LEADER 05345nam 2200625Ia 450 001 9910829999903321 005 20170810191302.0 010 $a1-280-64869-4 010 $a9786610648696 010 $a0-470-03337-1 010 $a0-470-01024-X 035 $a(CKB)1000000000357462 035 $a(EBL)274307 035 $a(OCoLC)86073322 035 $a(SSID)ssj0000206863 035 $a(PQKBManifestationID)11181285 035 $a(PQKBTitleCode)TC0000206863 035 $a(PQKBWorkID)10227841 035 $a(PQKB)10203378 035 $a(MiAaPQ)EBC274307 035 $a(PPN)150298706 035 $a(EXLCZ)991000000000357462 100 $a20060222d2006 uy 0 101 0 $aeng 135 $aur|n|---||||| 181 $ctxt 182 $cc 183 $acr 200 10$aMulti-voltage CMOS circuit design$b[electronic resource] /$fVolkan Kursun, Eby G. Friedman 210 $aChichester, England ;$aHoboken, NJ $cJohn Wiley$d2006 215 $a1 online resource (243 p.) 300 $aDescription based upon print version of record. 311 $a0-470-01023-1 320 $aIncludes bibliographical references and index. 327 $aMulti-voltage CMOS Circuit Design; Contents; About the Authors; Preface; Acknowledgments; Chapter 1 Introduction; 1.1 Evolution of Integrated Circuits; 1.2 Outline of the Book; Chapter 2 Sources of Power Consumption in CMOS ICs; 2.1 Dynamic Switching Power; 2.2 Leakage Power; 2.2.1 Subthreshold Leakage Current; 2.2.1.1 Short-Channel Effects; 2.2.1.2 Drain-Induced Barrier-Lowering; 2.2.1.3 Characterization of Subthreshold Leakage Current; 2.2.2 Gate Oxide Leakage Current; 2.2.2.1 Effect of Technology Scaling on Gate Oxide Leakage; 2.2.2.2 Characterization of Gate Oxide Leakage Current 327 $a2.2.2.3 Alternative Gate Dielectric Materials2.3 Short-Circuit Power; 2.4 Static DC Power; Chapter 3 Supply and Threshold Voltage Scaling Techniques; 3.1 Dynamic Supply Voltage Scaling; 3.2 Multiple Supply Voltage CMOS; 3.3 Threshold Voltage Scaling; 3.3.1 Body Bias Techniques; 3.3.1.1 Reverse Body Bias; 3.3.1.2 Forward Body Bias; 3.3.1.3 Bidirectional Body Bias; 3.3.2 Multiple Threshold Voltage CMOS; 3.4 Multiple Supply and Threshold Voltage CMOS; 3.5 Dynamic Supply and Threshold Voltage Scaling; 3.6 Circuits with Multiple Voltage and Clock Domains; 3.7 Summary 327 $aChapter 4 Low-Voltage Power Supplies4.1 Linear DC-DC Converters; 4.2 Switched-Capacitor DC-DC Converters; 4.3 Switching DC-DC Converters; 4.3.1 Operation of a Buck Converter; 4.3.2 Power Reduction Techniques for Switching DC-DC Converters; 4.4 Summary; Chapter 5 Buck Converters for On-Chip Integration; 5.1 Circuit Model of a Buck Converter; 5.1.1 MOSFET-Related Power Losses; 5.1.2 Filter Inductor-Related Power Losses; 5.1.3 Filter Capacitor-Related Power Losses; 5.1.4 Total Power Consumption of a Buck Converter; 5.2 Efficiency Analysis of a Buck Converter 327 $a5.2.1 Circuit Analysis for Global Maximum Efficiency5.2.2 Circuit Analysis with Limited Filter Capacitance; 5.2.3 Output Voltage Ripple Constraint; 5.3 Simulation Results; 5.4 Summary; Chapter 6 Low-Voltage Swing Monolithic DC-DC Conversion; 6.1 Circuit Model of a Low-Voltage Swing Buck Converter; 6.1.1 MOSFET Power Dissipation; 6.1.2 MOSFET Model; 6.1.3 Filter Inductor Power Dissipation; 6.2 Low-Voltage Swing Buck Converter Analysis; 6.2.1 Full Swing Circuit Analysis for Global Maximum Efficiency; 6.2.2 Low Swing Circuit Analysis for Global Maximum Efficiency; 6.3 Summary 327 $aChapter 7 High Input Voltage Step-Down DC-DC Converters7.1 Cascode Bridge Circuits; 7.1.1 Cascode Bridge Circuit for Input Voltages up to 2Vmax; 7.1.2 Cascode Bridge Circuit for Input Voltages up to 3Vmax; 7.1.3 Cascode Bridge Circuit for Input Voltages up to 4Vmax; 7.2 High Input Voltage Monolithic Switching DC-DC Converters; 7.2.1 Operation of Cascode DC-DC Converters; 7.2.2 Efficiency Characteristics of DC-DC Converters Operating at Input Voltages up to 2Vmax; 7.2.3 Efficiency Characteristics of DC-DC Converters Operating at Input Voltages up to 3Vmax; 7.3 Summary 327 $aChapter 8 Signal Transfer in ICs with Multiple Supply Voltages 330 $aThis book presents an in-depth treatment of various power reduction and speed enhancement techniques based on multiple supply and threshold voltages. A detailed discussion of the sources of power consumption in CMOS circuits will be provided whilst focusing primarily on identifying the mechanisms by which sub-threshold and gate oxide leakage currents are generated. The authors present a comprehensive review of state-of-the-art dynamic, static supply and threshold voltage scaling techniques and discuss the pros and cons of supply and threshold voltage scaling techniques. 606 $aMetal oxide semiconductors, Complementary 606 $aLow voltage integrated circuits$xDesign and construction 615 0$aMetal oxide semiconductors, Complementary. 615 0$aLow voltage integrated circuits$xDesign and construction. 676 $a621.39732 700 $aKursun$b Volkan$01612200 701 $aFriedman$b Eby G$01612201 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910829999903321 996 $aMulti-voltage CMOS circuit design$93940868 997 $aUNINA