LEADER 05649nam 2200745 450 001 9910808289103321 005 20230822204333.0 010 $a1-118-84479-3 010 $a1-118-84478-5 010 $a1-118-84477-7 035 $a(CKB)2560000000251004 035 $a(EBL)1724874 035 $a(SSID)ssj0001261109 035 $a(PQKBManifestationID)11685814 035 $a(PQKBTitleCode)TC0001261109 035 $a(PQKBWorkID)11312095 035 $a(PQKB)11263821 035 $a(PQKBManifestationID)16045150 035 $a(PQKB)20653788 035 $a(OCoLC)884595415 035 $a(MiAaPQ)EBC1724874 035 $a(DLC) 2014023079 035 $a(Au-PeEL)EBL1724874 035 $a(CaPaEBR)ebr10888205 035 $a(CaONFJC)MIL622078 035 $a(OCoLC)882778238 035 $a(PPN)188590943 035 $a(EXLCZ)992560000000251004 100 $a20140708h20152015 uy 0 101 0 $aeng 135 $aurcnu|||||||| 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 00$aGaN transistors for efficient power conversion /$fAlex Lidow [and three others] 205 $aSecond edition. 210 1$aChichester, England :$cWiley,$d2015. 210 4$dİ2015 215 $a1 online resource (269 pages) 225 0 $aTHEi Wiley ebooks. 300 $aDescription based upon print version of record. 311 $a1-306-90827-2 311 $a1-118-84476-9 320 $aIncludes bibliographical references at the end of each chapters and index. 327 $aGaN Transistors for Efficient Power Conversion; Contents; Foreword; Acknowledgments; 1 GaN Technology Overview; 1.1 Silicon Power MOSFETs 1976-2010; 1.2 The GaN Journey Begins; 1.3 Why Gallium Nitride?; 1.3.1 Band Gap (Eg); 1.3.2 Critical Field (Ecrit); 1.3.3 On-Resistance (RDS(on)); 1.3.4 The Two-Dimensional Electron Gas; 1.4 The Basic GaN Transistor Structure; 1.4.1 Recessed Gate Enhancement-Mode Structure; 1.4.2 Implanted Gate Enhancement-Mode Structure; 1.4.3 pGaN Gate Enhancement-Mode Structure; 1.4.4 Cascode Hybrid Enhancement-Mode Structure; 1.4.5 Reverse Conduction in HEMT Transistors 327 $a1.5 Building a GaN Transistor 1.5.1 Substrate Material Selection; 1.5.2 Growing the Heteroepitaxy; 1.5.3 Processing the Wafer; 1.5.4 Making Electrical Connection to the Outside World; 1.6 Summary; References; 2 GaN Transistor Electrical Characteristics; 2.1 Introduction; 2.2 Key Device Parameters; 2.2.1 Breakdown Voltage (BVDSS) and Leakage Current (IDSS); 2.2.2 On-Resistance (RDS(on)); 2.2.3 Threshold Voltage (VGS(th) or Vth); 2.3 Capacitance and Charge; 2.4 Reverse Conduction; 2.5 Thermal Resistance; 2.6 Transient Thermal Impedance; 2.7 Summary; References; 3 Driving GaN Transistors 327 $a3.1 Introduction 3.2 Gate Drive Voltage; 3.3 Bootstrapping and Floating Supplies; 3.4 dv/dt Immunity; 3.5 di/dt Immunity; 3.6 Ground Bounce; 3.7 Common Mode Current; 3.8 Gate Driver Edge Rate; 3.9 Driving Cascode GaN Devices; 3.10 Summary; References; 4 Layout Considerations for GaN Transistor Circuits; 4.1 Introduction; 4.2 Minimizing Parasitic Inductance; 4.3 Conventional Power Loop Designs; 4.4 Optimizing the Power Loop; 4.5 Paralleling GaN Transistors; 4.5.1 Paralleling GaN Transistors for a Single Switch; 4.5.2 Paralleling GaN Transistors for Half-Bridge Applications; 4.6 Summary 327 $aReferences 5 Modeling and Measurement of GaN Transistors; 5.1 Introduction; 5.2 Electrical Modeling; 5.2.1 Basic Modeling; 5.2.2 Limitations of Basic Modeling; 5.2.3 Limitations of Circuit Modeling; 5.3 Thermal Modeling; 5.3.1 Improving Thermal Performance; 5.3.2 Modeling of Multiple Die; 5.3.3 Modeling of Complex Systems; 5.4 Measuring GaN Transistor Performance; 5.4.1 Voltage Measurement Requirements; 5.4.2 Current Measurement Requirement; 5.5 Summary; References; 6 Hard-Switching Topologies; 6.1 Introduction; 6.2 Hard-Switching Loss Analysis; 6.2.1 Switching Losses 327 $a6.2.2 Output Capacitance (COSS) Losses 6.2.3 Gate Charge (QG) Losses; 6.2.4 Reverse Conduction Losses (PSD); 6.2.5 Reverse Recovery (QRR) Losses; 6.2.6 Total Hard-Switching Losses; 6.2.7 Hard-Switching Figure of Merit; 6.3 External Factors Impacting Hard-Switching Losses; 6.3.1 Impact of Common-Source Inductance; 6.3.2 Impact of High Frequency Power-Loop Inductance on Device Losses; 6.4 Reducing Body Diode Conduction Losses in GaN Transistors; 6.5 Frequency Impact on Magnetics; 6.5.1 Transformers; 6.5.2 Inductors; 6.6 Buck Converter Example; 6.6.1 Output Capacitance Losses 327 $a6.6.2 Gate Losses (PG) 330 $aThe first edition of GaN Transistors for Efficient Power Conversion was self-published by EPC in 2012, and is currently the only other book to discuss GaN transistor technology and specific applications for the technology. More than 1,200 copies of the first edition have been sold through Amazon or distributed to selected university professors, students and potential customers, and a simplified Chinese translation is also available. The second edition has expanded emphasis on applications for GaN transistors and design considerations. This textbook provides technical and application- 606 $aField-effect transistors 606 $aGallium nitride 615 0$aField-effect transistors. 615 0$aGallium nitride. 676 $a621.3815/284 700 $aLidow$b Alex$01663715 702 $aLidow$b Alex 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910808289103321 996 $aGaN transistors for efficient power conversion$94021237 997 $aUNINA