LEADER 03196nam 22005895 450 001 996466866103316 005 20211005081527.0 010 $a3-540-39298-X 024 7 $a10.1007/BFb0084581 035 $a(CKB)1000000000437694 035 $a(SSID)ssj0000321386 035 $a(PQKBManifestationID)11230796 035 $a(PQKBTitleCode)TC0000321386 035 $a(PQKBWorkID)10263585 035 $a(PQKB)10554131 035 $a(DE-He213)978-3-540-39298-9 035 $a(MiAaPQ)EBC6587446 035 $a(Au-PeEL)EBL6587446 035 $a(OCoLC)1250084850 035 $a(PPN)155217860 035 $a(EXLCZ)991000000000437694 100 $a20100730d1985 u| 0 101 0 $ager 135 $aurnn|008mamaa 181 $ctxt 182 $cc 183 $acr 200 10$aArbeitstagung Bonn 1984$b[electronic resource] $eProceedings of the Meeting held by the Max-Planck-Institut für Mathematik, Bonn, June 15-22, 1984 /$fherausgegeben von Friedrich Hirzebruch, Joachim Schwermer, Silke Suter 205 $a1st ed. 1985. 210 1$aBerlin, Heidelberg :$cSpringer Berlin Heidelberg :$cImprint: Springer,$d1985. 215 $a1 online resource (481 S.) 225 1 $aLecture Notes in Mathematics,$x0075-8434 ;$v1111 300 $aBibliographic Level Mode of Issuance: Monograph 311 $a0-387-15195-8 311 $a3-540-15195-8 327 $ato non commutative differential geometry -- Special values of hecke L-functions and abelian integrals -- An introduction to infinitesimal variations of hodge structures -- New dimensions in geometry -- Commentary on the article of manin -- The mandelbrot set in a model for phase transitions -- Recent developments in representation theory -- Loop groups -- Some recent results in complex manifold theory related to vanishing theorems for the semipositive case -- Groups and group functors attached to kac-moody data -- Modular points, modular curves, modular surfaces and modular forms -- Eigenvalues of the dirac operator -- Manifolds of non positive curvature -- Metrics with holonomy G2 or spin (7) -- On riemannian metrics adapted to three-dimensional contact manifolds -- 4-Manifolds with indefinite intersection form -- Arithmetische Kompaktifizierung des Modulraums der abelschen Varietäten -- The schottky problem -- Vojta?s conjecture -- A counterexample in 3-space to a conjecture of H. Hopf -- The topology and geometry of the moduli space of Riemann surfaces -- Addendum. 410 0$aLecture Notes in Mathematics,$x0075-8434 ;$v1111 606 $aMathematics 606 $aMathematics, general$3https://scigraph.springernature.com/ontologies/product-market-codes/M00009 615 0$aMathematics. 615 14$aMathematics, general. 676 $a510 702 $aHirzebruch$b Friedrich$4edt$4http://id.loc.gov/vocabulary/relators/edt 702 $aSchwermer$b Joachim$4edt$4http://id.loc.gov/vocabulary/relators/edt 702 $aSuter$b Silke$4edt$4http://id.loc.gov/vocabulary/relators/edt 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a996466866103316 996 $aArbeitstagung Bonn 1984$9343863 997 $aUNISA LEADER 03799nam 2200733Ia 450 001 9910808037403321 005 20241120173247.0 010 $a9786612382185 010 $a9781282382183 010 $a1282382187 010 $a9780470824092 010 $a0470824093 010 $a9780470824085 010 $a0470824085 024 7 $a10.1002/9780470824092 035 $a(CKB)1000000000799847 035 $a(EBL)479860 035 $a(SSID)ssj0000366925 035 $a(PQKBManifestationID)11275066 035 $a(PQKBTitleCode)TC0000366925 035 $a(PQKBWorkID)10418689 035 $a(PQKB)11324759 035 $a(MiAaPQ)EBC479860 035 $a(CaBNVSL)mat05453758 035 $a(IDAMS)0b00006481237fee 035 $a(IEEE)5453758 035 $a(Au-PeEL)EBL479860 035 $a(CaPaEBR)ebr10325826 035 $a(CaONFJC)MIL238218 035 $a(OCoLC)669008259 035 $a(PPN)254409873 035 $a(Perlego)2786764 035 $a(EXLCZ)991000000000799847 100 $a20081027d2009 uy 0 101 0 $aeng 135 $aur|n|---||||| 181 $ctxt 182 $cc 183 $acr 200 10$aTransient-induced latchup in CMOS integrated circuits /$fMing-Dou Ker and Sheng-Fu Hsu 205 $a1st ed. 210 $aSingapore ;$aHoboken, NJ $cWiley$dc2009 215 $a1 online resource (265 p.) 300 $aDescription based upon print version of record. 311 08$a9780470824078 311 08$a0470824077 320 $aIncludes bibliographical references and index. 327 $aPhysical Mechanism of TLU under the System-Level ESD Test -- Component-Level Measurement for TLU under System-Level ESD Considerations -- TLU Dependency on Power-Pin Damping Frequency and Damping Factor in CMOS Integrated Circuits -- TLU in CMOS ICs in the Electrical Fast Transient Test -- Methodology on Extracting Compact Layout Rules for Latchup Prevention -- Special Layout Issues for Latchup Prevention -- TLU Prevention in Power-Rail ESD Clamp Circuits -- Appendix A: Practical Application Extractions of Latchup Design Rules in a 0.18-mm 1.8 V/3.3V Silicided CMOS Process. 330 $a"Transient-Induced Latchup in CMOS Integrated Circuits equips the practicing engineer with all the tools needed to address this regularly occurring problem while becoming more proficient at IC layout. Ker and Hsu introduce the phenomenon and basic physical mechanism of latchup, explaining the critical issues that have resurfaced for CMOS technologies. Once readers can gain an understanding of the standard practices for TLU, Ker and Hsu discuss the physical mechanism of TLU under a system-level ESD test, while introducing an efficient component-level TLU measurement setup. The authors then present experimental methodologies to extract safe and area-efficient compact layout rules for latchup prevention, including layout rules for I/O cells, internal circuits, and between I/O and internal circuits. The book concludes with an appendix giving a practical example of extracting layout rules and guidelines for latchup prevention in a 0.18-micrometer 1.8V/3.3V silicided CMOS process."--Publisher's description. 606 $aMetal oxide semiconductors, Complementary$xDefects 606 $aMetal oxide semiconductors, Complementary$xReliability 615 0$aMetal oxide semiconductors, Complementary$xDefects. 615 0$aMetal oxide semiconductors, Complementary$xReliability. 676 $a621.3815 676 $a621.39/5 700 $aKer$b Ming-Dou$01656164 701 $aHsu$b Sheng-Fu$01656165 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910808037403321 996 $aTransient-induced latchup in CMOS integrated circuits$94008872 997 $aUNINA