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100   $a20061005d2005      uy         0
101 0 $aeng
135   $aurcn|||||||||
181   $ctxt
182   $cc
183   $acr
200 10$aSilicon carbide power devices /$fB. Jayant Baliga
205   $a1st ed.
210   $aNew Jersey $cWorld Scientific$dc2005
215   $a1 online resource (xxi, 503 p. )$cill. (some col.)
300   $aBibliographic Level Mode of Issuance: Monograph
311   $a981-256-605-8 
320   $aIncludes bibliographical references and index.
327   $ach. 1. Introduction -- ch. 2. Material properties and technology -- ch. 3. Breakdown voltage -- ch. 4. PiN rectifiers -- ch. 5. Schottky rectifiers -- ch. 6. Shielded Schottky rectifiers -- ch. 7. Metal-semiconductor field effect transistors -- ch. 8. The Baliga-pair configuration -- ch. 9. Planar power MOSFETs -- ch. 10. Shielded planar MOSFETs -- ch. 11. Trench-gate power MOSFETs -- ch. 12. Shielded trench-gate power MOSFETs -- ch. 13. Charge coupled structures -- ch. 14. Integral diodes -- ch. 15. Lateral high voltage FETs -- ch. 16. Synopsis.
606   $aSilicon carbide$xElectric properties
606   $aSemiconductors
615  0$aSilicon carbide$xElectric properties.
615  0$aSemiconductors.
676   $a621.3815/2
700   $aBaliga$b B. Jayant$f1948-$07722
801  0$bMiAaPQ
801  1$bMiAaPQ
801  2$bMiAaPQ
906   $aBOOK
912   $a9910821665003321
996   $aSilicon carbide power devices$93939211
997   $aUNINA