LEADER 05770nam 2200769Ia 450 001 9910825297303321 005 20200520144314.0 010 $a9786613620637 010 $a9781119966869 010 $a1119966868 010 $a9781119963677 010 $a1119963672 010 $a9781280590801 010 $a1280590807 010 $a9781119963240 010 $a1119963249 035 $a(CKB)2670000000151527 035 $a(EBL)865036 035 $a(OCoLC)778448543 035 $a(SSID)ssj0000611242 035 $a(PQKBManifestationID)11368389 035 $a(PQKBTitleCode)TC0000611242 035 $a(PQKBWorkID)10646642 035 $a(PQKB)10604432 035 $a(MiAaPQ)EBC865036 035 $a(Au-PeEL)EBL865036 035 $a(CaPaEBR)ebr10538596 035 $a(CaONFJC)MIL362063 035 $a(Perlego)1000805 035 $a(EXLCZ)992670000000151527 100 $a20111020d2012 uy 0 101 0 $aeng 135 $aur|n|---||||| 181 $ctxt 182 $cc 183 $acr 200 00$aAdvanced interconnects for ULSI technology /$fedited by Mikhail Baklanov, Paul S. Ho and Ehrenfried Zschech 205 $a2nd ed. 210 $aChichester, West Susex $cWiley$d2012 215 $a1 online resource (615 p.) 300 $aDescription based upon print version of record. 311 08$a9780470662540 311 08$a0470662549 320 $aIncludes bibliographical references and index. 327 $aAdvanced Interconnects for ULSI Technology; Contents; About the Editors; List of Contributors; Preface; Abbreviations; Section I Low-k Materials; 1 Low-k Materials: Recent Advances; 1.1 Introduction; 1.2 Integration Challenges; 1.2.1 Process-Induced Damage; 1.2.2 Mechanical Properties; 1.3 Processing Approaches to Existing Integration Issues; 1.3.1 Post-deposition Treatments; 1.3.2 Prevention or Repair of Plasma-Induced Processing Damage; 1.3.3 Multilayer Structures; 1.4 Material Advances to Overcome Current Limitations; 1.4.1 Silica Zeolites; 1.4.2 Hybrid Organic-Inorganic: Oxycarbosilanes 327 $a1.5 ConclusionReferences; 2 Ultra-Low-k by CVD: Deposition and Curing; 2.1 Introduction; 2.2 Porogen Approach by PECVD; 2.2.1 Precursors and Deposition Conditions; 2.2.2 Mystery Still Unsolved: From Porogens to Pores; 2.3 UV Curing; 2.3.1 General Overview of Curing; 2.3.2 UV Curing Mechanisms; 2.4 Impact of Curing on Structure and Physical Properties: Benefits of UV Curing; 2.4.1 Porosity; 2.4.2 Chemical Structure and Mechanical Properties; 2.4.3 Electrical Properties; 2.5 Limit/Issues with the Porogen Approach; 2.5.1 Porosity Creation Limit; 2.5.2 Porogen Residues; 2.6 Future of CVD Low-k 327 $a2.6.1 New Matrix Precursor2.6.2 Other Deposition Strategies; 2.6.3 New Deposition Techniques; 2.7 Material Engineering: Adaptation to Integration Schemes; 2.8 Conclusion; References; 3 Plasma Processing of Low-k Dielectrics; 3.1 Introduction; 3.2 Materials and Equipment; 3.3 Process Results Characterization; 3.4 Interaction of Low-k Dielectrics with Plasma; 3.4.1 Low-k Etch Chemistries; 3.4.2 Patterning Strategies and Masking Materials; 3.4.3 Etch Mechanisms; 3.5 Mechanisms of Plasma Damage; 3.5.1 Gap Structure Studies; 3.5.2 Effect of Radical Density; 3.5.3 Effect of Ion Energy 327 $a3.5.4 Effect of Photon Energy and Intensity3.5.5 Plasma Damage by Oxidative Radicals; 3.5.6 Hydrogen-Based Plasma; 3.5.7 Minimization of Plasma Damage; 3.6 Dielectric Recovery; 3.6.1 CH4 Beam Treatment; 3.6.2 Dielectric Recovery by Silylation; 3.6.3 UV Radiation; 3.7 Conclusions; References; 4 Wet Clean Applications in Porous Low-k Patterning Processes; 4.1 Introduction; 4.2 Silica and Porous Hybrid Dielectric Materials; 4.3 Impact of Plasma and Subsequent Wet Clean Processes on the Stability of Porous Low-k Dielectrics; 4.3.1 Stability in Pure Chemical Solutions 327 $a4.3.2 Stability in Commercial Chemistries4.3.3 Hydrophobicity of Hybrid Low-k Materials; 4.4 Removal of Post-Etch Residues and Copper Surface Cleaning; 4.5 Plasma Modification and Removal of Post-Etch 193 nm Photoresist; 4.5.1 Modification of 193 nm Photoresist by Plasma Etch; 4.5.2 Wet Removal of 193 nm Photoresist; Acknowledgments; References; Section II Conductive Layers and Barriers; 5 Copper Electroplating for On-Chip Metallization; 5.1 Introduction; 5.2 Copper Electroplating Techniques; 5.3 Copper Electroplating Superfill; 5.3.1 The Role of Accelerator; 5.3.2 The Role of Suppressor 327 $a5.3.3 The Role of Leveler 330 $aFinding new materials for copper/low-k interconnects is critical to the continuing development of computer chips. While copper/low-k interconnects have served well, allowing for the creation of Ultra Large Scale Integration (ULSI) devices which combine over a billion transistors onto a single chip, the increased resistance and RC-delay at the smaller scale has become a significant factor affecting chip performance. Advanced Interconnects for ULSI Technology is dedicated to the materials and methods which might be suitable replacements. It covers a broad range of topics, from physical 606 $aIntegrated circuits$xUltra large scale integration 606 $aInterconnects (Integrated circuit technology) 615 0$aIntegrated circuits$xUltra large scale integration. 615 0$aInterconnects (Integrated circuit technology) 676 $a621.39/5 686 $aTEC008050$2bisacsh 701 $aBaklanov$b Mikhail$01628643 701 $aHo$b P. S$01676329 701 $aZschech$b Ehrenfried$0950028 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910825297303321 996 $aAdvanced interconnects for ULSI technology$94042447 997 $aUNINA