LEADER 05232nam 2200637Ia 450 001 9910840846603321 005 20170809170251.0 010 $a1-282-69157-0 010 $a9786612691577 010 $a3-527-62394-9 010 $a3-527-62395-7 035 $a(CKB)1000000000707833 035 $a(EBL)481742 035 $a(OCoLC)316803129 035 $a(SSID)ssj0000276315 035 $a(PQKBManifestationID)11192627 035 $a(PQKBTitleCode)TC0000276315 035 $a(PQKBWorkID)10223806 035 $a(PQKB)11337974 035 $a(MiAaPQ)EBC481742 035 $a(PPN)243245785 035 $a(EXLCZ)991000000000707833 100 $a20080923d2009 uy 0 101 0 $aeng 135 $aur|n|---||||| 181 $ctxt 182 $cc 183 $acr 200 10$aZinc oxide$b[electronic resource] $efundamentals, materials and device technology /$fHadis Morko ?and U?mit O?zgu?r 210 $aWeinheim $cWiley-VCH$dc2009 215 $a1 online resource (491 p.) 300 $aDescription based upon print version of record. 311 $a3-527-40813-4 320 $aIncludes bibliographical references and index. 327 $aZinc Oxide: Fundamentals, Materials and Device Technology; Contents; Preface; 1 General Properties of ZnO; 1.1 Crystal Structure; 1.2 Lattice Parameters; 1.3 Electronic Band Structure; 1.4 Mechanical Properties; 1.5 Vibrational Properties; 1.6 Thermal Properties; 1.6.1 Thermal Expansion Coefficients; 1.6.2 Thermal Conductivity; 1.6.3 Specific Heat; 1.6.4 Pyroelectricity; 1.7 Electrical Properties of Undoped ZnO; 1.7.1 Low-Field Transport; 1.7.2 High-Field Transport; References; 2 ZnO Growth; 2.1 Bulk Growth; 2.2 Substrates; 2.2.1 Sapphire Substrates for ZnO Epitaxy 327 $a2.2.2 Other Substrates for ZnO Epitaxy (ScAlMgO4, CaF2, LiTaO3, LiNbO3)2.2.3 ZnO Homoepitaxy; 2.3 Epitaxial Growth Techniques; 2.3.1 RF Magnetron Sputtering; 2.3.2 Molecular Beam Epitaxy; 2.3.2.1 Growth on c-Plane Sapphire; 2.3.2.2 Growth on a-Plane Sapphire; 2.3.2.3 Growth on GaN Templates; 2.3.2.4 Growth on ZnO Substrates; 2.3.3 Pulsed Laser Deposition; 2.3.4 Chemical Vapor Deposition; References; 3 Optical Properties; 3.1 Optical Processes in Semiconductors; 3.1.1 Fundamentals of the Absorption and Emission Processes; 3.1.2 Optical Absorption and Emission in Semiconductors 327 $a3.1.3 Band-to-Band Transitions3.1.4 Excitonic Transitions; 3.2 Optical Transitions in ZnO; 3.2.1 Free Excitons and Polaritons; 3.2.2 Bound Excitons; 3.2.3 Two-Electron Satellites in PL; 3.2.4 DAP and Shallow Acceptor-Bound Exciton Transitions and LO-Phonon Replicas in PL; 3.2.5 Temperature-Dependent PL Measurements; 3.3 Defects in ZnO; 3.3.1 Predictions from First Principles; 3.3.2 Defect-Related Optical Transitions in ZnO; 3.3.2.1 Green Luminescence Band; 3.3.2.2 Yellow Luminescence Band; 3.3.2.3 Red Luminescence Band; 3.4 Refractive Index of ZnO and MgZnO; 3.5 Stimulated Emission in ZnO 327 $a3.5.1 Polycrystalline ZnO Films and''Random Lasers''3.5.2 Multiple Quantum Wells; 3.6 Recombination Dynamics in ZnO; 3.7 Nonlinear Optical Properties; 3.7.1 Second-Order Nonlinear Optical Properties; 3.7.1.1 Second-Harmonic Generation; 3.7.2 Third-Order Nonlinear Optical Properties; 3.7.2.1 Third Harmonic Generation; 3.7.3 Intensity Dependent Refractive Index; 3.7.4 Two-Photon Absorption; References; 4 Doping of ZnO; 4.1 n-Type Doping; 4.2 p-Type Doping; 4.2.1 Nitrogen Doping; 4.2.2 Codoping Method; 4.2.3 Other Dopants in Group V; 4.2.4 Concluding Remarks on Reliability of p-Type ZnO 327 $aReferences5 ZnO-Based Dilute Magnetic Semiconductors; 5.1 Doping with Transition Metals; 5.2 General Remarks About Dilute Magnetic Semiconductors; 5.3 Classification of Magnetic Materials; 5.4 A Brief Theory of Magnetization; 5.5 Dilute Magnetic Semiconductor Theoretical Aspects; 5.6 Measurements Techniques for Identification of Ferromagnetism; 5.7 Magnetic Interactions in DMS; 5.7.1 Carrier-Single Magnetic Ion Interaction; 5.7.2 Interaction Between Magnetic Ions; 5.7.2.1 Superexchange Mechanism; 5.7.2.2 Blombergen-Rowland Mechanism; 5.7.2.3 Double Exchange Interaction 327 $a5.7.2.4 Ruderman-Kittel-Kasuya-Yoshida Mechanism 330 $aThis first systematic, authoritative and thorough treatment in one comprehensive volume presents the fundamentals and technologies of the topic, elucidating all aspects of ZnO materials and devices. Following an introduction, the authors look at the general properties of ZnO, as well as its growth, optical processes, doping and ZnO-based dilute magnetic semiconductors. Concluding sections treat bandgap engineering, processing and ZnO nanostructures and nanodevices.Of interest to device engineers, physicists, and semiconductor and solid state scientists in general. 606 $aZinc oxide 606 $aZinc compounds 615 0$aZinc oxide. 615 0$aZinc compounds. 676 $a546.6612 676 $a621.38152 700 $aMorko$b? Hadis$01731684 701 $aO?zgu?r$b U?mit$f1973-$01731685 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910840846603321 996 $aZinc oxide$94144718 997 $aUNINA