(SSID)ssj0000558513 035 $a(PQKBManifestationID)12289820 035 $a(PQKBTitleCode)TC0000558513 035 $a(PQKBWorkID)10565396 035 $a(PQKB)11243625 035 $a(NjHacI)99111026746743032 035 $a(EXLCZ)99111026746743032 100 $a20160829d1996 uy 101 0 $aeng 135 $aur||||||||||| 181 $ctxt 182 $cc 183 $acr 200 10$aMemory Technology, Design and Testing, 1996: IEEE International Workshop On 210 31$a[Place of publication not identified]$cIEEE Computer Society Press$d1996 215 $a1 online resource 300 $aBibliographic Level Mode of Issuance: Monograph 311 08$a9780818674662 311 08$a0818674660 327 $aMemory Technology, Design and Testing -- Future trends in flash memories -- Recent developments in dram testing -- Built in self testing for detection of coupling faults in semiconductor memories -- A built in self test scheme for 256Meg sdram -- Proposed on-chip test structure to quantify trap densities within flash meories -- A concurrent placement and routing strategy for improving the quality of application specific memory designs -- Flash memory quality and reliability issues -- A low power current sensing scheme for cmos sram. 330 $aThe keynote speech on future trends in flash memories is followed by 16 additional review and research papers. Among the topics are built-in self-testing for detecting of coupling faults in semiconductor memories, a low-power current sensing scheme for CMOS SRAM, scanning capacitance microscopy analysis of DRAM trench capacitors, the thermal monitoring of memories, and a true testprocessor-per-pin algorithmic pattern generator. No subject index. Annotation copyrighted by Book News, Inc., Portland, OR. 606 $aRandom access memory 606 $aSemiconductor storage devices$xTesting 615 0$aRandom access memory. 615 0$aSemiconductor storage devices$xTesting. 676 $a004.5 801 0$bPQKB 906 $aBOOK 912 $a9910872434503321 996 $aMemory Technology, Design and Testing, 1996: IEEE International Workshop On$92338176 997 $aUNINA