LEADER 05135nam 2200649Ia 450 001 9910144289903321 005 20170810192858.0 010 $a1-282-30137-3 010 $a9786612301377 010 $a0-470-18652-6 010 $a0-470-18802-2 035 $a(CKB)1000000000376511 035 $a(EBL)469493 035 $a(OCoLC)814414783 035 $a(SSID)ssj0000366732 035 $a(PQKBManifestationID)11283102 035 $a(PQKBTitleCode)TC0000366732 035 $a(PQKBWorkID)10418680 035 $a(PQKB)10532332 035 $a(MiAaPQ)EBC469493 035 $a(PPN)221766618 035 $a(EXLCZ)991000000000376511 100 $a19840717d1952 uy 0 101 0 $aeng 135 $aur|n|---||||| 181 $ctxt 182 $cc 183 $acr 200 10$aThiophene and its derivatives$b[electronic resource] /$fHoward D. Hartough 205 $a99th ed. 210 $aNew York $cWiley$d1952 215 $a1 online resource (554 p.) 225 1 $aThe chemistry of heterocyclic compounds ;$v3 300 $aDescription based upon print version of record. 311 $a0-470-37554-X 320 $aIncludes bibliographies and indexes. 327 $aThiophene and Its Derivatives; Preface; Contents; I. General Discussion; I. History of Thiophene; II. Nomenclature of Thiophene Compounds; III. Occurrence of Thiophene Compounds in Nature; IV. Color Reactions of Thiophene Compounds; V. Estimation of Thiophene; VI. Removal of Thiophene and Its Homologs from Coal Tar Aromatics and Petroleum Stocks; VII. Isomorphism and Physical Properties of Thiophene Compounds; VIII. Odor of Thiophene and Its Derivatives; II. Biological and Pharmacological Activity of Thiophene and Its Derivatives; Introduction; I. General Biological Effects 327 $aII. Antihistamine CompoundsIII. Pressor Compounds; IV. Local Anesthetics; V. Hypnotics; VI. Antifebrides and Analgesics; VII. Antispasmodics; VIII. Anticonvulsants; IX. Germicides; X. Analogs of DDT; XI. Miscellaneous Compounds and Their Properties; III. Synthesis and Physical Properties of Thiophene and Its Homologs; I. Synthesis of Thiophene and Its Homologs; A. Synthesis of Thiophene and Its Homologs by Ring Closure of Hydrocarbons; 1. Socony-Vacuum Thiophene Process; (a) The Process; (b) Flow of Materials; (c) Equipment; 2. Miscellaneous Methods 327 $aB. Ring Closure of ?-Diketones, ?-Diacides, or ?-Keto AcidsII. Physical Properties of Thiophene and Its Homologs; III. Synthesis and Properties of the Hydrothiophenes; A. Thioplenes (Dihydrothiophenes); B. Dihydrothianaphthenes; C. Thiolanes; D. Preparation of 3-Thiolene- and Thiolanecarboxylic Acids; IV. Moloecular Structure and Spectroscopy of the Thiophene and Its Derivatives; Introduction; I. Molecular Structure and Related Properties; A . Bond Distances and Angles of Thiophene; B. Dipole Moments and Resonance in Thiophene Nucleus; C. Miscellanceous Related Properties 327 $aII. Theoretical Considerations from the Viewpoint of Spectroscopy and Summary of Published Spectral DataA. Electronic Absorption Spectra; B. Electronic Emission Spectra; C. Vibration Spectra; D. Thermodynamic Functions from Spectroscopic and Molecular Structure Data; III. Applied Spectroscopy; Introduction; A. Ultraviolet Absorption Spectra; B. Infrared Absorption Spectra; C. Mass Spectral Data; V. Factors Affecting Substitution Reactions in the Thiophene Nucleus; Introduction; I . Resonance in the Thiophene Nucleus; II. Directive Influcncc of the Sulfur Atom in Monosubstitution Reactions 327 $aIII. Directive Influences of Typical Ortho-para-Directing Groups on the Thiophene NucleusIV. Directive Influences of Typical Meta-Directing Groups; V. Methods of Synthesis in the Thiophene Series Based on Directive Influences in the Thiophene Nucleus; A. Preparation of 3-Substituted Thiophenes; 3-Alkylthiophenes; 3-Nitrothiophene; 3-Chlorothiophene; 3-Bromothiophene; 3-Iodothiophene; 3,4-Diaminothiophene; 3-Thenyl Bromide and Some of Its Reactions; B. Syntheses Involving the 3-Methylthiophene Nucleus; C. Synthesis of the Six Isomeric Methylthiophenecarboxylic Acids 327 $a5-Methyl-2-thiophenecarboxylic Acid (I) 330 $aChemistry of Heterocyclic Compounds publishes articles, letters to the Editor, reviews, and minireviews on the synthesis, structure, reactivity, and biological activity of heterocyclic compounds including natural products. The journal covers investigations in heterocyclic chemistry taking place in scientific centers of all over the world, including extensively the scientific institutions in Russia, Ukraine, Latvia, Lithuania and Belarus. 410 0$aChemistry of heterocyclic compounds ;$v3. 606 $aThiophenes 606 $aHeterocyclic compounds 615 0$aThiophenes. 615 0$aHeterocyclic compounds. 676 $a547.594 700 $aHartough$b H. D$g(Howard Dale),$f1913-1992.$0947072 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910144289903321 996 $aThiophene and its derivatives$92139769 997 $aUNINA LEADER 05390nam 2200685 450 001 9910827660703321 005 20200520144314.0 010 $a1-118-76046-8 010 $a1-118-76047-6 010 $a1-118-76045-X 035 $a(CKB)3710000000205248 035 $a(EBL)1753376 035 $a(SSID)ssj0001398824 035 $a(PQKBManifestationID)11845194 035 $a(PQKBTitleCode)TC0001398824 035 $a(PQKBWorkID)11446885 035 $a(PQKB)10654095 035 $a(OCoLC)881418298 035 $a(DLC) 2014023305 035 $a(Au-PeEL)EBL1753376 035 $a(CaPaEBR)ebr10899788 035 $a(CaONFJC)MIL632030 035 $a(OCoLC)885123043 035 $a(CaSebORM)9781118760468 035 $a(MiAaPQ)EBC1753376 035 $a(EXLCZ)993710000000205248 100 $a20140917h20142014 uy 0 101 0 $aeng 135 $aur|n|---||||| 181 $ctxt 182 $cc 183 $acr 200 10$aVertical 3D memory technologies /$fBetty Prince 205 $a1st edition 210 1$aChichester, England :$cWiley,$d2014. 210 4$dİ2014 215 $a1 online resource (371 p.) 300 $aDescription based upon print version of record. 311 $a1-118-76051-4 320 $aIncludes bibliographical references and index. 327 $aVertical 3D Memory Technologies; Contents; Acknowledgments; 1 Basic Memory Device Trends Toward the Vertical; 1.1 Overview of 3D Vertical Memory Book; 1.2 Moore's Law and Scaling; 1.3 Early RAM 3D Memory; 1.3.1 SRAM as the First 3D Memory; 1.3.2 An Early 3D Memory-The FinFET SRAM; 1.3.3 Early Progress in 3D DRAM Trench and Stack Capacitors; 1.3.4 3D as the Next Step for Embedded RAM; 1.4 Early Nonvolatile Memories Evolve to 3D; 1.4.1 NOR Flash Memory-Both Standalone and Embedded; 1.4.2 The Charge-Trapping EEPROM; 1.4.3 Thin-Film Transistor Takes Nonvolatile Memory into 3D 327 $a1.4.4 3D Microcontroller Stacks with Embedded SRAM and EEPROM1.4.5 NAND Flash Memory as an Ideal 3D Memory; 1.5 3D Cross-Point Arrays with Resistance RAM; 1.6 STT-MTJ Resistance Switches in 3D; 1.7 The Role of Emerging Memories in 3D Vertical Memories; References; 2 3D Memory Using Double-Gate, Folded, TFT, and Stacked Crystal Silicon; 2.1 Introduction; 2.2 FinFET-Early Vertical Memories; 2.2.1 Early FD-SOI FinFET Charge-Trapping Flash Memory; 2.2.2 FinFET Charge-Trapping Memory on Bulk Silicon; 2.2.3 Doubling Memory Density Using a Paired FinFET Bit-Line Structure 327 $a2.2.4 Other Folded Gate Memory Structures and Characteristics2.3 Double-Gate and Tri-Gate Flash; 2.3.1 Vertical Channel Double Floating Gate Flash Memory; 2.3.2 Early Double- and Tri-Gate FinFET Charge-Trapping Flash Memories; 2.3.3 Double-Gate Dopant-Segregated Schottky Barrier CT FinFET Flash; 2.3.4 Independent Double-Gate FinFET CT Flash Memory; 2.4 Thin-Film Transistor (TFT) Nonvolatile Memory with Polysilicon Channels; 2.4.1 Independent Double-Gate Memory with TFT and Polysilicon Channels; 2.4.2 TFT Polysilicon Channel NV Memory Using Silicon Protrusions to Enhance Performance 327 $a2.4.3 An Improved Polysilicon Channel TFT for Vertical Transistor NAND Flash2.4.4 Polysilicon TFT CT Memory with Vacuum Tunneling and Al2O3 Blocking Oxide; 2.4.5 Graphene Channel NV Memory with Al2O3-HfOx-Al2O3 Storage Layer; 2.5 Double-Gate Vertical Channel Flash Memory with Engineered Tunnel Layer; 2.5.1 Double-Gate Vertical Single-Crystal Silicon Channel with Engineered Tunnel Layer; 2.5.2 Polysilicon Substrate TFT CT NAND with Engineered Tunnel Layer; 2.5.3 Polysilicon Channel Double-Layer Stacked TFT NAND Bandgap-Engineered Flash 327 $a2.5.4 Eight-Layer 3D Vertical DG TFT NAND Flash with Junctionless Buried Channel2.5.5 Variability in Polysilicon TFT for 3D Vertical Gate NAND Flash; 2.6 Stacked Gated Twin-Bit (SGTB) CT Flash; 2.7 Crystalline Silicon and Epitaxial Stacked Layers; 2.7.1 Stacked Crystalline Silicon Layer TFT for Six-Transistor SRAM Cell Technology; 2.7.2 Stacked Silicon Layer S3 Process for Production SRAM; 2.7.3 NAND Flash Memory Development Using Double-Stacked S3 Technology; 2.7.4 4Gb NAND Flash Memory in 45 nm 3D Double-Stacked S3 Technology; References; 3 Gate-All-Around (GAA) Nanowire for Vertical Memory 327 $a3.1 Overview of GAA Nanowire Memories 330 $a The large scale integration and planar scaling of individual system chips is reaching an expensive limit. If individual chips now, and later terrabyte memory blocks, memory macros, and processing cores, can be tightly linked in optimally designed and processed small footprint vertical stacks, then performance can be increased, power reduced and cost contained. This book reviews for the electronics industry engineer, professional and student the critical areas of development for 3D vertical memory chips including: gate-all-around and junction-less nanowire memories, stacked thin film and doubl 606 $aThree-dimensional integrated circuits 606 $aSemiconductor storage devices 615 0$aThree-dimensional integrated circuits. 615 0$aSemiconductor storage devices. 676 $a621.39/732 700 $aPrince$b Betty$0462318 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910827660703321 996 $aVertical 3D memory technologies$94035935 997 $aUNINA