LEADER 02318nam 2200661 450 001 9910827469903321 005 20230809233535.0 010 $a1-119-24737-3 010 $a1-119-24736-5 010 $a1-119-24728-4 035 $a(CKB)4330000000009608 035 $a(EBL)4714034 035 $a(PQKBManifestationID)16530955 035 $a(PQKBWorkID)15050677 035 $a(PQKB)21861393 035 $a(MiAaPQ)EBC4714034 035 $a(DLC) 2016033467 035 $a(Au-PeEL)EBL4714034 035 $a(CaPaEBR)ebr11279533 035 $a(CaONFJC)MIL961920 035 $a(OCoLC)953867316 035 $a(EXLCZ)994330000000009608 100 $a20161228h20172017 uy 0 101 0 $aeng 135 $aur|n|---||||| 181 $ctxt 182 $cc 183 $acr 200 00$aPhysics and technology of crystalline oxide semiconductor CAAC-IGZO$iFundamentals /$fedited by Noboru Kimizuka, Shunpei Yamazaki 210 1$aChichester, West Sussex, England :$cWiley,$d2017. 210 4$dİ2017 215 $a1 online resource (351 p.) 225 1 $aWiley SID Series in Display Technology 300 $aIncludes index. 311 $a1-119-24740-3 320 $aIncludes bibliographical references at the end of each chapters and index. 327 $aLayered compounds in the In2O3-Ga2O3-ZnO system and related compounds in the ternary system -- Systematic view of crystalline CAAC-IGZO and other crystalline IGZO thin films -- Fundamental properties of IGZO -- CAAC-IGZO field-effect transistor -- Device application using CAAC-IGZO. 410 0$aWiley SID series in display technology. 606 $aSemiconductors$xMaterials 606 $aSemiconductors$xCharacterization 606 $aGallium compounds 606 $aZinc compounds 606 $aOxides 615 0$aSemiconductors$xMaterials. 615 0$aSemiconductors$xCharacterization. 615 0$aGallium compounds. 615 0$aZinc compounds. 615 0$aOxides. 676 $a621.38152 702 $aKimizuku$b Noboru$f1940- 702 $aYamazaki$b Shunpei$f1942- 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910827469903321 996 $aPhysics and technology of crystalline oxide semiconductor CAAC-IGZO$93934672 997 $aUNINA