LEADER 03769uam  2200553 a 450 
001 9910841396403321
005 20220629192810.0
010   $a1-119-35502-8
010   $a1-119-35500-1
035   $a(CKB)4100000007591520
035   $a(MiAaPQ)EBC5660371
035   $a(CaSebORM)9781119355014
035   $a(BIP)056231178
035   $a(EXLCZ)994100000007591520
100   $a20090819d2019      uy 
101 0 $aeng
135   $aurcn####|||||
181   $ctxt$2rdacontent
182   $cc$2rdamedia
183   $acr$2rdacarrier
200 10$aMolecular Beam Epitaxy$b[electronic resource] $eMaterials and Applications for Electronics and Optoelectronics /$fAsahi, Hajime
205   $a1st edition
210  1$cWiley,$d2019.
215   $a1 online resource
311   $a1-119-35501-X 
330   $aCovers both the fundamentals and the state-of-the-art technology used for MBE Written by expert researchers working on the frontlines of the field, this book covers fundamentals of Molecular Beam Epitaxy (MBE) technology and science, as well as state-of-the-art MBE technology for electronic and optoelectronic device applications. MBE applications to magnetic semiconductor materials are also included for future magnetic and spintronic device applications. Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics is presented in five parts: Fundamentals of MBE; MBE technology for electronic devices application; MBE for optoelectronic devices; Magnetic semiconductors and spintronics devices; and Challenge of MBE to new materials and new researches. The book offers chapters covering the history of MBE; principles of MBE and fundamental mechanism of MBE growth; migration enhanced epitaxy and its application; quantum dot formation and selective area growth by MBE; MBE of III-nitride semiconductors for electronic devices; MBE for Tunnel-FETs; applications of III-V semiconductor quantum dots in optoelectronic devices; MBE of III-V and III-nitride heterostructures for optoelectronic devices with emission wavelengths from THz to ultraviolet; MBE of III-V semiconductors for mid-infrared photodetectors and solar cells; dilute magnetic semiconductor materials and ferromagnet/semiconductor heterostructures and their application to spintronic devices; applications of bismuth-containing III?V semiconductors in devices; MBE growth and device applications of Ga2O3; Heterovalent semiconductor structures and their device applications; and more. Includes chapters on the fundamentals of MBE Covers new challenging researches in MBE and new technologies Edited by two pioneers in the field of MBE with contributions from well-known MBE authors including three Al Cho MBE Award winners Part of the Materials for Electronic and Optoelectronic Applications series Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics will appeal to graduate students, researchers in academia and industry, and others interested in the area of epitaxial growth.
606   $aMolecular beam epitaxy
606   $aEpitaxy
606   $aCrystal growth
606   $aElectronics$xMaterials
606   $aOptoelectronics$xMaterials
610   $aEpitaxy
610   $aCrystal Growth
610   $aElectronics
610   $aOptoelectronics
610   $aScience
610   $aTechnology & Engineering
615  0$aMolecular beam epitaxy.
615  0$aEpitaxy.
615  0$aCrystal growth.
615  0$aElectronics$xMaterials.
615  0$aOptoelectronics$xMaterials.
676   $a621.3815/2
700   $aAsahi$b Hajime$01730263
702   $aHorikoshi$b Yoshiji
906   $aBOOK
912   $a9910841396403321
996   $aMolecular Beam Epitaxy$94141125
997   $aUNINA