LEADER 05038oam 2200577 450 001 9910810034703321 005 20190911112729.0 010 $a981-4541-86-9 035 $a(OCoLC)860388168 035 $a(MiFhGG)GVRL8QYV 035 $a(EXLCZ)992550000001114709 100 $a20141111h20132013 uy 0 101 0 $aeng 135 $aurun|---uuuua 181 $ctxt 182 $cc 183 $acr 200 10$aFrontiers in electronics $eselected papers from the Workshop on Frontiers in Electronics 2011 (WOFE-11), San Juan, Puerto-Rico, 18-21 December 2011 /$feditors, Sorin Cristoloveanu, IMEP, INP Grenoble, MINATEC, France, Michael S. Shur, Rensselaer Polytechnic Institute, USA 210 1$aNew Jersey :$cWorld Scientific,$d[2013] 210 4$d?2013 215 $a1 online resource (viii, 264 pages) $cillustrations (some color) 225 1 $aSelected topics in electronics and systems ;$vvol. 53 300 $aDescription based upon print version of record. 311 $a981-4536-84-9 311 $a1-299-83330-6 320 $aIncludes bibliographical references and index. 327 $aPreface; CONTENTS; Le?vy Flight of Holes in InP Semiconductor Scintillator S. Luryi and A. Subashiev; 1. Introduction; 2. Photon Assisted Random Walk of Minority Carriers in InP; 2.1. Diffusion equation with a recycling term; 2.2. Jump distribution; 2.3. Stable distribution of minority carriers; 2.4. Stationary hole distribution for constant excitation; 3. Transmission and Reflection Luminescence Spectra; 4. Luminescence Filtering and Urbach Tails; 5. Photon Collection Efficiency in InP Scintillator; 6. Layered Scintillator Based on Photon-Assisted Transport of Holes to Radiation Sites 327 $a3. Lasing Characteristics4. Conclusions; Reference; GaN Based 3D Core-Shell LEDs X. Wang, S. Li, S. Fu?ndling, J. Wei, M. Erenburg, J. Ledig, H. H. Wehmann, A. Waag, W. Bergbauer, M. Mandl, M. Strassburg and U. Steegmu?ller; 1. Introduction; 2. GaN Based 3D LEDs on Si Substrate; 2.1. GaN based 3D core-shell LEDs on deep etched Si substrate; 2.2. Growth of GaN 3D structure on Si substrate; 3. Growth of GaN 3D Structure on Sapphire Substrate; 3.1. Carrier gas, polarity and its influence on growth of GaN 3D structure 327 $a3.2. Mixed polar GaN columns and Polarity analysis by photo-assisted Kelvin probe force microscopy3.3. Growth of single nitride polar GaN columns; 4. Growth and Characterization of GaN Based 3D Core-Shell LED on Sapphire Substrate; 5. Summary and Outlook; Acknowledgements; References; Progress in SiC Materials/Devices and Their Competition D. K. Schroder; 1. Introduction; 2. Materials; 2.1. Bulk Defects; 2.2. Carrier Lifetimes; 2.3. Oxide and Interface Traps; 3. SiC Devices; 3.1. Schottky Diodes; 3.2. MOSFETs; 3.3. Junction FETs; 4. The Competition; 4.1. Silicon; 4.2. Gallium Nitride 327 $a5. Cosmic Ray Induced Failures6. Summary; Acknowledgments; References; Performance and Applications of Deep UV LED M. Shatalov, A. Lunev, X. Hu, O. Bilenko, I. Gaska, W. Sun, J. Yang, A. Dobrinsky, Y. Bilenko, R. Gaska and M. Shur; 1. Introduction; 2. DUV LED Efficiency; 3. DUV LED Fabrication; 4. Thermal Analysis of DUV LED; 5. DUV LED Sterilization; 6. Conclusion; Acknowledgments; Appendix A. Calculation of Thermal Resistances; Appendix B. Thermal Conductivity of AlxGa1-xN Semiconductor; References 327 $aOrdered GaN/InGaN Nanorods Arrays Grown by Molecular Beam Epitaxy for Phosphor-Free White Light Emission S. Albert, A. Bengoechea-Encabo, M. A. Sanchez-Garci?a, F. Barbagini, E. Calleja, E. Luna, A. Trampert, U. Jahn,P. Lefebvre, L. L. Lo?pez, S. Estrade?, J. M. Rebled, F. Peiro?,G. Nataf, P. de Mierry and J. Zun?iga-Pe?rez 330 $aFrontiers in Electronics includes the best papers of WOFE-11 invited by the Editors and down selected after the peer review process. This book is conceived to make available in the international arena extended versions of selected, high impact talks. The papers are divided into four sections: advanced terahertz and photonics devices; silicon and germanium on insulator and advanced CMOS and MOSHFETs; nanomaterials and nanodevices; wide band gap technology for high power and UV photonics. 410 0$aSelected topics in electronics and systems ;$vvol. 53. 606 $aElectronics$xTechnological innovations$vCongresses 606 $aNanoelectromechanical systems$vCongresses 606 $aOptoelectronics$vCongresses 606 $aMetal oxide semiconductors, Complementary$vCongresses 615 0$aElectronics$xTechnological innovations 615 0$aNanoelectromechanical systems 615 0$aOptoelectronics 615 0$aMetal oxide semiconductors, Complementary 676 $a600 702 $aCristoloveanu$b Sorin 702 $aShur$b Michael 712 12$aWorkshop on Frontiers in Electronics 801 0$bMiFhGG 801 1$bMiFhGG 906 $aBOOK 912 $a9910810034703321 996 $aFrontiers in electronics$91929454 997 $aUNINA