LEADER 05717nam 2200697 a 450 001 9910830721603321 005 20170809164643.0 010 $a1-280-85476-6 010 $a9786610854769 010 $a0-470-03592-7 010 $a1-60119-377-7 010 $a0-470-03591-9 035 $a(CKB)1000000000357161 035 $a(EBL)292558 035 $a(SSID)ssj0000071708 035 $a(PQKBManifestationID)11107322 035 $a(PQKBTitleCode)TC0000071708 035 $a(PQKBWorkID)10093820 035 $a(PQKB)10294047 035 $a(MiAaPQ)EBC292558 035 $a(OCoLC)177200803 035 $a(EXLCZ)991000000000357161 100 $a20060912d2006 uy 0 101 0 $aeng 135 $aur|n|---||||| 181 $ctxt 182 $cc 183 $acr 200 10$aDesign and characterization of integrated varactors for RF applications$b[electronic resource] /$fI?n?igo Gutie?rrez, Juan Mele?ndez, Erik Herna?ndez 210 $aChichester, West Sussex, England ;$aHoboken, NJ $cWiley$dc2006 215 $a1 online resource (182 p.) 300 $aDescription based upon print version of record. 311 $a0-470-02587-5 320 $aIncludes bibliographical references and index. 327 $aDesign and Characterization of Integrated Varactors for RF Applications; Contents; List of Figures; List of Tables; Preface; Acknowledgements; 1 Introduction; 1.1 Passive Elements; 1.2 Figures of Merit of Varactors; 1.2.1 Quality Factor; 1.2.2 Tuning Range; 1.2.3 Self-resonant Frequency(fR); 1.2.4 Effective Silicon Area; 1.2.5 Absolute Capacity Value; 1.3 Principal Types of Varactor Manufacture; 1.3.1 Discrete Varactors; 1.3.2 MEMS Varactors; 1.3.3 BST Varactors; 1.3.4 Integrated Varactors using Standard Technologies; References; 2 PN-junction Varactors 327 $a2.1 The Operating Principle of a PN-junction Varactor2.1.1 Electrical Phenomena in a PN-junction Varactor; 2.2 Different Architectures of PN-junction Varactors; 2.2.1 Different Configurations of PN-junction Varactors; 2.3 Influence of Bias Voltage on the Behaviour of a PN-junction Varactor; 2.4 Influence of Geometric Parameters on the Behaviour of a PN-junction Varactor; 2.4.1 Influence in the Variation of the Number of Islands; 2.4.2 Influence of the Size of the Islands; 2.4.3 Influence of the Distance Between Islands; 2.4.4 Variation of the Size of the N Well 327 $a2.5 Influence of the Working Frequency on the Results2.5.1 Influence of the Frequency on the Quality of a Varactor; 2.5.2 Influence of the Frequency on the Capacitance of a Varactor; 2.6 Comparison Between the Different Types of PN-junction Varactors; 2.6.1 Comparison According to the Effective Silicon Area; 2.6.2 Comparison According to the Quality Factor; References; 3 MOS Varactors; 3.1 Operating Principles of an NMOS Varactor; 3.1.1 Operating Ranges of the NMOS Varactor; 3.1.2 Electrical Phenomena of an NMOS Varactor in Accumulation Mode 327 $a3.1.3 Electrical Phenomena of an NMOS Varactor in Depletion Mode3.2 NMOS Varactors; 3.2.1 Operating Ranges of the NMOS Varactor; 3.3 Influence of the Operating Mode on an NMOS Varactor; 3.4 Influence of Bias Voltage on the Behaviour of an NMOS Accumulation Varactor; 3.5 Influence of Geometric Parameters on the Behaviour of an NMOS Varactor; 3.5.1 Influence of the Variation of the Varactor Size; 3.5.2 Influence of the Varactor Gate Length on its Performance; 3.5.3 Influence of the Varactor Gate Width on its Performance; 3.6 Influence of the Working Frequency on the Results; References 327 $a4 Measurement Techniques for Integrated Varactors4.1 Test System; 4.2 Equipment Required for the On-Wafer Testing of Integrated Varactors; 4.2.1 Test Probes; 4.2.2 Connectivity; 4.3 Calibrating the Test System; 4.4 Test Structures; 4.4.1 Choosing the Test Structure Configuration; 4.4.2 Design of the Test Structures; 4.4.3 Effects Introduced by the Test Structures; 4.5 Test Structure DE-embedding Techniques; 4.5.1 Single-Short Structure; 4.5.2 Single-Open Structure; 4.5.3 Thru Structure; 4.6 Characterization of Integrated Varactors; 4.7 Test System Verification 327 $a4.7.1 Error Introduced by Positioning the Test Probes on the Pads 330 $aVaractors are passive semiconductor devices used in electronic circuits, as a voltage-controlled way of storing energy in order to boost the amount of electric charge produced. In the past, the use of low-cost fabrication processes such as complementary metal oxide semiconductor (CMOS) and silicon germanium (SiGe) were kept for integrated circuits working in frequency ranges below the GHz. Now, the increased working frequency of radio frequency integrated circuits (RF ICs) for communication devices, and the trend of system-on-chip technology, has pushed the requirements of varactors to the lim 606 $aVaractors$xDesign and construction 606 $aRadio capacitors$xDesign and construction 606 $aRadio circuits$xDesign and construction 606 $aIntegrated circuits$xDesign and construction 615 0$aVaractors$xDesign and construction. 615 0$aRadio capacitors$xDesign and construction. 615 0$aRadio circuits$xDesign and construction. 615 0$aIntegrated circuits$xDesign and construction. 676 $a621.3815 676 $a621.381522 700 $aGutie?rrez$b I?n?igo$0725293 701 $aMele?ndez$b Juan$f1974-$01606445 701 $aHerna?ndez$b Erik$0725291 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910830721603321 996 $aDesign and characterization of integrated varactors for RF applications$93932244 997 $aUNINA