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100   $a20070910d2007      uy         0
101 0 $aeng
135   $aur|n|---|||||
181   $ctxt
182   $cc
183   $acr
200 00$aHgCDTe system $ereference guide  /$fD. J. Fisher, editor
205   $a1st ed.
210  1$aStafa-Zuerich, Switzerland :$cTTP, Trans Tech Publications,$d[2007]
210  4$dİ2007
215   $a1 online resource (201 p.)
225 1 $aDefects and diffusion forum,$x1012-0386 ;$vv. 267
300   $aDescription based upon print version of record.
311   $a3-908451-44-2 
320   $aIncludes bibliographical references and indexes.
327   $aHgCdTe System - Reference Guide; Table of Contents; Abstracts
330   $aThis system, consisting of compositions lying between the end-members, CdTe and HgTe, constitutes perhaps the third most important semiconductor after Si and GaAs. Its importance stems from the ability to tailor the band-gap precisely between that (1.5eV) of the semiconductor, CdTe, and the zero value of the semi-metal, HgTe; giving, in particular, one of the most versatile infra-red detectors known. The intermediate compositions also benefit from the usual mechanisms which improve the mechanical properties of alloys. As an aid to those working on this system, this volume summarizes known diff
410  0$aDiffusion and defect data.$nPt. A,$pDefect and diffusion forum ;$vv. 267.
606   $aPhysical metallurgy
606   $aDiffusion
606   $aSolids$xDefects
615  0$aPhysical metallurgy.
615  0$aDiffusion.
615  0$aSolids$xDefects.
676   $a669.95
701   $aFisher$b D. J$0727312
801  0$bMiAaPQ
801  1$bMiAaPQ
801  2$bMiAaPQ
906   $aBOOK
912   $a9910827964703321
996   $aHgCDTe system$94038112
997   $aUNINA