LEADER 03566nam 2200661Ia 450 001 9910814896703321 005 20200520144314.0 010 $a1-281-12124-X 010 $a9786611121242 010 $a981-270-685-2 035 $a(CKB)1000000000334173 035 $a(EBL)312269 035 $a(OCoLC)476099323 035 $a(SSID)ssj0000948680 035 $a(PQKBManifestationID)11484554 035 $a(PQKBTitleCode)TC0000948680 035 $a(PQKBWorkID)10951193 035 $a(PQKB)11348985 035 $a(MiAaPQ)EBC312269 035 $a(WSP)00006311 035 $a(Au-PeEL)EBL312269 035 $a(CaPaEBR)ebr10188789 035 $a(CaONFJC)MIL112124 035 $a(EXLCZ)991000000000334173 100 $a20060911d2007 uy 0 101 0 $aeng 135 $aur|n|---||||| 181 $ctxt 182 $cc 183 $acr 200 00$aSiC materials and devices /$fedited by Michael Shur, Sergey Rumyantsev, Michael Levinshtein 205 $a1st ed. 210 $aNew Jersey ;$aLondon $cWorld Scientific$d2007 215 $a1 online resource (143 p.) 225 1 $aSelected topics in electronics and systems ;$v43 225 0 $aSiC materials and devices ;$v2 300 $aDescription based upon print version of record. 311 $a981-270-383-7 320 $aIncludes bibliographical references. 327 $aPreface; CONTENTS; Growth of Sic Substrates A. Powell, J. Jenny, S. Muller, H. Mcd. Hobgood, V. Tsvetkov, R. Lenoard and C. Carter, Jr.; 1. Introduction; 2. Sic Bulk Growth; 3. Crystal Orientation; 4. Crystal Diameter Enlargement; 5. Substrate Defects; 6. Doping in SIC; 7. Sic Substrates for Microwave Devices; 8. Wafering and Polish; 9. Substrate Cost; 10. Conclusions; Acknowledgments; References; Deep Level Defects in Silicon Carbide A. A. Lebedev; 1. Introduction; 2. Parameters of Deep Centers in Sic; 3. Influence of Impurities on the Growth of Epitaxial Sic Layers 327 $a4. Deep Centers and Recombination Processes in Sic5. Conclusion; Acknowledgements; References; Silicon Carbide Junction Field Effect Transistors D. Stephani and P. Friedrichs; 1. Introduction; 2. Lateral SiC-JFETs; 3. The Vertical JFET (VJFET); References; Sic BJTs T. P. Chow and A. K. Agarwal; 1. Introduction; 2, Figures of Merit; 3. Power Bipolar Transistors; 4. Commercialization Challenges; References 330 $aSilicon carbide is known to have been investigated since 1907 when Captain H J Round demonstrated yellow and blue emission by applying bias between a metal needle and an SiC crystal. The potential of using SiC in semiconductor electronics was already recognized half a century ago. Despite its well-known properties, it has taken a few decades to overcome the exceptional technological difficulties of getting silicon carbide material to reach device quality and travel the road from basic research to commercialization. This second of two volumes reviews four important additional areas: the growth 410 0$aSelected topics in electronics and systems ;$vv. 40. 606 $aSilicon carbide$xElectric properties 606 $aSemiconductors 615 0$aSilicon carbide$xElectric properties. 615 0$aSemiconductors. 676 $a621.38152 701 $aShur$b Michael$0770441 701 $aRumyantsev$b Sergey$01753574 701 $aLevinshtein$b M. E$g(Mikhail Efimovich)$00 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910814896703321 996 $aSiC materials and devices$94189478 997 $aUNINA