LEADER 05207nam 2200613Ia 450 001 9910830815903321 005 20230725023330.0 010 $a1-282-68431-0 010 $a9786612684319 010 $a1-4443-2023-8 010 $a1-4443-2021-1 035 $a(CKB)2670000000014773 035 $a(EBL)514445 035 $a(OCoLC)609862965 035 $a(SSID)ssj0000358550 035 $a(PQKBManifestationID)11265264 035 $a(PQKBTitleCode)TC0000358550 035 $a(PQKBWorkID)10376921 035 $a(PQKB)10702593 035 $a(MiAaPQ)EBC514445 035 $a(EXLCZ)992670000000014773 100 $a20091120d2010 uy 0 101 0 $aeng 135 $aur|n|---||||| 181 $ctxt 182 $cc 183 $acr 200 00$aCrystal growth processes based on capillarity$b[electronic resource] $eczochralski, floating zone, shaping and crucible techniques /$fedited by Thierry Duffar 210 $aChichester, West Sussex ;$aHoboken, N.J. $cWiley$d2010 215 $a1 online resource (567 p.) 300 $aDescription based upon print version of record. 311 $a0-470-71244-9 320 $aIncludes bibliographical references and index. 327 $aCrystal Growth Processes Based on Capillarity: Czochralski, Floating Zone,Shaping and Crucible Techniques; Contents; Preface; Introduction; Acknowledgements; Nomenclature; Contributors; 1: Basic Principles of Capillarity in Relation to Crystal Growth; 1.1 Definitions; 1.1.1 Characteristic Energies of Surfaces and Interfaces; 1.1.2 Capillary Pressure; 1.1.3 Surface Energy versus Surface Tension; 1.2 Contact Angles; 1.2.1 Thermodynamics; 1.2.2 Dynamics of Wetting; 1.2.3 Measurements of Contact Angle and Surface Tension by the Sessile Drop Technique 327 $a1.2.4 Selected Data for the Contact Angle for Systems of Interest for Crystal Growth1.3 Growth Angles; 1.3.1 Theory; 1.3.2 Measurements of Growth Angles: Methods and Values; 1.3.3 Application of the Growth Angle Condition in Simulations of Crystal Growth; 1.3.4 Summary; Acknowledgements; References; 2: The Possibility of Shape Stability in Capillary Crystal Growth and Practical Realization of Shaped Crystals; 2.1 Crucible-Free Crystal Growth - Capillary Shaping Techniques; 2.2 Dynamic Stability of Crystallization - the Basis of Shaped Crystal Growth by CST; 2.2.1 Lyapunov Equations 327 $a2.2.2 Capillary Problem - Common Approach2.2.3 Equation of Crystal Dimension Change Rate; 2.2.4 Equation of Crystallization Front Displacement Rate; 2.2.5 Stability Analysis in a System with Two Degrees of Freedom; 2.3 Stability Analysis and Growth of Shaped Crystals by the Cz Technique; 2.3.1 Capillary Problem; 2.3.2 Temperature Distribution in the Crystal-Melt System; 2.3.3 Stability Analysis and Shaped Crystal Growth; 2.3.4 Dynamic Stability Problem for the Kyropoulos Technique; 2.4 Stability Analysis and Growth of Shaped Crystals by the Verneuil Technique 327 $a2.4.1 Principal Schemes of Growth2.4.2 Theoretical Investigation; 2.4.3 Practical Results of the Theoretical Analysis; 2.4.4 Stability Analysis-Based Automation; 2.5 Stability Analysis and Growth of Shaped Crystals by the FZ Technique; 2.6 TPS Techniques: Capillary Shaping and Impurity Distribution; 2.6.1 Capillary Boundary Problem for TPS; 2.6.2 Stability Analysis; 2.6.3 Experimental Tests of the Capillary Shaping Theory Statements; 2.6.4 Impurity Distribution; 2.6.5 Definition of TPS; 2.6.6 Brief History of TPS; 2.7 Shaped Growth of Ge , Sapphire, Si, and Metals: a Brief Presentation 327 $a2.7.1 Ge2.7.2 Sapphire; 2.7.3 Si; 2.7.4 Metals and Alloys; 2.8 TPS Peculiarities; References; 3: Czochralski Process Dynamics and Control Design; 3.1 Introduction and Motivation; 3.1.1 Overview of Cz Control Issues; 3.1.2 Diameter Control; 3.1.3 Growth Rate Control; 3.1.4 Reconstruction of Quantities not Directly Measured; 3.1.5 Specific Problems for Control in Cz Crystal Growth; 3.1.6 PID Control vs. Model-Based Control; 3.1.7 Components of a Control System; 3.1.8 Modelling in Crystal Growth Analysis and Control; 3.2 Cz Control Approaches; 3.2.1 Proper Choice of Manipulated Variables 327 $a3.2.2 Feedforward Control 330 $aThe demand for large, high-quality single crystals has increased rapidly as a result of the growing semiconductor and optics industry, where perfect single crystals are used as substrates or components for devices. Crystal Growth Processes Based on Capillarity covers all crystal growth techniques and explains why and how they are dependent on liquid surface phenomena, or capillarity. Each chapter addresses fundamental capillary effects, detailed experimental developments, technically important processes, and associated software. The book includes: Basic prin 606 $aCrystal growth 606 $aCrystallization 615 0$aCrystal growth. 615 0$aCrystallization. 676 $a548.5 676 $a548/.5 701 $aDuffar$b Thierry$01611963 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910830815903321 996 $aCrystal growth processes based on capillarity$93940476 997 $aUNINA