LEADER 05190nam 22006374a 450 001 9910830033303321 005 20230617024528.0 010 $a1-280-26903-0 010 $a9786610269037 010 $a0-470-09073-1 010 $a0-470-09074-X 035 $a(CKB)111087027096442 035 $a(EBL)219720 035 $a(OCoLC)54511014 035 $a(SSID)ssj0000245781 035 $a(PQKBManifestationID)11200095 035 $a(PQKBTitleCode)TC0000245781 035 $a(PQKBWorkID)10179761 035 $a(PQKB)11757921 035 $a(MiAaPQ)EBC219720 035 $a(EXLCZ)99111087027096442 100 $a20030905d2003 uy 0 101 0 $aeng 135 $aur|n|---||||| 181 $ctxt 182 $cc 183 $acr 200 10$aSiGe heterojunction bipolar transistors$b[electronic resource] /$fPeter Ashburn 210 $aHoboken, NJ $cJohn Wiley & Sons$dc2003 215 $a1 online resource (288 p.) 300 $aDescription based upon print version of record. 311 $a0-470-84838-3 320 $aIncludes bibliographical references and index. 327 $aSiGe Heterojunction Bipolar Transistors; Contents; Preface; Physical Constants and Properties of Silicon and Silicon-Germanium; List of Symbols; 1 Introduction; 1.1 Evolution of Silicon Bipolar Technology; 1.2 Evolution of Silicon-Germanium HBT Technology; 1.3 Operating Principles of the Bipolar Transistor; References; 2 Basic Bipolar Transistor Theory; 2.1 Introduction; 2.2 Components of Base Current; 2.3 Fundamental Equations; 2.3.1 Assumptions; 2.4 Base Current; 2.4.1 Base Current in Shallow Emitters; 2.4.2 Base Current in Deep Emitters; 2.4.3 Recombination Current in the Neutral Base 327 $a2.5 Collector Current2.6 Current Gain; 2.7 Gummel Numbers; 3 Heavy Doping Effects; 3.1 Introduction; 3.2 Majority and Minority Carrier Mobility; 3.3 Bandgap Narrowing; 3.4 Minority Carrier Lifetime; 3.5 Gain and Heavy Doping Effects; 3.6 Non-uniform Doping Profiles; References; 4 Second-Order Effects; 4.1 Introduction; 4.2 Low Current Gain; 4.2.1 Recombination via Deep Levels; 4.2.2 Recombination Current in the Forward Biased Emitter/Base Depletion Region; 4.2.3 Generation Current in a Reverse Biased pn Junction; 4.2.4 Origins of Deep Levels in Bipolar Transistors; 4.3 High Current Gain 327 $a4.4 Basewidth Modulation4.5 Series Resistance; 4.6 Junction Breakdown; 4.6.1 Punch-through; 4.6.2 Zener Breakdown; 4.6.3 Avalanche Breakdown; 4.6.4 Junction Breakdown in Practice; 4.6.5 Common Base and Common Emitter Breakdown Voltages; 4.6.6 Trade-off between Gain and BV(CEO); References; 5 High-frequency Performance; 5.1 Introduction; 5.2 Forward Transit Time t(F); 5.2.1 Components of t(F); 5.2.2 Base Transit Time; 5.2.3 Emitter Delay; 5.2.4 Collector/Base Depletion Region Transit Time; 5.2.5 Emitter/Base Depletion Region Delay; 5.3 Cut-off Frequency f(T) 327 $a5.4 Maximum Oscillation Frequency f(max)5.5 Kirk Effect; 5.6 Base, Collector and Emitter Resistance; 5.6.1 Base Resistance; 5.6.2 Collector Resistance; 5.7 Emitter/Base and Collector/Base Depletion Capacitance; 5.8 Quasi-saturation; 5.9 Current Crowding; References; 6 Polysilicon Emitters; 6.1 Introduction; 6.2 Basic Fabrication and Operation of Polysilicon Emitters; 6.3 Diffusion in Polysilicon Emitters; 6.4 Influence of the Polysilicon/Silicon Interface; 6.5 Base Current in Polysilicon Emitters; 6.6 Effective Surface Recombination Velocity; 6.7 Emitter Resistance 327 $a6.8 Design of Practical Polysilicon Emitters6.8.1 Break-up of the Interfacial Oxide Layer and Epitaxial Regrowth; 6.8.2 Epitaxially Regrown Emitters; 6.8.3 Trade-off between Emitter Resistance and Current Gain in Polysilicon Emitters; 6.8.4 Emitter Plug Effect and in situ Doped Polysilicon Emitters; 6.9 pnp Polysilicon Emitters; References; 7 Properties and Growth of Silicon-Germanium; 7.1 Introduction; 7.2 Materials Properties of Silicon-Germanium; 7.2.1 Pseudomorphic Silicon-Germanium; 7.2.2 Critical Thickness; 7.2.3 Band Structure of Silicon-Germanium 327 $a7.3 Physical Properties of Silicon-Germanium 330 $aSiGe HBTs is a hot topic within the microelectronics community because of its applications potential within integrated circuits operating at radio frequencies. Applications range from high speed optical networking to wireless communication devices. The addition of germanium to silicon technologies to form silicon germanium (SiGe) devices has created a revolution in the semiconductor industry. These transistors form the enabling devices in a wide range of products for wireless and wired communications. This book features:SiGe products include chip sets for wireless cellular handsets 606 $aBipolar transistors 606 $aSilicon 606 $aGermanium 615 0$aBipolar transistors. 615 0$aSilicon. 615 0$aGermanium. 676 $a621.313 676 $a621.3815282 700 $aAshburn$b Peter$0491728 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910830033303321 996 $aSiGe heterojunction bipolar transistors$94124835 997 $aUNINA