LEADER 02001nam 2200445 450 001 9910822454603321 005 20230803211655.0 010 $a3-8325-9666-6 035 $a(CKB)4340000000242940 035 $a(MiAaPQ)EBC5223913 035 $a(Au-PeEL)EBL5223913 035 $a(CaPaEBR)ebr11539620 035 $a(OCoLC)1021809289 035 $a58a1c68a-1ff0-4d36-a021-3edeb0dd2d03 035 $a(EXLCZ)994340000000242940 100 $a20180524d2014 uy 0 101 0 $aeng 135 $aurcnu|||||||| 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 10$aLeakage current and defect characterization of short channel MOSFETs /$fGuntrade Roll 210 1$aBerlin :$cLogos Verlag Berlin,$d[2014] 210 4$dİ2014 215 $a1 online resource (242 pages) 225 0 $aResearch at NaMLab ;$v2 300 $aPublicationDate: 20121130 311 $a3-8325-3261-7 330 $aLong description: The continuous improvement in semiconductor technology requires field effect transistor scaling while maintaining acceptable leakage currents. This study analyzes the effect of scaling on the leakage current and defect distribution in peripheral DRAM transistors. The influence of important process changes, such as the high-k gate patterning and encapsulation as well as carbon co-implants in the source/drain junction are investigated by advanced electrical measurements and TCAD simulation. A complete model for the trap assisted leakage currents in the silicon bulk of the transistors is presented. 606 $aMetal oxide semiconductor field-effect transistors 615 0$aMetal oxide semiconductor field-effect transistors. 676 $a621.3815284 700 $aRoll$b Guntrade$01601878 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910822454603321 996 $aLeakage current and defect characterization of short channel MOSFETs$93925661 997 $aUNINA