LEADER 01013nam--2200349---450- 001 990005568330203316 005 20121119133637.0 035 $a000556833 035 $aUSA01000556833 035 $a(ALEPH)000556833USA01 035 $a000556833 100 $a20121027d1964----km-y0itay50------ba 101 0 $aeng 102 $aGB 105 $ay|||z|||001yy 200 1 $aAristotle?s Poetics$ea course of eight lectures$fby Humphry House$grevised, with a preface, by Colin Hardie 210 $aLondon$cHart-Davis$d1964 215 $a128 p.$d19 cm 604 $aAristotele . Poetica$2BNCF 676 $a801.93 700 1$aHOUSE,$bHumphry$0165360 702 1$aHARDIE,$bColin 801 0$aIT$bsalbc$gISBD 912 $a990005568330203316 951 $aXV.8. 111$b222537 L.M.$cXV.8. 959 $aSE 969 $aFSO 979 $c20121027$lUSA01$h1533 979 $c20121027$lUSA01$h1614 979 $aANNAMARIA$b90$c20121119$lUSA01$h1336 996 $aAristotle?s Poetics$91132142 997 $aUNISA LEADER 05198nam 22006494a 450 001 9910810147603321 005 20240404142352.0 010 $a981-277-806-3 035 $a(CKB)1000000000400552 035 $a(EBL)1679439 035 $a(OCoLC)879074114 035 $a(SSID)ssj0000217323 035 $a(PQKBManifestationID)11191091 035 $a(PQKBTitleCode)TC0000217323 035 $a(PQKBWorkID)10203173 035 $a(PQKB)10343425 035 $a(MiAaPQ)EBC1679439 035 $a(WSP)00004880 035 $a(Au-PeEL)EBL1679439 035 $a(CaPaEBR)ebr10201190 035 $a(CaONFJC)MIL505435 035 $a(EXLCZ)991000000000400552 100 $a20020514d2002 uy 0 101 0 $aeng 135 $aur|n|---||||| 181 $ctxt 182 $cc 183 $acr 200 00$aOxide reliability $ea summary of silicon oxide wearout, breakdown, and reliability /$feditor, D.J. Dumin 205 $a1st ed. 210 $a[River Edge, NJ] $cWorld Scientific$dc2002 215 $a1 online resource (281 p.) 225 1 $aSelected topics in electronics and systems ;$vv. 23 300 $aDescription based upon print version of record. 311 $a981-02-4842-3 320 $aIncludes bibliographical references. 327 $aCONTENTS ; Foreword ; Oxide Wearout, Breakdown, and Reliability; 1. Introduction ; 2. Oxide Breakdown ; 3. Oxide Leakage Currents ; 4. Oxide Trap Generation ; 5. Statistics of Wearout and Breakdown ; 6. Reliability ; 7. Summary ; Reliability of Flash Nonvolatile Memories ; 1. Introduction 327 $a2. Implications to Scaling and Reliability 3. Dielectric Damage Caused by Program/Erase Cycling ; 4. Overerase Effects ; 5. Stress Induced Leakage Current and Post-Cycling Data Retention ; 6 Other Failure Mechanisms ; 7. Conclusions ; Physics and Chemistry of Intrinsic Time-Dependent Dielectric Breakdown in SiO2 Dielectrics 327 $a1. Introduction 2. Time-Dependent Dielectric Breakdown ; 3. Chemistry and Physics of Amorphous SiO2 ; 4. Molecular Models for Dielectric Degradation ; 5. Electron and Hole Injection into SiO2 ; 6. Role of Hole Capture in TDDB ; 7. Complementary Model for TDDB 327 $a8. Conditions Under Which the E and 1/E Models are Valid 9. Extention of the Complementary Model to Hyper-Thin SiO2; 10. Summary ; Breakdown Modes and Breakdown Statistics of Ultrathin SiO2 Gate Oxides; 1. Introduction ; 2. Breakdown related to the generation of oxide defects ; 3. Modeling the Breakdown Statistics 327 $a4. Breakdown modes: Soft breakdown and Hard Breakdown 5. Breakdown effectiveness, energy dissipation and device failure; 6. Conclusions ; MOSFET Gate Oxide Reliability: Anode Hole Injection Model and Its Applications ; 1. Introduction ; 2. Development of the Anode Hole Injection Model ; 3. Recent Developments 327 $a4. Gross-Defect Related Breakdown and Burn-in Model 330 $a This book presents in summary the state of our knowledge of oxide reliability. The articles have been written by experts who are among the most knowledgeable in the field. The book will be an invaluable aid to reliability engineers and manufacturing engineers, helping them to produce and characterize reliable oxides. It can be used as an introduction for new engineers interested in oxide reliability, besides being a reference for engineers already engaged in the field.
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