LEADER 01754oam 2200493I 450 001 9910711753803321 005 20190104091151.0 035 $a(CKB)5470000002486533 035 $a(OCoLC)954175291 035 $a(EXLCZ)995470000002486533 100 $a20160728d1907 ua 0 101 0 $aeng 135 $aur||||||||||| 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 10$aPollution of Illinois and Mississippi rivers by Chicago sewage $ea digest of the testimony taken in the case of the state of Missouri volume the state of Illinois and the sanitary district of Chicago /$fMarshall O. Leighton 210 1$a[Washington, D.C.] :$cDepartment of the Interior, United States Geological Survey,$d1907. 210 2$aWashington :$cGovernment Printing Office. 215 $a1 online resource (369 pages) 225 1 $aWater-supply and irrigation paper ;$vno. 194 225 1 $aSeries L, Quality of water ;$v20 320 $aIncludes bibliographical references and index. 517 $aPollution of Illinois and Mississippi rivers by Chicago sewage 606 $aWater$xPollution 606 $aSewage 606 $aWater$xPollution$2fast 607 $aChicago (Ill.) 607 $aIllinois River (Ill.) 607 $aMississippi River 615 0$aWater$xPollution. 615 0$aSewage. 615 7$aWater$xPollution. 700 $aLeighton$b Marshall Ora$f1874-1958,$01386000 712 02$aGeological Survey (U.S.), 801 0$bCOP 801 1$bCOP 801 2$bOCLCO 801 2$bOCLCF 801 2$bGPO 906 $aBOOK 912 $a9910711753803321 996 $aPollution of Illinois and Mississippi rivers by Chicago sewage$93547389 997 $aUNINA LEADER 04571nam 2200529 450 001 9910808185903321 005 20230803213639.0 010 $a1-68108-120-2 035 $a(CKB)3710000000495266 035 $a(EBL)4412616 035 $a(MiAaPQ)EBC4412616 035 $a(Au-PeEL)EBL4412616 035 $a(CaPaEBR)ebr11235874 035 $a(OCoLC)953657057 035 $a(EXLCZ)993710000000495266 100 $a20160811h20142014 uy 0 101 0 $aeng 135 $aur|n|---||||| 181 $2rdacontent 182 $2rdamedia 183 $2rdacarrier 200 00$aActive-matrix organic light-emitting display technologies /$fby Shuming Chen [and four others] 210 1$aSharjah, United Arab Emirates :$cBentham Science Publishers Ltd.,$d[2014] 210 4$dİ[2014] 215 $a1 online resource (211 p.) 225 0 $aFrontiers in Electrical Engineering,$x2452-1442 ;$vVolume 1 300 $aDescription based upon print version of record. 311 $a1-68108-121-0 320 $aIncludes bibliographical references at the end of each chapters and index. 327 $aCONTENTS; PREFACE ; LIST OF CONTRIBUTORS ; Introduction to Organic Light-Emitting Display Technologies ; INTRODUCTION; DEVELOPEMNT HISTORY OF OLEDS; BASIC PHYSICS OF OLEDS; Charge Carriers Injection; Charge Carriers Transportation ; Exciton Formation and Recombination ; Light Extraction from Devices ; FABRICATION AND CHARACTERIZATION OF OLEDS; APPLICATION OF OLEDS; Flat Panel Display; Solid-state Lighting; CONFLICT OF INTEREST; ACKNOWLEDGMENTS; REFERENCES; White Organic Light-Emitting Diodes for Display and Lighting Application ; WOLEDS FOR FULL COLOR DISPLAYS; WOLEDS FOR SOLID-STATE LIGHTING 327 $aAPPROACHES TO WHITE LIGHT EMISSIONMulti-emissive Layers; Single-emissive Layer; WOLEDs with Fluorescent-phosphorescent Hybrid Emitters ; Tandem WOLEDs; Side by Side WOLEDs; Color Converted WOLEDs; Excimer/Exciplex WOLEDs; CONFLICT OF INTEREST; ACKNOWLEDGMENTS; REFERENCES; Light Outcoupling Technologies ; INTRODUCTION; LIGHT DISTRIBUTION IN OLED; EXTERNAL EXTRACTION STRUCTURES; Truncated Square-pyramid Luminaire; Scattering Film; Sand-blasting Substrate; Microlens Array; INTERNAL EXTRACTION STRUCTURES; Internal Scattering Layer; Photonic Crystal Structure; Metal Nanoparticles; CONCLUSION 327 $aCONFLICT OF INTERESTACKNOWLEDGEMENTS; REFERENCES; Encapsulation Technologies ; INTRODUCTION; DARK SPOTS FORMATION MECHANISM; REQUIREMENT AND MEASUREMENT OF THE PERMEATION RATES; TRADITIONAL ENCAPSULATION TECHNOLOGY; THIN FILM ENCAPSUTION TECHNOLOGY; Si3N4/SiO2 Multilayer; Organic/Inorganic Multilayer; Atomic Layer Deposited (ALD) Film; CONCLUSION; CONFLICT OF INTEREST; ACKNOWLEDGEMENTS; REFERENCES; Thin Film Transistor Technology ; INTRODUCTION; HISTORY OF THIN FILM TRANSISTORS; HYDROGENATED AMORPHOUS SILICON TFT TECHNOLOGY; LOW TEMPERATURE POLYCRYSTALLLINE SILICON TFT TECHNOLOGY 327 $aSPC TechnologyMIC Technology; ELA Technology; Bridge Grain Technology; METAL OXIDE SEMICONDUCTOR TFTS; Zinc Oxide TFTs; Amorphous Oxide Semiconductors and TFTs; Zinc Tin Oxide; Indium Gallium Oxide; Indium Gallium Zinc Oxide; GaN TFTs; MoS2 TFTs; SUMMARY ; CONFLICT OF INTEREST; ACKNOWLEDGEMENTS; REFERENCES; Driving Schemes and Design Considerations for AMOLED ; CIRCUIT FUNDAMENTALS ; Resistor-Capacitor Circuit; Charging and Discharging RC Circuit; Capacitive Parasitics; TFT CIRCUIT CONSIDERATIONS; Operational Region; Transistor as a Switch; Transistor as a Current Source or Current Drain 327 $aOn ResistanceApproximation of TFT with an equivalent resistance; DESIGN CONSIDERATIONS FOR ACTIVE-MATRIX BACKPLANE; Brightness; Display Timing; Pixel Storage Capacitance; Design Expression; TFT CIRCUIT DESIGN TECHNIQUES; Bootstrap Circuit; CIRCUIT COMPENSATION AND LAYOUT DESIGN; CHALLENGE IN AMOLED DISPLAYS; Aging of OLED and TFT ; Threshold Voltage Shift; 2T1C Pixel Configuration; THRESHOLD VOLTAGE COMPENSATED AMOLED PIXEL; 3T1C Pixel Configuration; 4T1C Pixel Configuration; 5T2C Pixel Configuration; 6T1C Pixel Configuration; 6T1C Pixel Configuration with biased discharge method 327 $aCONFLICT OF INTEREST 410 0$aFrontiers in Electrical Engineering 606 $aLight emitting diodes 615 0$aLight emitting diodes. 676 $a621.381522 702 $aChen$b Shuming 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910808185903321 996 $aActive-matrix organic light-emitting display technologies$93997766 997 $aUNINA