LEADER 05342nam 2200649Ia 450 001 9910830095503321 005 20200820215741.0 010 $a1-282-27952-1 010 $a9786612279522 010 $a3-527-62841-X 010 $a3-527-62842-8 035 $a(CKB)1000000000789703 035 $a(EBL)482191 035 $a(OCoLC)741449488 035 $a(SSID)ssj0000391846 035 $a(PQKBManifestationID)11278211 035 $a(PQKBTitleCode)TC0000391846 035 $a(PQKBWorkID)10346979 035 $a(PQKB)11556949 035 $a(MiAaPQ)EBC482191 035 $a(PPN)146317157 035 $a(EXLCZ)991000000000789703 100 $a20071029g20082009 uy 0 101 0 $aeng 135 $aur|n|---||||| 181 $ctxt 182 $cc 183 $acr 200 10$aHandbook of nitride semiconductors and devices$hVol. 2$iElectronic and optical processes in nitrides$b[electronic resource] /$fHadis Morkoc ? 210 $aWeinheim $cWiley-VCH ;$a[Chichester $cJohn Wiley, distributor]$dc2008-c2009 215 $a1 online resource (885 p.) 225 1 $aHandbook of Nitride Semiconductors and Devices (VCH) 300 $aDescription based upon print version of record. 311 $a3-527-40838-X 320 $aIncludes bibliographical references and index. 327 $aHandbook of Nitride Semiconductors and Devices; Contents; Preface; Color Tables; 1 Metal Contacts to GaN and Processing; Introduction; 1.1 A Primer for Semiconductor-Metal Contacts; 1.2 Current Flow in Metal-Semiconductor Junctions; 1.2.1 The Regime Dominated by Thermionic Emission; 1.2.2 Thermionic Field Emission Regime; 1.2.3 Direct Tunneling Regime; 1.2.4 Leakage Current; 1.3 GaN Schottky Barriers for High-Voltage Rectifiers; 1.4 Ohmic Contact Resistance; 1.4.1 Specific Contact Resistivity; 1.4.2 Semiconductor Resistance; 1.5 Determination of the Contact Resistivity 327 $a1.6 Ohmic Contacts to GaN1.6.1 Nonalloyed Ohmic Contacts; 1.6.2 Alloyed Ohmic Contacts on n-Type GaN; 1.6.3 Contacts to p-Type GaN and Transparent Conducting Oxides; 1.6.4 Effect of Surface Treatment on Ohmic Contacts; 1.6.5 Case of a Forward-Biased p-n Junction in Conjunction with Nonohmic Contacts to p-GaN; 1.7 Structural Analysis of Ohmic Contacts on GaN; 1.8 Etching Techniques for III Nitrides; 1.8.1 Dry (Plasma) Etching; 1.8.1.1 Electron Cyclotron Resonance Etching; 1.8.1.2 Ion Milling; 1.8.1.3 Reactive Ion Etching; 1.8.1.4 Inductively Coupled Plasma Etching 327 $a1.8.1.5 Selective Etching of GaN/AlGaN1.8.1.6 Dry Etching of p-GaN; 1.8.1.7 Dry Etching on Ga- and N-Face of Freestanding GaN Substrate; 1.8.1.8 Magnetron Reactive Ion Etching; 1.8.1.9 Chemically Assisted Ion Beam Etching (CAIBE); 1.8.1.10 RF Plasma Etching of GaN; 1.8.2 Laser Ablation Etching of GaN; 1.8.3 Wet Etching; 1.8.4 Photochemical Etching; 1.9 Implant Isolation; 1.10 Process Damage; References; 2 Determination of Impurity and Carrier Concentrations; Introduction; 2.1 Impurity Binding Energy; 2.2 Conductivity Type: Hot Probe and Hall Measurements; 2.2.1 Measurement of Mobility 327 $a2.3 Semiconductor Statistics, Density of States, and Carrier Concentration2.3.1 Degeneracy Factor; 2.3.2 Charge Balance Equation and Carrier Concentration; 2.3.2.1 n-Type Semiconductor; 2.3.2.2 p-Type Semiconductor; 2.3.2.3 Multiple Occupancy of the Valence Bands; 2.4 Capacitance-Voltage Measurements; Appendix 2.A. Fermi Integral; Appendix 2.B. Density of States in 3D, 2D, and 1D Systems; 2.B.1. Three-Dimensional Structure; 2.B.2. Two-Dimensional Structure; 2.B.3. One-Dimensional Structure; References; 3 Carrier Transport; 3.1 Prelude; 3.2 Carrier Scattering 327 $a3.2.1 Boltzmann Transport Equation3.2.2 Impurity Scattering; 3.2.2.1 Ionized Impurity Scattering; 3.2.2.2 Neutral Impurity Scattering; 3.2.3 Acoustic Phonon Scattering; 3.2.3.1 Deformation Potential Scattering; 3.2.3.2 Piezoelectric Scattering; 3.2.4 Optical Phonon Scattering; 3.2.4.1 Nonpolar Optical Phonon Scattering; 3.2.4.2 Polar Optical Phonon Scattering; 3.2.5 Short-Range Potential-Induced Scattering; 3.2.5.1 Alloy Potential-Induced Scattering; 3.2.5.2 Potential Barrier Scattering; 3.2.5.3 Potential Well Scattering; 3.2.5.4 Space Charge Scattering; 3.2.5.5 Dipole Scattering 327 $a3.2.6 Carrier-Carrier Scattering 330 $aThe three volumes of this handbook treat the fundamentals, technology and nanotechnology of nitride semiconductors with an extraordinary clarity and depth. They present all the necessary basics of semiconductor and device physics and engineering together with an extensive reference section. Volume 2 addresses the electrical and optical properties of nitride materials. It includes semiconductor metal contacts, impurity and carrier concentrations, and carrier transport in semiconductors. 410 0$aHandbook of Nitride Semiconductors and Devices (VCH) 606 $aSemiconductors$xMaterials 606 $aNitrides 615 0$aSemiconductors$xMaterials. 615 0$aNitrides. 676 $a621.38152 700 $aMorkoc ?$b Hadis$0920442 701 $aMorkoc ?$b Hadis$0920442 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910830095503321 996 $aHandbook of nitride semiconductors and devices$93916341 997 $aUNINA