LEADER 03773nam 2200661 450 001 9910830146103321 005 20210208183758.0 010 $a1-119-95757-5 010 $a1-282-78266-5 010 $a9786612782664 010 $a0-470-66946-2 010 $a0-470-66945-4 035 $a(CKB)2670000000043974 035 $a(EBL)589155 035 $a(SSID)ssj0000423029 035 $a(PQKBManifestationID)11272651 035 $a(PQKBTitleCode)TC0000423029 035 $a(PQKBWorkID)10440491 035 $a(PQKB)10658620 035 $a(MiAaPQ)EBC589155 035 $a(OCoLC)669165467 035 $a(EXLCZ)992670000000043974 100 $a20160107h20112011 uy 0 101 0 $aeng 135 $aur|n|---||||| 181 $ctxt 182 $cc 183 $acr 200 00$aMercury cadmium telluride $egrowth, properties, and applications /$fedited by Peter Capper and James Garland 205 $a11th ed. 210 1$aChichester, England :$cWiley,$d2011. 210 4$dİ2011 215 $a1 online resource (600 p.) 225 1 $aWiley Series in Materials for Electronic & Optoelectronic Applications 300 $aDescription based upon print version of record. 311 $a0-470-69706-7 320 $aIncludes bibliographical references at the end of each chapters and index. 327 $aMercury Cadmium Telluride; Contents; Series Preface; Preface; Foreword; List of Contributors; Part One - Growth; 1 Bulk Growth of Mercury Cadmium Telluride (MCT); 2 Bulk Growth of CdZnTe/CdTe Crystals; 3 Properties of Cd(Zn)Te Relevant to Use as Substrates; 4 Substrates for the Epitaxial Growth of MCT; 5 Liquid Phase Epitaxy of MCT; 6 Metal-Organic Vapor Phase Epitaxy (MOVPE) Growth; 7 MBE Growth of Mercury Cadmium Telluride; Part Two - Properties; 8 Mechanical and Thermal Properties; 9 Optical Properties of MCT; 10 Diffusion in MCT; 11 Defects in HgCdTe ?C Fundamental 327 $a12 Band Structure and Related Properties of HgCdTe13 Conductivity Type Conversion; 14 Extrinsic Doping; 15 Structure and Electrical Characteristics of Metal/MCT Interfaces; 16 MCT Superlattices for VLWIR Detectors and Focal Plane Arrays; 17 Dry Plasma Processing of Mercury Cadmium Telluride and Related II-VIs; 18 MCT Photoconductive Infrared Detectors; Part Three - Applications; 19 HgCdTe Photovoltaic Infrared Detectors; 20 Nonequilibrium, Dual-Band and Emission Devices; 21 HgCdTe Electron Avalanche Photodiodes (EAPDs); 22 Room Temperature IR Photodetectors; Index 330 $aMercury cadmium telluride (MCT) is the third most well-regarded semiconductor after silicon and gallium arsenide and is the material of choice for use in infrared sensing and imaging. The reason for this is that MCT can be 'tuned' to the desired IR wavelength by varying the cadmium concentration. Mercury Cadmium Telluride: Growth, Properties and Applications provides both an introduction for newcomers, and a comprehensive review of this fascinating material. Part One discusses the history and current status of both bulk and epitaxial growth techniques, Part Two is concerned with the w 410 0$aWiley series in materials for electronic and optoelectronic applications. 606 $aMercury cadmium tellurides 606 $aSemiconductors$xDoping 606 $aInfrared detectors$xMaterials 615 0$aMercury cadmium tellurides. 615 0$aSemiconductors$xDoping. 615 0$aInfrared detectors$xMaterials. 676 $a661/.0726 700 $aCapper$b Peter$0463569 702 $aCapper$b Peter 702 $aGarland$b James$f1933- 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910830146103321 996 $aMercury cadmium telluride$93984804 997 $aUNINA