LEADER 02709oam 22007212a 450 001 9910830874103321 005 20230828220822.0 010 $a1-280-56099-1 010 $a9786610560998 010 $a3-527-60281-X 035 $a(CKB)1000000000019126 035 $a(MH)002725318-X 035 $a(SSID)ssj0000306013 035 $a(PQKBManifestationID)11228736 035 $a(PQKBTitleCode)TC0000306013 035 $a(PQKBWorkID)10298580 035 $a(PQKB)10243671 035 $a(MiAaPQ)EBC4956450 035 $a(Au-PeEL)EBL4956450 035 $a(CaONFJC)MIL56099 035 $a(OCoLC)824553956 035 $a(EXLCZ)991000000000019126 100 $a19920214d1992 uy 0 101 0 $aeng 135 $aurcnu|||||||| 181 $ctxt 182 $cc 183 $acr 200 10$aPhysical properties of III-V semiconductor compounds $eInP, InAs, GaAs, GaP, InGaAs, and InGaAsP /$fSadao Adachi$b[electronic resource] 210 $aNew York $cWiley$dc1992 215 $a1 online resource (xviii, 318 p. )$cill. ; 300 $a"A Wiley-Interscience publication." 311 $a0-471-57329-9 320 $aIncludes bibliographical references and indexes. 330 $aThis study explores the key properties of III-V compounds and presents the various material parameters and constants of these semiconductors for a number of research applications. The experimental and theoretical data has been summarized in tabular, graphical and functional formats. 606 $aGallium arsenide semiconductors 606 $aIndium alloys 606 $aIndium phosphide 606 $aGallium arsenide semiconductors 606 $aIndium alloys 606 $aIndium phosphide 606 $aElectricity & Magnetism$2HILCC 606 $aPhysics$2HILCC 606 $aPhysical Sciences & Mathematics$2HILCC 615 0$aGallium arsenide semiconductors. 615 0$aIndium alloys. 615 0$aIndium phosphide. 615 0$aGallium arsenide semiconductors 615 0$aIndium alloys 615 0$aIndium phosphide 615 7$aElectricity & Magnetism 615 7$aPhysics 615 7$aPhysical Sciences & Mathematics 676 $a537.6/226 700 $aAdachi$b Sadao$f1950-$01611959 801 0$bDLC 801 1$bDLC 801 2$bDLC 906 $aBOOK 912 $a9910830874103321 996 $aPhysical properties of III-V semiconductor compounds$94063844 997 $aUNINA 999 $aThis Record contains information from the Harvard Library Bibliographic Dataset, which is provided by the Harvard Library under its Bibliographic Dataset Use Terms and includes data made available by, among others the Library of Congress