LEADER 01050nam0-22003011i-450- 001 990002026280403321 005 20080417104343.0 035 $a000202628 035 $aFED01000202628 035 $a(Aleph)000202628FED01 035 $a000202628 100 $a20030910d1991----km-y0itay50------ba 101 0 $aita 200 1 $aLotta biologica$eM.A.F. convegno "Lotta biologica"$eatti del convegno$fcoord. Gennaro Viggiani 210 $aRoma$cIstituto sperimentale patologia vegetale$d1991 215 $a189 p.$d24 cm 300 $aIn testa al front.: Progetto finalizzato di ricerca. Lotta biologica e integrata per la difesa delle colture agrarie e delle piante forestali 610 0 $aLotta biologica$aCongressi 676 $a632.96 702 1$aViggiani,$bGennaro 710 12$aConvegno lotta biologica$f<1991 ;$eAcireale>$0360289 801 0$aIT$bUNINA$gRICA$2UNIMARC 901 $aBK 912 $a990002026280403321 952 $a61 VI D.8/24$b4588 (31/03/94)$fDAGEN 959 $aDAGEN 996 $aLotta biologica$9404750 997 $aUNINA LEADER 05786nam 2200817Ia 450 001 9910817124503321 005 20200520144314.0 010 $a9786612237133 010 $a9781282237131 010 $a1282237136 010 $a9780470747254 010 $a0470747250 010 $a9780470747261 010 $a0470747269 035 $a(CKB)1000000000790799 035 $a(EBL)454456 035 $a(OCoLC)609844472 035 $a(SSID)ssj0000354173 035 $a(PQKBManifestationID)11245279 035 $a(PQKBTitleCode)TC0000354173 035 $a(PQKBWorkID)10302307 035 $a(PQKB)11345392 035 $a(MiAaPQ)EBC454456 035 $a(Au-PeEL)EBL454456 035 $a(CaPaEBR)ebr10317806 035 $a(CaONFJC)MIL223713 035 $a(Perlego)2759113 035 $a(EXLCZ)991000000000790799 100 $a20090423d2009 uy 0 101 0 $aeng 135 $aurcn||||||||| 181 $ctxt 182 $cc 183 $acr 200 10$aESD $efailure mechanisms and models /$fSteven H. Voldman 205 $a1st ed. 210 $aChichester, West Sussex, U.K. ;$aHoboken, NJ $cJ. Wiley$d2009 215 $a1 online resource (410 p.) 300 $aDescription based upon print version of record. 311 08$a9780470511374 311 08$a0470511370 320 $aIncludes bibliographical references and index. 327 $aESD Failure Mechanisms and Models; Contents; About the Author; Preface; Acknowledgments; 1 Failure Analysis and ESD; 1.1 INTRODUCTION; 1.1.1 FA Techniques for Evaluation of ESD Events; 1.1.2 Fundamental Concepts of ESD FA Methods and Practices; 1.1.3 ESD Failure: Why Do Semiconductor Chips Fail?; 1.1.4 How to Use FA to Design ESD Robust Technologies; 1.1.5 How to Use FA to Design ESD Robust Circuits; 1.1.6 How to Use FA for Temperature Prediction; 1.1.7 How to Use Failure Models for Power Prediction; 1.1.8 FA Methods, Design Rules, and ESD Ground Rules 327 $a1.1.9 FA and Semiconductor Process-Induced ESD Design Asymmetry 1.1.10 FA Methodology and Electro-thermal Simulation; 1.1.11 FA and ESD Testing Methodology; 1.1.12 FA Methodology for Evaluation of ESD Parasitics; 1.1.13 FA Methods and ESD Device Operation Verification; 1.1.14 FA Methodology to Evaluate Inter-power Rail Electrical Connectivity; 1.1.15 How to Use FA to Eliminate Failure Mechanisms; 1.2 ESD FAILURE: HOW DO MICRO-ELECTRONIC DEVICES FAIL?; 1.2.1 ESD Failure: How Do Metallurgical Junctions Fail?; 1.2.2 ESD Failure: How Do Insulators Fail?; 1.2.3 ESD Failure: How Do Metals Fail? 327 $a1.3 SENSITIVITY OF SEMICONDUCTOR COMPONENTS 1.3.1 ESD Sensitivity as a Function of Materials; 1.3.2 ESD Sensitivity as a Function of Semiconductor Devices; 1.3.3 ESD Sensitivity as a Function of Product Type; 1.3.4 ESD and Technology Scaling; 1.3.5 ESD Technology Roadmap; 1.4 HOW DO SEMICONDUCTOR CHIPS FAIL--ARE THE FAILURES RANDOM OR SYSTEMATIC?; 1.5 CLOSING COMMENTS AND SUMMARY; PROBLEMS; REFERENCES; 2 Failure Analysis Tools, Models, and Physics of Failure; 2.1 FA TECHNIQUES FOR EVALUATION OF ESD EVENTS; 2.2 FA TOOLS; 2.2.1 Optical Microscope; 2.2.2 Scanning Electron Microscope 327 $a2.2.3 Transmission Electron Microscope 2.2.4 Emission Microscope; 2.2.5 Thermally Induced Voltage Alteration; 2.2.6 Superconducting Quantum Interference Device Microscope; 2.2.7 Atomic Force Microscope; 2.2.8 The 2-D AFM; 2.2.9 Picosecond Current Analysis Tool; 2.2.10 Transmission Line Pulse--Pico second Current Analysis Tool; 2.3 ESD SIMULATION: ESD PULSE MODELS; 2.3.1 Human Body Model; 2.3.2 Machine Model; 2.3.3 Cassette Model; 2.3.4 Socketed Device Model; 2.3.5 Charged Board Model; 2.3.6 Cable Discharge Event; 2.3.7 IEC System-Level Pulse Model; 2.3.8 Human Metal Model 327 $a2.3.9 Transmission Line Pulse Testing 2.3.10 Very Fast Transmission Line Pulse (VF-TLP) Model; 2.3.11 Ultra-fast Transmission Line Pulse (UF-TLP) Model; 2.4 ELECTRO-THERMAL PHYSICAL MODELS; 2.4.1 Tasca Model; 2.4.2 Wunsch-Bell Model; 2.4.3 Smith-Littau Model; 2.4.4 Ash Model; 2.4.5 Arkihpov, Astvatsaturyan, Godovosyn, and Rudenko Model; 2.4.6 Dwyer, Franklin, and Campbell Model; 2.4.7 Vlasov-Sinkevitch Model; 2.5 STATISTICAL MODELS FOR ESD PREDICTION; 2.6 CLOSING COMMENTS AND SUMMARY; PROBLEMS; REFERENCES; 3 CMOS Failure Mechanisms; 3.1 TABLES OF CMOS ESD FAILURE MECHANISMS 327 $a3.2 LOCOS ISOLATION-DEFINED CMOS 330 $aElectrostatic discharge (ESD) failure mechanisms continue to impact semiconductor components and systems as technologies scale from micro- to nano-electronics. This book studies electrical overstress, ESD, and latchup from a failure analysis and case-study approach. It provides a clear insight into the physics of failure from a generalist perspective, followed by investigation of failure mechanisms in specific technologies, circuits, and systems. The book is unique in covering both the failure mechanism and the practical solutions to fix the problem from either a technology or circuit method 517 3 $aElectrostatic discharge 606 $aSemiconductors$xFailures 606 $aIntegrated circuits$xProtection 606 $aIntegrated circuits$xTesting 606 $aIntegrated circuits$xReliability 606 $aElectric discharges 606 $aElectrostatics 615 0$aSemiconductors$xFailures. 615 0$aIntegrated circuits$xProtection. 615 0$aIntegrated circuits$xTesting. 615 0$aIntegrated circuits$xReliability. 615 0$aElectric discharges. 615 0$aElectrostatics. 676 $a621.381 700 $aVoldman$b Steven H$0872423 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910817124503321 996 $aESD$91958013 997 $aUNINA