LEADER 04655nam 2200649 450 001 9910819526203321 005 20200520144314.0 010 $a1-119-06918-1 010 $a1-119-06917-3 010 $a1-119-06922-X 035 $a(CKB)4330000000008296 035 $a(EBL)4661483 035 $a(DLC) 2016025093 035 $a(Au-PeEL)EBL4661483 035 $a(CaPaEBR)ebr11252973 035 $a(CaONFJC)MIL952650 035 $a(OCoLC)950902105 035 $a(CaSebORM)9781119069119 035 $a(MiAaPQ)EBC4661483 035 $a(PPN)267308876 035 $a(EXLCZ)994330000000008296 100 $a20160915h20162016 uy 0 101 0 $aeng 135 $aur|n|---||||| 181 $2rdacontent 182 $2rdamedia 183 $2rdacarrier 200 00$aFuture trends in microelectronics $eJourney into the unknown /$fedited by Serge Luryi, Jimmy Xu, Alexander Zaslavsky 210 1$aHoboken, New Jersey :$cIEEE Press :$cWiley,$d2016. 210 4$dİ2016 215 $a1 online resource (383 p.) 300 $aDescription based upon print version of record. 311 $a1-119-06911-4 320 $aIncludes bibliographical references at the end of each chapters and index. 327 $aCover ; Title Page ; Copyright ; Contents ; List of Contributors ; Preface ; Acknowledgments ; Part I Future of Digital Silicon; 1.1 Prospects of Future Si Technologies in the Data-Driven World; 1. Introduction ; 2. Memory - DRAM ; 3. Memory - NAND ; 4. Logic technology ; 5. CMOS image sensors ; 6. Packaging technology 327 $a7. Silicon photonics technology 8. Concluding remarks ; Acknowledgments ; References ; 1.2 How Lithography Enables Moore's Law; 1. Introduction ; 2. Moore's Law and the contribution of lithography ; 3. Lithography technology: past and present ; 4. Lithography technology: future ; 5. Summary 327 $a6. Conclusion Acknowledgments ; References ; 1.3 What Happened to Post-CMOS?; 1. Introduction ; 2. General constraints on speed and energy ; 3. Guidelines for success ; 4. Benchmarking and examples ; 5. Discussion ; 6. Conclusion ; Acknowledgments ; References 327 $a1.4 Three-Dimensional Integration of Ge and Two-Dimensional Materials for One-Dimensional Devices1. Introduction ; 2. FEOL technology and materials for 3D integration ; 3. Integration of ""more than Moore"" functionality ; 4. Implications of 3D integration at the system level ; 5. Conclusion ; Acknowledgments ; References 327 $a1.5 Challenges to Ultralow-Power Semiconductor Device Operation1. Introduction ; 2. Ultimate MOS transistors ; 3. Small slope switches ; 4. Conclusion ; Acknowledgments ; References ; 1.6 A Universal Nonvolatile Processing Environment; 1. Introduction ; 2. Universal nonvolatile processing environment 327 $a3. Bias-field-free spin-torque oscillator 606 $aMicroelectronics$xTechnological innovations 606 $aNanotechnology$xTechnological innovations 606 $aSemiconductors$xTechnological innovations 615 0$aMicroelectronics$xTechnological innovations. 615 0$aNanotechnology$xTechnological innovations. 615 0$aSemiconductors$xTechnological innovations. 676 $a621.381 702 $aLuryi$b Serge 702 $aXu$b Jimmy 702 $aZaslavsky$b Alex$f1963- 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910819526203321 996 $aFuture trends in microelectronics$94105800 997 $aUNINA