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100   $a20110308d2010      uy         0
101 0 $aeng
135   $aur|n|---|||||
181   $ctxt
182   $cc
183   $acr
200 10$aElectromigration in ULSI interconnections /$fCher Ming Tan
205   $a1st ed.
210   $aHackensack, N.J. $cWorld Scientific$dc2010
215   $a1 online resource (312 p.)
225 1 $aInternational series on advances in solid state electronics and technology (ASSET)
300   $aDescription based upon print version of record.
311   $a981-4273-32-5 
320   $aIncludes bibliographical references and index.
327   $aPreface; Contents; 1. Introduction; 2. History of Electromigration; 3. Experimental Studies of Al Interconnections; 4. Experimental Studies of Cu Interconnections; 5. Numerical Modeling of Electromigration; 6. Future Challenges; Index; Biography
330   $a""Electromigration in ULSI Interconnections"" provides a comprehensive description of the electro migration in integrated circuits. It is intended for both beginner and advanced readers on electro migration in ULSI interconnections. It begins with the basic knowledge required for a detailed study on electro migration, and examines the various interconnected systems and their evolution employed in integrated circuit technology. The subsequent chapters provide a detailed description of the physics of electro migration in both Al- and Cu-based Interconnections, in the form of theoretical, experim
410  0$aInternational series on advances in solid state electronics and technology.
606   $aIntegrated circuits$xUltra large scale integration
606   $aElectrodiffusion
615  0$aIntegrated circuits$xUltra large scale integration.
615  0$aElectrodiffusion.
676   $a621.395
700   $aTan$b Cher Ming$f1959-$01702034
801  0$bMiAaPQ
801  1$bMiAaPQ
801  2$bMiAaPQ
906   $aBOOK
912   $a9910822511903321
996   $aElectromigration in ULSI interconnections$94086254
997   $aUNINA