LEADER 03251oam 2200637I 450 001 9910819030303321 005 20240405084046.0 010 $a0-429-06944-8 010 $a981-4613-20-7 024 7 $a10.1201/b18094 035 $a(CKB)2670000000560410 035 $a(EBL)1811798 035 $a(SSID)ssj0001467790 035 $a(PQKBManifestationID)11794964 035 $a(PQKBTitleCode)TC0001467790 035 $a(PQKBWorkID)11521419 035 $a(PQKB)11724596 035 $a(MiAaPQ)EBC1811798 035 $a(OCoLC)910542798 035 $a(OCoLC)903644100 035 $a(OCoLC-P)903644100 035 $a(CaSebORM)9789814613194 035 $a(EXLCZ)992670000000560410 100 $a20180331h20152015 uy 0 101 0 $aeng 135 $aur|n|---||||| 181 $ctxt 182 $cc 183 $acr 200 00$aData storage at the nanoscale $eadvances and applications /$fedited by Gan Fuxi, Wang Yang 205 $a1st ed. 210 1$aBoca Raton, Florida :$cCRC Press :$cTaylor & Francis Group,$d[2015] 210 4$dİ2015 215 $a1 online resource (730 p.) 300 $aDescription based upon print version of record. 311 $a1-322-99909-0 311 $a981-4613-19-3 320 $aIncludes bibliographical references at the end of each chapters. 327 $aFront Cover; Contents; Preface; Chapter 1: Overview of Information Data Storage: An Introduction; Chapter 2: Super-Resolution Optical Data Storage Using Binary Optics; Chapter 3: Focal Spot Engineering for Bit-by-Bit Recording; Chapter 4: Plasmonic Nanofocusing and Data Storage; Chapter 5: Nano-Optical Data Storage with Nonlinear Super-Resolution Thin Films; Chapter 6: Mastering Technology for High-Density Optical Disc; Chapter 7: Laser-Induced Phase Transition and Its Application in Nano-Optical Storage; Chapter 8: SPIN-Based Optical Data Storage; Chapter 9: Magnetic Random Access Memory 327 $aChapter 10: RRAM Device and CircuitChapter 11: Phase-Change Random Access Memory; Chapter 12: Nano-DRAM Technology for Data Storage Application; Chapter 13: Ferroelectric Memory; Chapter 14: Nanomagnetic and Hybrid Information Storage; Back Cover 330 $aIn the big data era, data storage is one of the cores of the information chain from production to processing, sharing, and application. To promote and develop information technology, performance of data storage devices and systems should be increased. The recording density of memories has largely increased in recent years because of the rapid development of nanotechnology. A minimum feature size of optical, magnetic, and electrical memories is already at the nanometer scale. This book compiles the cutting-edge research progresses of nanometer-scale data storage by several famous Chinese scient 606 $aComputer storage devices 606 $aNanotechnology 606 $aDatabases 615 0$aComputer storage devices. 615 0$aNanotechnology. 615 0$aDatabases. 676 $a669.1092369 702 $aGan$b Fuxi 702 $aYang$b Wang 801 0$bFlBoTFG 801 1$bFlBoTFG 906 $aBOOK 912 $a9910819030303321 996 $aData storage at the nanoscale$93948353 997 $aUNINA