LEADER 05290nam 2200637Ia 450 001 9910829980103321 005 20230422044854.0 010 $a1-281-76426-4 010 $a9786611764265 010 $a3-527-61378-1 010 $a3-527-61379-X 035 $a(CKB)1000000000376216 035 $a(EBL)482119 035 $a(SSID)ssj0000149737 035 $a(PQKBManifestationID)11147466 035 $a(PQKBTitleCode)TC0000149737 035 $a(PQKBWorkID)10239622 035 $a(PQKB)11789716 035 $a(MiAaPQ)EBC482119 035 $a(OCoLC)212131961 035 $a(EXLCZ)991000000000376216 100 $a19990621d1999 uy 0 101 0 $aeng 135 $aur|n|---||||| 181 $ctxt 182 $cc 183 $acr 200 10$aEtching in microsystem technology$b[electronic resource] /$fMichael Ko?hler ; translated by Antje Wiegand 210 $aWeinheim ;$aNew York $cWiley-VCH$dc1999 215 $a1 online resource (386 p.) 300 $aDescription based upon print version of record. 311 $a3-527-29561-5 320 $aIncludes bibliographical references ([345]-360) and index. 327 $aEtching in Microsystem Technology; Preface; Contents; Table of Contents; Symbols; Abbreviations; 1 Introduction; 2 Distinctive Features of Microtechnical Etching; 2.1 Etching as a Fashioning Method; 2.1.1 Limits of Additive Microtechnical Pattern Generation; 2.1.2 Subtractive Pattern Generation; 2.2 Etch Rate and Selectivity; 2.2.1 Etch Rate and Time Request; 2.2.2 The Etching Process; 2.2.3 Transport Processes; 2.2.4 Process Velocities; 2.3. Isotropic and Anisotropic Etching; 2.4 Edge Geometry and Roughness; 2.4.1 Deviations from Ideal Geometry; 2.4.2 Flank Geometry in Isotropic Etching 327 $a2.4.3 Fabrication of Low Slope Angles by Isotropic Etching2.4.4 Flank Geometries in Anisotropic Etching; 2.4.5 Setting the Flank Geometry by Partial Anisotropic Etching; 2.5 Accuracy; 2.6 Monitoring of Etching Processes; 3 Wet-Chemical Etching Methods; 3.1 Etching at the Interface Solid-Liquid; 3.2 Preparation of the Surface; 3.2.1 Surface Condition; 3.2.2 Cleaning; 3.2.3 Digital Etching; 3.3 Etching of Dielectric Materials; 3.3.1 Wet Etching by Physical Dissolution; 3.3.2 Wet-Chemical Etching of Non-Metals; 3.4 Etching of Metals and Semiconductors; 3.4.1 Outer-Currentless Etching 327 $a3.4.2 Selectivity in Outer-Currentless Etching3.4.3 Etching of Multilayer Systems Forming Local Elements; 3.4.4 Geometry-Dependent Etch Rates; 3.4.5 Geometry-Dependent Passivation; 3.4.6 Electrochemical Etching; 3.4.7 Photochemical Wet Etching; 3.4.8 Photoelectrochemical Etching(PEC); 3.5 Crystallographic Etching; 3.5.1 Chemical Wet-Etching of Monocrystalline Surfaces; 3.5.2 Anisotropic Etching of Monocrystalline Metals; 3.5.3 Anisotropic Etching of Silicon; 3.5.4 Anisotropic Electrochemical and Photoelectrochemical Etching; 3.5.5 Porous Silicon 327 $a3 S.6 Anisotropic Etching of Compound Semiconductors3.6 Preparation of Free-Standing Micropatterns; 3.6.1 Surface Micromachining; 3.6.2 Bulk Micromachining; 3.6.3 Porous Silicon as Sacrificial Material; 4 Dry-Etching Methods; 4.1 Removal at the Interface Solid-Gas; 4.2 Plasma-Free Etching in the Gas Phase; 4.2.1 Plasma-Free Dry-Etching with Reactive Gases; 4.2.2 Photo-Assisted Dry Etching with Reactive Gases; 4.2.3 Directly Writing Micropatterning by Laser Scanning Etching; 4.2.4 Electron-Beam-Assisted Vapour Etching; 4.3 Plasma Etching Methods 327 $a4.3.1 Material Removal by Reactions with Plasma Species4.3.2 Plasma Generation; 4.3.3 Plasma Etching in the Barrel Reactor; 4.3.4 Plasma Etching in the Down-Stream Reactor; 4.3.5 Plasma Etching in the Planar-Plate Reactor; 4.3.6 Magnetic-Field-Enhanced Plasma Etching; 4.3.7 Plasma Etching at Low Pressure and High Ion Density; 4.3.8 Forming of Etch Structures in Plasma Etching; 4.3.9 Geometry Influence on Plasma Etching; 4.3.10 Plasma Jet Etching (PJE); 4.3.11 Applications of Plasma Etching; 4.4 Etchig Methods with Energized Particles; 4.4.1 Sputter-Etching; 4.4.2 Reactive Ion Etching (RIE) 327 $a4.4.3 Magnetic-Field-Enhanced Reactive Ion Etching (MERIE) 330 $aMicrocomponents and microdevices are increasingly finding application in everyday life. The specific functions of all modern microdevices depend strongly on the selection and combination of the materials used in their construction, i.e., the chemical and physical solid-state properties of these materials, and their treatment. The precise patterning of various materials, which is normally performed by lithographic etching processes, is a prerequisite for the fabrication of microdevices.The microtechnical etching of functional patterns is a multidisciplinary area, the basis for the etching p 606 $aMasks (Electronics) 606 $aMicrolithography 606 $aPlasma etching 615 0$aMasks (Electronics) 615 0$aMicrolithography. 615 0$aPlasma etching. 676 $a621.381531 676 $a660 700 $aKo?hler$b J. M$g(J. Michael),$f1956-$0427318 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910829980103321 996 $aEtching in microsystem technology$94014444 997 $aUNINA