LEADER 02721nam 22004333 450 001 9910817129403321 005 20230629230839.0 010 $a1-63081-869-0 035 $a(CKB)5150000000654806 035 $a(MiAaPQ)EBC6877367 035 $a(Au-PeEL)EBL6877367 035 $a(EXLCZ)995150000000654806 100 $a20220207d2021 uy 0 101 0 $aeng 135 $aurcnu|||||||| 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 10$aNonlinear Design $eFETs and HEMTs 210 1$aNorwood :$cArtech House,$d2021. 210 4$dİ2021. 215 $a1 online resource (373 pages) 330 $aDespite its continuing popularity, the so-called standard circuit model of compound semiconductor field-effect transistors (FETs) and high electron mobility transistors (HEMTs) is shown to have a limitation for nonlinear analysis and design: it is valid only in the static limit. When the voltages and currents are time-varying, as they must be for these devices to have any practical use, the model progressively fails for higher specification circuits. This book shows how to reform the standard model to render it fully compliant with the way FETs and HEMTs actually function, thus rendering it valid dynamically. Proof-of-principle is demonstrated for several practical circuits, including a frequency doubler and amplifiers with demanding performance criteria. Methods for extracting both the reformulated model and the standard model are described, including a scheme for re-constructing from S-parameters the bias-dependent dynamic (or RF) I(V) characteristics along which devices work in real-world applications, and as needed for the design of nonlinear circuits using harmonic-balance and time-domain simulators. The book includes a historical review of how variations on the standard model theme evolved, leading up to one of the most widely used--the Angelov (or Chalmers) model. 517 $aNonlinear Design 606 $aField-effect transistors$xDesign and construction 606 $aModulation-doped field-effect transistors$xDesign and construction 606 $aModulation-doped field-effect transistors$xDesign and construction$2fast$3(OCoLC)fst01024517 615 0$aField-effect transistors$xDesign and construction. 615 0$aModulation-doped field-effect transistors$xDesign and construction. 615 7$aModulation-doped field-effect transistors$xDesign and construction. 676 $a621.3815/284 700 $aLadbrooke$b Peter H$01684584 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910817129403321 996 $aNonlinear Design$94056172 997 $aUNINA