LEADER 02655nam 2200505 a 450 001 9910698558403321 005 20230422040116.0 010 $a0-585-09871-9 035 $a(CKB)111000211325606 035 $a(SSID)ssj0000153814 035 $a(PQKBManifestationID)12004350 035 $a(PQKBTitleCode)TC0000153814 035 $a(PQKBWorkID)10406375 035 $a(PQKB)11487087 035 $a(MiAaPQ)EBC2001088 035 $a(OCoLC)237202520 035 $a(EXLCZ)99111000211325606 100 $a19980526d1999 uy 0 101 0 $aeng 135 $aurcn||||||||| 181 $ctxt 182 $cc 183 $acr 200 14$aThe FBI$b[electronic resource] $ea comprehensive reference guide /$f[written and] edited by Athan G. Theoharis with Tony G. Poveda, Susan Rosenfeld, Richard Gid Powers 210 $aPhoenix, Ariz. $cOryx Press$d1999 210 1$a[Washington, D.C.] :$cU.S. Dept. of Justice, Federal Bureau of Investigation,$d[2008] 215 $axi, 409 p. $cill 300 $aBibliographic Level Mode of Issuance: Monograph 311 $a0-89774-991-X 320 $aIncludes bibliographical references (p. 385-396) and index. 330 1 $a"Since its inception in the early 20th century the Federal Bureau of Investigation has emerged as a dominant agency in the American judicial system. Within its 10 chapters, this source provides a comprehensive chronological history of and guide to the FBI that includes information about the facilities, the organizational structure, and biographies of key individuals. This reference source will not only please FBI enthusiasts, but it also serves as an excellent resource for those interested in U.S. history, criminal justices, and American culture. Also included is an extensive chronology of key events, a subject index, and an authoritative bibliography. Numerous photographs throughout the book illustrate the essays, along with graphs and tables. An excellent reference source for all libraries".--"Outstanding Reference Sources : the 1999 Selection of New Titles", American Libraries, May 1999. Comp. by the Reference Sources Committee, RUSA, ALA. 606 $aCriminal investigation$zUnited States$xHistory 606 $aInternal security$zUnited States$xHistory 615 0$aCriminal investigation$xHistory. 615 0$aInternal security$xHistory. 676 $a363.25/0973 700 $aTheoharis$b Athan G$0484334 712 02$aUnited States.$bFederal Bureau of Investigation. 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910698558403321 996 $aThe FBI$93103058 997 $aUNINA LEADER 07646nam 22006735 450 001 9910865238403321 005 20240720053829.0 010 $a9789819715718 010 $a9819715717 024 7 $a10.1007/978-981-97-1571-8 035 $a(MiAaPQ)EBC31359054 035 $a(Au-PeEL)EBL31359054 035 $a(CKB)32200400300041 035 $a(DE-He213)978-981-97-1571-8 035 $a(OCoLC)1439050658 035 $a(EXLCZ)9932200400300041 100 $a20240530d2024 u| 0 101 0 $aeng 135 $aurcnu|||||||| 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 14$aThe Physics of Semiconductor Devices $eProceedings of IWPSD 2021 /$fedited by Rajendra Singh, Madhusudan Singh, Ashok Kapoor 205 $a1st ed. 2024. 210 1$aSingapore :$cSpringer Nature Singapore :$cImprint: Springer,$d2024. 215 $a1 online resource (406 pages) 225 1 $aSpringer Proceedings in Physics,$x1867-4941 ;$v306 311 08$a9789819715701 311 08$a9819715709 327 $aImpact of Various Device Parameters on the Series Resistance of Perovskite Solar Cell -- Performance Investigation of Alkali Metal Fluorides as Alternate Electron Selective Contacts for TOPCon Solar Cells -- Computational Analysis of Antireflection Coatings for Semiconductor Solar Cells -- Effect of O2 Partial Pressure on Valence Band Maxima of HfO2 Thin Film -- Dependence of analog performance and linearity with channel doping concentration for an InGaAs MOSFET -- Effect of Channel Epilayer Thickness on Low Power Analog Operation of Asymmetric U-Shaped pTFET -- Effect of Helium gas addition to SF6/O2 chemistry for SiC dry etching in AlGaN/GaN/SiC HEMTs -- Modeling of High and Low Resistant States inSingle Defect Atomristors -- Design of Vertical Superjunction AlGaN/GaN HEMT: A TCAD-based Approach -- Effect on photo-absorbance and optical energy-gap of Al2O3 thin film after deposition of Ag thin film -- Thermometry across switching oxide layer in ReRAM device -- Effective Mobility Extraction of GaN-HEMTusing S-parameter -- Stress Dependent Electrical Characteristics of Flexible a-IGZO TFTs -- Modeling of Negative Capacitance Field effect transistors based on different ferroelectric materials -- Comparative Investigation of Single and Double Channel AlGaN/GaN HEMTs for LNAs -- ZnO nanorods orientation control with seedless hydrothermal growth and finding suitable morphology with simulation for tactile sensors -- A Comparative Demonstration of a 2D MXene-based Asymmetric Memristor Using Pristine and Nanohybrid Ti3C2Tx -- Modelling and simulation of a thin-film bulk acoustic resonator (FBAR) based gas sensor -- Design and Simulation of an open EWOD based Digital Microfluidic Device for Droplet Actuation using COMSOL -- A Capacitive Transducer for film Thickness Measurement -- Performance Projection of Stacked Silicon Nanosheet-FET Architectures for Future Technology Node -- Determination of Coupling Coefficient in Large Optical Cavity Distributed Feedback Laser structure with metal surfacegrating -- Design and Simulation of Stepped Microcantilevers for Energy Harvesting Applications -- Lowering Motional Impedance in Micromachined Frequency-Synthesizer Using Ultra-thin (SiO2 ~30 nm) Internal Dielectric -- Thermally Synthesized Cu/CuO/Cu(sheet) with Bipolar Resistive Switching -- Dynamic tuning of ENZ region of ITO and sensing using a tapered optical fiber -- Identifying the Recombination Zone in Perovskite Solar Cells -- High speed etching of silicon in NaOH-based solution using Surface to Volume Ratio (SVR) -- Parylene membrane transfer on PDMS microchannel for microvalve fabrication -- RF Analysis of Tapered Angle Hetero-junction Dopingless TFET for low power applications -- Impact of pocket doped Mg2Si/Si hetrojunction Ge gated TFET for low optical power detection at 1550 nm -- MEMS acoustic sensor for low frequency applications -- Aptamer functionalized CVD grown monolayer WS2 based FETs for real-time detection of E. coli -- Superconducting stub tuner impedance matching circuitfor high-frequency measurements of nanoscale devices -- Spice Simulation of Solution Processed Bottom Gate Bottom Contact Organic Thin Film Transistor -- Inducing Phase transitions in MoS2 by Ionic liquid gating -- Ultrasensitive reduced vanadium dioxidebased MEMS Pirani gauge with extended dynamic range -- Lower Drying Temperature Process for Hole Transport Layer PEDOT: PSS in PCDTBT: PCBM Devices -- Electrical Performance of Protein-based Flexible MIM Structure Fabricated at Room Temperature for Proteotronic Applications -- Estimation of asymmetrically distributed anti-phase domains ratio in GaAs/Si(100) epitaxial layers using high resolution X-ray diffraction -- A Vertical GaN Split Gate Trench MOSFET Device with Reduced Switching Energy Losses -- Optimization of Negative Differential Conductance (NDC) Point for Multi Gate Devices Considering Self Heating Effects using Surface to Volume Ratio (SVR) -- Performance of Strained-SiGe in FinFETs and Stacked Nanosheet FETs for Sub-7nm TechnologyNode -- Thermal Admittance Spectroscopy of AlGaN/GaN HEMT Structure -- Numerical Modelling of WO3-based Memristive System for Neuromorphic Computation -- Flexible Organic Field-Effect Transistor using Natural Protein as a Gate Dielectric for Green Electronics -- Design and Analysis of Cs3Sb2Br9/Si Tandem Solar Cell using SCAPS-1D -- One-pot preparation of Fe/Cu catalytic solution for the growth of carbon nanotubes for use in gas sensor and field emission devices. 330 $aThis book includes proceedings of the 21st International Workshop on Physics of Semiconductor Devices. The workshop is jointly organized by the Indian Institute of Technology, Delhi, and Solid State Physics Laboratory, Delhi, in collaboration with the Society for Semiconductor Devices and Semiconductor Society of India. This book disseminates the current knowledge of semiconductor physics and its applications across the scientific community. It is based on a biennial workshop that provides the participating research groups with a stimulating platform for interaction and collaboration with colleagues from the same scientific community. The book discusses the latest developments in III-nitrides; materials and devices, compound semiconductors, VLSI technology, optoelectronics, sensors, photovoltaics, crystal growth, epitaxy, and characterization, graphene, and other 2D materials and organic semiconductors. The research articles included in this book are contributed by various eminent scientists from all over the world. The book serves as a reference resource for researchers and practitioners in academia and industry. 410 0$aSpringer Proceedings in Physics,$x1867-4941 ;$v306 606 $aSemiconductors 606 $aOptical materials 606 $aNanoscience 606 $aCondensed matter 606 $aSemiconductors 606 $aOptical Materials 606 $aNanophysics 606 $aCondensed Matter Physics 615 0$aSemiconductors. 615 0$aOptical materials. 615 0$aNanoscience. 615 0$aCondensed matter. 615 14$aSemiconductors. 615 24$aOptical Materials. 615 24$aNanophysics. 615 24$aCondensed Matter Physics. 676 $a537,622 700 $aSingh$b Rajendra$0164720 701 $aSingh$b Madhusudan$0867057 701 $aKapoor$b Ashok$0294940 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910865238403321 996 $aThe Physics of Semiconductor Devices$94169388 997 $aUNINA