LEADER 05344nam 2200637Ia 450 001 9910829932703321 005 20230725023124.0 010 $a3-527-63289-1 010 $a1-283-86975-6 010 $a3-527-63288-3 010 $a3-527-63287-5 035 $a(CKB)2580000000004819 035 $a(EBL)700912 035 $a(OCoLC)794326248 035 $a(SSID)ssj0000527513 035 $a(PQKBManifestationID)11330957 035 $a(PQKBTitleCode)TC0000527513 035 $a(PQKBWorkID)10542219 035 $a(PQKB)10315255 035 $a(MiAaPQ)EBC700912 035 $a(EXLCZ)992580000000004819 100 $a20110426d2010 uy 0 101 0 $aeng 135 $aur|n|---||||| 181 $ctxt 182 $cc 183 $acr 200 00$aCrystal growth technology$b[electronic resource] $esemiconductors and dielectrics /$fedited by Peter Capper, Peter Rudolph 210 $aWeinheim $cWiley-VCH$dc2010 215 $a1 online resource (368 p.) 300 $aDescription based upon print version of record. 311 $a3-527-32593-X 320 $aIncludes bibliographical references and index. 327 $aCrystal Growth Technology: Semiconductors and Dielectrics; Foreword; Contents; Preface; List of Contributors; Part I: Basic Concepts in Crystal Growth Technology; 1: Thermodynamic Modeling of Crystal-Growth Processes; 1.1 Introduction; 1.2 General Approach of Thermodynamic Modeling; 1.2.1 Basics; 1.2.1.1 State Variables for the Description of Equilibrium Conditions; 1.2.1.2 The ChemSage Software Package; 1.3 Crystal Growth in the System Si-C-O-Ar (Example 1); 1.3.1 Selection of Species; 1.3.2 Test Calculation, Check of Consistency; 1.3.3 Calculation of Gibbs Free Energy for Selected Reactions 327 $a1.3.4 Minimization of Gibbs Free Energy of Complex Systems1.3.5 The Thermodynamic-Technological Model of the Edge-Defined Film-Fed Growth of Silicon; 1.4 Crystal Growth of Carbon-Doped GaAs (Example 2); 1.4.1 Components and Species in the System; 1.4.2 Results; 1.4.3 Extended Model; 1.5 Summary and Conclusions; Acknowledgments; References; 2: Modeling of Vapor-Phase Growth of SiC and AlN Bulk Crystals; 2.1 Introduction; 2.2 Model Description; 2.2.1 Quasi-Thermodynamic Model of AlN and AlGaN HVPE; 2.2.2 Modeling of Gas-Phase Nucleation in SiC CVD and HTCVD; 2.3 Results and Discussions 327 $a2.3.1 GaN, AlN, and AlGaN HVPE2.3.2 SiC HTCVD; 2.4 Conclusions; References; 3: Advanced Technologies of Crystal Growth from Melt Using Vibrational Influence; 3.1 Introduction; 3.2 Axial Vibrational Control in Crystal Growth; 3.3 AVC-Assisted Czochralski Method; 3.4 AVC-Assisted Bridgman Method; 3.5 AVC-Assisted Floating Zone Method; 3.6 Conclusions; Acknowledgments; References; Part II: Semiconductors; 4: Numerical Analysis of Selected Processes in Directional Solidification of Silicon for Photovoltaics; 4.1 Introduction; 4.2 Directional Solidification Method; 4.3 Crystallization Process 327 $a4.4 Impurity Incorporation in Crystals4.5 Summary; Acknowledgment; References; 5: Characterization and Control of Defects in VCz GaAs Crystals Grown without B2O3 Encapsulant; 5.1 Introduction; 5.2 Retrospection; 5.3 Crystal Growth without B2O3 Encapsulant; 5.4 Inclusions, Precipitates and Dislocations; 5.5 Residual Impurities and Special Defect Studies; 5.6 Electrical and Optical Properties in SI GaAs; 5.7 Boron in SC GaAs; 5.8 Outlook on TMF-VCz; 5.9 Conclusions; Acknowledgments; References; 6: The Growth of Semiconductor Crystals (Ge, GaAs) by the Combined Heater Magnet Technology 327 $a6.1 Introduction6.2 Selected Fundamentals; 6.2.1 Convection-Driven Forces; 6.2.2 The Features of Traveling Magnetic Fields; 6.3 TMF Generation in Heater-Magnet Modules; 6.4 The HMM Design; 6.5 Numerical Modeling; 6.6 Dummy Measurements; 6.7 Growth Results under TMF; 6.7.1 LEC of GaAs; 6.7.2 VGF of Ge; 6.8 Conclusions and Outlook; Acknowledgment; References; 7: Manufacturing of Bulk AlN Substrates; 7.1 Introduction; 7.1.1 Substrates for Group III Nitride Devices; 7.1.2 Growth of Bulk Group III Nitride Crystals; 7.1.3 Sublimation Growth of AlN Crystals; 7.2 Modeling; 7.3 Experiment 327 $a7.3.1 Pregrowth Processing 330 $aSemiconductors and dielectrics are two essential materials found in cell phones and computers, for example, and both are manufactured by growing crystals.Edited by the organizers of the International Workshop on Crystal Growth Technology, this ready reference is essential reading for materials scientists, chemists, physicists, computer hardware manufacturers, engineers, and those working in the chemical and semiconductor industries. They have assembled an international team of experts who present the current challenges, latest methods and new applications for producing these materials nece 606 $aCrystal growth 606 $aDielectrics 606 $aSemiconductors$xMaterials 615 0$aCrystal growth. 615 0$aDielectrics. 615 0$aSemiconductors$xMaterials. 676 $a660.284298 701 $aCapper$b Peter$0463569 701 $aRudolph$b Peter$cDozent Dr. sc. nat.$01635519 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910829932703321 996 $aCrystal growth technology$93976350 997 $aUNINA