LEADER 05317nam 22006371a 450 001 9910831054003321 005 20230721023400.0 010 $a1-282-36840-0 010 $a9786612368400 010 $a0-470-46234-5 010 $a0-470-46231-0 035 $a(CKB)1000000000822051 035 $a(EBL)469205 035 $a(OCoLC)536092917 035 $a(SSID)ssj0000297114 035 $a(PQKBManifestationID)11267250 035 $a(PQKBTitleCode)TC0000297114 035 $a(PQKBWorkID)10333467 035 $a(PQKB)10770950 035 $a(MiAaPQ)EBC469205 035 $a(EXLCZ)991000000000822051 100 $a20081126d2009 uy 0 101 0 $aeng 135 $aur|n|---||||| 181 $ctxt 182 $cc 183 $acr 200 10$aFundamentals of RF and microwave transistor amplifiers$b[electronic resource] /$fInder Bahl 210 $aOxford $cWiley$d2009 215 $a1 online resource (697 p.) 300 $aDescription based upon print version of record. 311 $a0-470-39166-9 320 $aIncludes bibliographical references and index. 327 $aFundamentals of RF and Microwave Transistor Amplifiers; Contents in Brief; Contents; Foreword; Preface; 1. Introduction; 1.1. Transistor Amplifier; 1.2. Early History of Transistor Amplifiers; 1.3. Benefits of Transistor Amplifiers; 1.4. Transistors; 1.5. Design of Amplifiers; 1.6. Amplifier Manufacturing Technologies; 1.7. Applications of Amplifiers; 1.8. Amplifier Cost; 1.9. Current Trends; 1.10. Book Organization; References; 2. Linear Network Analysis; 2.1. Impedance Matrix; 2.2. Admittance Matrix; 2.3. ABCD Parameters; 2.4. S-Parameters; 2.4.1. S-Parameters for a One-Port Network 327 $a2.5. Relationships Between Various Two-Port ParametersReferences; Problems; 3. Amplifier Characteristics and Definitions; 3.1. Bandwidth; 3.2. Power Gain; 3.3. Input and Output VSWR; 3.4. Output Power; 3.5. Power Added Efficiency; 3.6. Intermodulation Distortion; 3.6.1. IP3; 3.6.2. ACPR; 3.6.3. EVM; 3.7. Harmonic Power; 3.8. Peak-to-Average Ratio; 3.9. Combiner Efficiency; 3.10. Noise Characterization; 3.10.1. Noise Figure; 3.10.2. Noise Temperature; 3.10.3. Noise Bandwidth; 3.10.4. Optimum Noise Match; 3.10.5. Constant Noise Figure and Gain Circles; 3.10.6. Simultaneous Input and Noise Match 327 $a3.11. Dynamic Range3.12. Multistage Amplifier Characteristics; 3.12.1. Multistage IP3; 3.12.2. Multistage PAE; 3.12.3. Multistage NF; 3.13. Gate and Drain Pushing Factors; 3.14. Amplifier Temperature Coefficient; 3.15. Mean Time to Failure; References; Problems; 4. Transistors; 4.1. Transistor Types; 4.2. Silicon Bipolar Transistor; 4.2.1. Figure of Merit; 4.2.2. High-Frequency Noise Performance of Silicon BJT; 4.2.3. Power Performance; 4.3. GaAs MESFET; 4.3.1. Small-Signal Equivalent Circuit; 4.3.2. Figure of Merit; 4.3.3. High-Frequency Noise Properties of MESFETs 327 $a4.4. Heterojunction Field Effect Transistor4.4.1. High-Frequency Noise Properties of HEMTs; 4.4.2. Indium Phosphide pHEMTs; 4.5. Heterojunction Bipolar Transistors; 4.5.1. High-Frequency Noise Properties of HBTs; 4.5.2. SiGe Heterojunction Bipolar Transistors; 4.6. MOSFET; References; Problems; 5. Transistor Models; 5.1. Transistor Model Types; 5.1.1. Physics/Electromagnetic Theory Based Models; 5.1.2. Analytical or Hybrid Models; 5.1.3. Measurement Based Models; 5.2. MESFET Models; 5.2.1. Linear Models; 5.2.2. Nonlinear Models; 5.3. pHEMT Models; 5.3.1. Linear Models; 5.3.2. Nonlinear Models 327 $a5.4. HBT Model5.5. MOSFET Models; 5.6. BJT Models; 5.7. Transistor Model Scaling; 5.8. Source-Pull and Load-Pull Data; 5.8.1. Theoretical Load-Pull Data; 5.8.2. Measured Power and PAE Source Pull and Load Pull; 5.8.3. Measured IP3 Source and Load Impedance; 5.8.4. Source and Load Impedance Scaling; 5.9. Temperature-Dependent Models; References; Problems; 6. Matching Network Components; 6.1. Impedance Matching Elements; 6.2. Transmission Line Matching Elements; 6.2.1. Microstrip; 6.2.2. Coplanar Lines; 6.3. Lumped Elements; 6.3.1. Capacitors; 6.3.2. Inductors; 6.3.3. Resistors 327 $a6.4. Bond Wire Inductors 330 $aA Comprehensive and Up-to-Date Treatment of RF and Microwave Transistor Amplifiers This book provides state-of-the-art coverage of RF and microwave transistor amplifiers, including low-noise, narrowband, broadband, linear, high-power, high-efficiency, and high-voltage. Topics covered include modeling, analysis, design, packaging, and thermal and fabrication considerations. Through a unique integration of theory and practice, readers will learn to solve amplifier-related design problems ranging from matching networks to biasing and stability. More than 240 problems are included to help read 606 $aAmplifiers, Radio frequency 606 $aMicrowave amplifiers 606 $aTransistor amplifiers 615 0$aAmplifiers, Radio frequency. 615 0$aMicrowave amplifiers. 615 0$aTransistor amplifiers. 676 $a621.3815/35 676 $a621.381535 700 $aBahl$b I. J$0874089 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910831054003321 996 $aFundamentals of RF and microwave transistor amplifiers$94028040 997 $aUNINA LEADER 02134nam 2200409 450 001 9910812434603321 005 20230126220306.0 010 $a1-5275-2044-7 035 $a(CKB)4100000007121617 035 $a(MiAaPQ)EBC5568648 035 $a(Au-PeEL)EBL5568648 035 $a(OCoLC)1061037682 035 $a(EXLCZ)994100000007121617 100 $a20220526d2018 uy 0 101 0 $aeng 135 $aurcnu|||||||| 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 10$aAbortion is the "A" word /$fby Carmen M. Cusack 210 1$aNewcastle-upon-Tyne, England :$cCambridge Scholars Publishing,$d[2018] 210 4$dİ2018 215 $a1 online resource (xiii, 215 pages) 311 $a1-5275-1611-3 327 $aIntro -- Table of Contents -- Acknowledgements -- List of Figures -- Introduction -- Chapter One -- Chapter Two -- Chapter Three -- Chapter Four -- Chapter Five -- Chapter Six -- Chapter Seven -- Conclusion -- References. 330 $aThis book will serve to persuade students, educators, politicians, lawmakers, and community leaders in the debate on abortion. It will emancipate the reader from mundane and restrictive analyses, such as those lobbed by courts, legislatures, and mass media. It scathes routine constrictions and liberates fresh thoughts on specialized topics, including choice, penance, and parenthood. The book offers powerful perspectives about legalized termination and reduction, using allusions to cult films and images from pop culture to explore dark realities and seldom discussed principles of survival and procreation. Its analysis is bolstered by frameworks adopted from feminism, film studies, queer theory, religious analysis, legal studies, criminal justice, social science, and economics. 606 $aAbortion$xSocial aspects 615 0$aAbortion$xSocial aspects. 676 $a363.46 700 $aCusack$b Carmen M.$0943938 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910812434603321 996 $aAbortion is the "A" word$94110239 997 $aUNINA