LEADER 05468nam 22006134a 450 001 9910830878003321 005 20230829000843.0 010 $a1-280-64993-3 010 $a9786610649938 010 $a0-470-85546-0 010 $a0-470-85545-2 035 $a(CKB)1000000000356097 035 $a(EBL)274326 035 $a(OCoLC)476018669 035 $a(SSID)ssj0000120117 035 $a(PQKBManifestationID)11146443 035 $a(PQKBTitleCode)TC0000120117 035 $a(PQKBWorkID)10080909 035 $a(PQKB)11446384 035 $a(MiAaPQ)EBC274326 035 $a(EXLCZ)991000000000356097 100 $a20060215d2006 uy 0 101 0 $aeng 135 $aur|n|---||||| 181 $ctxt 182 $cc 183 $acr 200 10$aCharge-based MOS transistor modeling$b[electronic resource] $ethe EKV model for low-power and RF IC design /$fChristian C. Enz, Eric A. Vittoz 210 $aChichester, England ;$aHoboken, NJ $cJohn Wiley$dc2006 215 $a1 online resource (329 p.) 300 $aDescription based upon print version of record. 311 $a0-470-85541-X 320 $aIncludes bibliographical references (p. [291]-298) and index. 327 $aCharge-based MOS Transistor Modeling; Contents; Foreword; Preface; List of Symbols; 1 Introduction; 1.1 The Importance of Device Modeling for IC Design; 1.2 A Short History of the EKV MOS Transistor Model; 1.3 The Book Structure; Part I The Basic Long-Channel Intrinsic Charge-Based Model; 2 Definitions; 2.1 The N-channel Transistor Structure; 2.2 Definition of Charges, Current, Potential, and Electric Fields; 2.3 Transistor Symbol and P-Channel Transistor; 3 The Basic Charge Model; 3.1 Poisson's Equation and Gradual Channel Approximation; 3.2 Surface Potential as a Function of Gate Voltage 327 $a3.3 Gate Capacitance3.4 Charge Sheet Approximation; 3.5 Density of Mobile Inverted Charge; 3.5.1 Mobile Charge as a Function of Gate Voltage and Surface Potential; 3.5.2 Mobile Charge as a Function of Channel Voltage and Surface Potential; 3.6 Charge-Potential Linearization; 3.6.1 Linearization of Qi (s); 3.6.2 Linearized Bulk Depletion Charge Qb; 3.6.3 Strong Inversion Approximation; 3.6.4 Evaluation of the Slope Factor; 3.6.5 Compact Model Parameters; 4 Static Drain Current; 4.1 Drain Current Expression; 4.2 Forward and Reverse Current Components; 4.3 Modes of Operation 327 $a4.4 Model of Drain Current Based on Charge Linearization4.4.1 Expression Valid for All Levels of Inversion; 4.4.2 Compact Model Parameters; 4.4.3 Inversion Coefficient; 4.4.4 Approximation of the Drain Current in Strong Inversion; 4.4.5 Approximation of the Drain Current in Weak Inversion; 4.4.6 Alternative Continuous Models; 4.5 Fundamental Property: Validity and Application; 4.5.1 Generalization of Drain Current Expression; 4.5.2 Domain of Validity; 4.5.3 Causes of Degradation; 4.5.4 Concept of Pseudo-Resistor; 4.6 Channel Length Modulation; 4.6.1 Effective Channel Length 327 $a4.6.2 Weak Inversion4.6.3 Strong Inversion; 4.6.4 Geometrical Effects; 5 The Small-Signal Model; 5.1 The Static Small-Signal Model; 5.1.1 Transconductances; 5.1.2 Residual Output Conductance in Saturation; 5.1.3 Equivalent Circuit; 5.1.4 The Normalized Transconductance to Drain Current Ratio; 5.2 A General NQS Small-Signal Model; 5.3 The QS Dynamic Small-Signal Model; 5.3.1 Intrinsic Capacitances; 5.3.2 Transcapacitances; 5.3.3 Complete QS Circuit; 5.3.4 Domains of Validity of the Different Models; 6 The Noise Model; 6.1 Noise Calculation Methods; 6.1.1 General Expression 327 $a6.1.2 Long-Channel Simplification6.2 Low-Frequency Channel Thermal Noise; 6.2.1 Drain Current Thermal Noise PSD; 6.2.2 Thermal Noise Excess Factor Definitions; 6.2.3 Circuit Examples; 6.3 Flicker Noise; 6.3.1 Carrier Number Fluctuations (Mc Worther Model); 6.3.2 Mobility Fluctuations (Hooge Model); 6.3.3 Additional Contributions Due to the Source and Drain Access Resistances; 6.3.4 Total 1/f Noise at the Drain; 6.3.5 Scaling Properties; 6.4 Appendices; Appendix: The Nyquist and Bode Theorems; Appendix: General Noise Expression; 7 Temperature Effects and Matching; 7.1 Introduction 327 $a7.2 Temperature Effects 330 $aModern, large-scale analog integrated circuits (ICs) are essentially composed of metal-oxide semiconductor (MOS) transistors and their interconnections. As technology scales down to deep sub-micron dimensions and supply voltage decreases to reduce power consumption, these complex analog circuits are even more dependent on the exact behavior of each transistor. High-performance analog circuit design requires a very detailed model of the transistor, describing accurately its static and dynamic behaviors, its noise and matching limitations and its temperature variations. The charge-based EKV (Enz 606 $aMetal oxide semiconductors$xMathematical models 606 $aMetal oxide semiconductor field-effect transistors$xMathematical models 615 0$aMetal oxide semiconductors$xMathematical models. 615 0$aMetal oxide semiconductor field-effect transistors$xMathematical models. 676 $a621.3815284 700 $aEnz$b Christian$01339617 701 $aVittoz$b Eric A.$f1938-$0725311 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910830878003321 996 $aCharge-based MOS transistor modeling$94063873 997 $aUNINA LEADER 05169oam 2200709I 450 001 9910964274203321 005 20250709123434.0 010 $a1-136-32142-X 010 $a0-203-04481-9 010 $a1-299-28865-0 010 $a1-136-32135-7 024 7 $a10.4324/9780203044810 035 $a(CKB)2560000000099927 035 $a(EBL)1144708 035 $a(OCoLC)831119208 035 $a(SSID)ssj0000910461 035 $a(PQKBManifestationID)12385160 035 $a(PQKBTitleCode)TC0000910461 035 $a(PQKBWorkID)10941338 035 $a(PQKB)10418581 035 $a(MiAaPQ)EBC1144708 035 $a(Au-PeEL)EBL1144708 035 $a(CaPaEBR)ebr11165338 035 $a(CaONFJC)MIL460115 035 $a(OCoLC)830323449 035 $a(OCoLC)1148109106 035 $a(FINmELB)ELB135507 035 $a(EXLCZ)992560000000099927 100 $a20180331d2000 uy 0 101 0 $aeng 135 $aur|n|---||||| 181 $ctxt 182 $cc 183 $acr 200 10$aNapoleon and the World War of 1813 $elessons in coalition warfighting /$fJ.P. Riley 210 1$aLondon ;$aPortland, Or. :$cFrank Cass,$d2000. 215 $a1 online resource (485 p.) 300 $aDescription based upon print version of record. 311 08$a0-7146-4444-7 311 08$a0-7146-4893-0 320 $aIncludes bibliographical references and index. 327 $aCover; NAPOLEON AND THE WORLD WAR OF 1813; Title Page; Copyright Page; Table of Contents; List of Illustrations; List of Maps and Figures; Foreword; Legend to Maps; PART ONE: COALITION AND WORLD WAR; I: INTRODUCTION; II: A NEW ORDER - THE 6TH COALITION IN EUROPE; III: NAPOLEON AS COALITION COMMANDER; IV: WORLD WAR - THE CONTINENTAL SYSTEM AND THE AMERICAS; i. The Louisiana Purchase; ii. The Continental System; iii. America; PART TWO: CENTRAL EUROPE; V: AFTER 1812 - EUROPE REARMS; i. France: The Empire at Bay; ii. A New Alliance; VI: JANUARY TO APRIL 1813; i. Allied Unity 327 $aii. Eugene's Delaying Operationiii. The Grand Plan; VII: THE SPRING CAMPAIGN; i. The Approach to Liitzen; ii. Liitzen - The Meeting Battle; iii. Lutzen to Bautzen, 3-19 May 1813; iv. Bautzen; v. After Bautzen; VIII: THE TEN WEEKS' TRUCE; i. Why the Truce?; ii. The Austrian Mediation; iii. The Allies; iv. Napoleon; IX: DRESDEN; i. March and Counter-march; ii. At Dresden; iii. The Battle of 26 August; iv. The Battle of 27 August; iv. After Dresden; X: CLOSING IN; i. The Defeat of Ney; ii. Lost Opportunities; iii. Behind the Elbe; XI: LEIPZIG; i. The Nations Assemble 327 $aii. The Battles of 16 October - Wachau, Lindenau and Mockerniii. The Battle Lost; iv. The Storming of Leipzig; v. Aftermath; XII: ACROSS THE RHINE; PART THREE: SPAIN AND THE MEDITERRANEAN; XIII: IN FORTUNE'S WAY; i. The Spanish Ulcer; ii. The Allies; XIV: THE CAMPAIGN OF VITORIA; i. Surprise and Sea Power; ii. On the March; iii. The Defeat of Joseph; XV: ON THE FRONTIER; i. The Pursuit of Joseph; ii. A Dilemma; iii. The Coming of Soult; XVI: NINE DAYS IN THE PYRENEES; i. The Battles of 25 July: San Sebastian, Maya and Roncesvalles; ii. The Allied Concentration; iii. Sorauren 327 $aiv. The Pursuit to EchalarXVII: NEWS FROM PRAGUE; i. Siege Warfare; ii. The Heights of San Marcial; iii. The Passage of the Bidassoa; XVIII: THE WAR IN THE MEDITERRANEAN; i. The Campaign in Catalonia; ii. Castalla; iii. Tarragona; iv. Suchet abandons Valencia; v. Bentinck's Advance to Tarragona; vi. Suchet and Soult; vii. Villafranca and the Combat of Ordal; viii.Bentinck in Sicily; XIX: UPON THE SACRED TERRITORY; PART FOUR: AMERICA; XX: MR MADISON'S WAR; i. A Matter of Marching; ii. Strange Bedfellows; XXI: THE INVASION OF THE NORTH-WEST; i. Raisin River; ii. Proctor's Counter-Offensive 327 $aiii. MoraviantownXXII: DEARBORN'S INVASION OF THE NORTH; i. York; ii. The Invasion of the Niagara Peninsula; iii. Sackett's Harbor; iv. The Allied Counter-Attack; v. The Destruction of Buffalo; XXIII: MONTREAL AND THE ST LAWRENCE; i. Chateauguay; ii. Crysler's Farm; XXIV: THE ROAD TO GHENT; CONCLUSION; XXV: CONCLUSION: THE PARTNERSHIP OF UNEOUALS; i. The Politics of Coalition; ii. Allied Command; iii. Fighting Coalition War; Chronology of 1813; Bibliography; Index of Persons 330 $aThis analysis of the world war between Napoleon and the 6th coalition in 1813 covers operations in Europe, Spain and North America. It examines the differences between alliances and coalitions, comparing the long-term international relationships in alliances and the short-term union of coalitions. 606 $aNapoleonic Wars, 1800-1815$xDiplomatic history 606 $aWars of Liberation, 1813-1814 607 $aFrance$xForeign relations$y1792-1815 607 $aFrance$xColonies$zAmerica 615 0$aNapoleonic Wars, 1800-1815$xDiplomatic history. 615 0$aWars of Liberation, 1813-1814. 676 $a940.27 700 $aRiley$b J. P$g(Jonathon P.),$0295110 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910964274203321 996 $aNapoleon and the World War of 1813$94403592 997 $aUNINA