LEADER 05607nam 2200685Ia 450 001 9910830329803321 005 20230725053000.0 010 $a1-283-40526-1 010 $a9786613405265 010 $a1-119-99104-8 010 $a1-119-99103-X 035 $a(CKB)3460000000000097 035 $a(EBL)697518 035 $a(SSID)ssj0000482460 035 $a(PQKBManifestationID)11306138 035 $a(PQKBTitleCode)TC0000482460 035 $a(PQKBWorkID)10526706 035 $a(PQKB)11470967 035 $a(MiAaPQ)EBC697518 035 $a(OCoLC)711782150 035 $a(EXLCZ)993460000000000097 100 $a20110113d2011 uy 0 101 0 $aeng 135 $aur|n|---||||| 181 $ctxt 182 $cc 183 $acr 200 00$aZinc oxide materials for electronic and optoelectronic device applications$b[electronic resource] /$fedited by Cole W. Litton, Donald C. Reynolds, Thomas C. Collins 210 $aChichester, West Sussex $cWiley$d2011 215 $a1 online resource (387 p.) 225 1 $aWiley series in materials for electronic and optoelectronic applications 300 $aDescription based upon print version of record. 311 $a0-470-51971-1 320 $aIncludes bibliographical references and index. 327 $aZinc Oxide Materials for Electronic and Optoelectronic Device Applications; Contents; Series Preface; Preface; List of Contributors; 1 Fundamental Properties of ZnO; 1.1 Introduction; 1.1.1 Overview; 1.1.2 Organization of Chapter; 1.2 Band Structure; 1.2.1 Valence and Conduction Bands; 1.3 Optical Properties; 1.3.1 Free and Bound Excitons; 1.3.2 Effects of External Magnetic Field on ZnO Excitons; 1.3.3 Strain Field; 1.3.4 Spatial Resonance Dispersion; 1.4 Electrical Properties; 1.4.1 Intrinsic Electronic Transport Properties; 1.4.2 n-type Doping and Donor Levels 327 $a1.4.3 p-type Doping and Dopability1.4.4 Schottky Barriers and Ohmic Contacts; 1.5 Band Gap Engineering; 1.5.1 Homovalent Heterostructures; 1.5.2 Heterovalent Heterostructures; 1.6 Spintronics; 1.7 Summary; References; 2 Optical Properties of ZnO; 2.1 Introduction; 2.2 Free Excitons; 2.3 Strain Splitting of the ?5 and ?6 Free Excitons in ZnO; 2.4 Photoluminescence from the Two Polar Faces of ZnO; 2.5 Bound-Exciton Complexes in ZnO; 2.6 Similarities in the Photoluminescence Mechanisms of ZnO and GaN 327 $a2.7 The Combined Effects of Screening and Band Gap Renormalization on the Energy of Optical Transitions in ZnO and GaN2.8 Closely Spaced Donor-Acceptor Pairs in ZnO; 2.9 Summary; References; 3 Electrical Transport Properties in Zinc Oxide; 3.1 Introduction; 3.2 Hall-Effect Analysis; 3.2.1 Single-Band Conduction; 3.2.2 Two-Band Mixed Conduction; 3.2.3 Conducting Surface Layers; 3.3 Donor States and n-type Doping; 3.3.1 Native Point Defects - Donors; 3.3.2 Substitutional Donors; 3.4 Hydrogen; 3.5 Acceptor States and p-type Doping; 3.5.1 Native Point Defects - Acceptors 327 $a3.5.2 Substitutional Acceptors3.6 Photoconductivity; 3.7 Summary; References; 4 ZnO Surface Properties and Schottky Contacts; 4.1 Historical Background of Schottky Contacts on ZnO; 4.1.1 ZnO Surface Effects; 4.1.2 Early Schottky Barrier Studies; 4.2 Recent Schottky Barrier Studies; 4.2.1 Surface Cleaning in Vacuum; 4.2.2 Surface Cleaning Effects on Impurities and Defects; 4.3 The Influence of Surface Preparation on Schottky Barriers; 4.4 The Influence of Defects on Schottky Barriers; 4.5 The Influence of ZnO Polarity on Schottky Barriers; 4.6 The Influence of Chemistry 327 $a4.7 Charge Transport and Extended Metal-ZnO Schottky Barriers4.8 Conclusion; Acknowledgements; References; 5 Native Point Defects and Doping in ZnO; 5.1 Introduction; 5.2 Theoretical Framework; 5.3 Native Point Defects; 5.3.1 Oxygen Vacancies; 5.3.2 Zinc Interstitials; 5.3.3 Zinc Antisites; 5.3.4 Zinc Vacancies; 5.3.5 Defect Migration; 5.4 Donor Impurities; 5.4.1 Aluminum, Gallium and Indium; 5.4.2 Fluorine; 5.4.3 Hydrogen; 5.5 Acceptor Impurities; 5.5.1 Lithium; 5.5.2 Copper; 5.5.3 Nitrogen; 5.5.4 Phosphorous, Arsenic and Antimony; 5.5.5 Co-Doping; 5.6 Isoelectronic Impurities 327 $aAcknowledgements 330 $aZinc Oxide (ZnO) powder has been widely used as a white paint pigment and industrial processing chemical for nearly 150 years. However, following a rediscovery of ZnO and its potential applications in the 1950s, science and industry alike began to realize that ZnO had many interesting novel properties that were worthy of further investigation. ZnO is a leading candidate for the next generation of electronics, and its biocompatibility makes it viable for medical devices. This book covers recent advances including crystal growth, processing and doping and also discusses the problems and issues 410 0$aWiley series in materials for electronic and optoelectronic applications. 606 $aZinc oxide 606 $aElectronic apparatus and appliances$xMaterials 606 $aOptoelectronic devices$xMaterials 615 0$aZinc oxide. 615 0$aElectronic apparatus and appliances$xMaterials. 615 0$aOptoelectronic devices$xMaterials. 676 $a669/.52 686 $aTEC021000$2bisacsh 701 $aLitton$b Cole W$01615745 701 $aReynolds$b Donald C$0605947 701 $aCollins$b Thomas C.$f1936-$0605948 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910830329803321 996 $aZinc oxide materials for electronic and optoelectronic device applications$93946080 997 $aUNINA