LEADER 00990nam0-22003131i-450- 001 990001121780403321 035 $a000112178 035 $aFED01000112178 035 $a(Aleph)000112178FED01 035 $a000112178 100 $a20000920d1995----km-y0itay50------ba 101 0 $aeng 200 1 $aRadiation Detectors and their Uses$eProceedings of the 9th Workshop on Radiation Detectors and Their Uses$e17th - 19th January, 1995 : KEK, Tsukuba, Ibaraki JAPAN$fEdited by M. Miyajima ... [et al.] 210 $aTsukuba$cKEK$d1995 215 $aiv, 339 p.$cill.$d30 cm 225 1 $aKEK Proceedings$v95-1 610 0 $aParticelle elementari 610 0 $aRaggi cosmici 610 0 $aAcceleratori 676 $a539.72$a539.73 702 1$aMiyajima,$bM. 801 0$aIT$bUNINA$gRICA$2UNIMARC 901 $aBK 912 $a990001121780403321 952 $a33-418$b20069$fFI1 959 $aFI1 996 $aRadiation Detectors and their Uses$9336989 997 $aUNINA DB $aING01 LEADER 05740nam 2200649 450 001 9910806108403321 005 20230803205526.0 010 $a3-03826-626-4 035 $a(CKB)3710000000251947 035 $a(EBL)1910939 035 $a(SSID)ssj0001388152 035 $a(PQKBManifestationID)12012402 035 $a(PQKBTitleCode)TC0001388152 035 $a(PQKBWorkID)11383563 035 $a(PQKB)11183159 035 $a(Au-PeEL)EBL1910939 035 $a(CaPaEBR)ebr10951269 035 $a(OCoLC)893677848 035 $a(MiAaPQ)EBC1910939 035 $a(EXLCZ)993710000000251947 100 $a20141016h20142014 uy 0 101 0 $aeng 135 $aurcnu|||||||| 181 $ctxt 182 $cc 183 $acr 200 10$aUltra clean processing of semiconductor surfaces XII $eselected, peer reviewed papers from the 12th International Symposium on Ultra Clean Processing of Semiconductor Surfaces (UCPSS) September 21-24, 2014, Brussels, Belgium /$fedited by Paul Mertens, Marc Meuris and Marc Heyns 210 1$aPfaffikon, Switzerland :$cTTP,$d2014. 210 2$aEnfield, New Hampshire :$cTrans Tech Publications Ltd,$d[date of distribution not identified] 210 4$dİ2014 215 $a1 online resource (331 p.) 225 1 $aSolid State Phenomena,$x1662-7799 ;$vVolume 219 300 $aDescription based upon print version of record. 311 1 $a3-03835-242-X 320 $aIncludes bibliographical references at the end of each chapters and index. 327 $aUltra Clean Processing of Semiconductor Surfaces XII; Preface, Committee and Acknowledgement; Table of Contents; Chapter 1: Cleaning for FEOL Applications; Necessity of Cleaning and its Application in Future Memory Devices; Removal of Interfacial Layer in HfO2 Gate Stack by Post-Gate Cleaning Using NF3/NH3 Dry Cleaning Technique; Catalyst Assisted Low Temperature Pre Epitaxial Cleaning for Si and SiGe Surfaces; HF-Last Wet Clean in Combination with a Low Temperature GeH4-Assisted HCl In Situ Clean Prior to Si0.8Ge0.2-on-Si Epitaxial Growth 327 $aRetardation Phenomenon of Oxide Removal during the Formation of Dual Gate Oxide via PR-Mask Wet Etching Aluminum Reduction in SC1; Metal Removal Efficiency in Deep Submicron Trenches by Wet Chemicals; Impact of Surface Treatment of Si3N4 on Subsequent SiO2 Deposition; Operation of a New Electrolyzed Cell Using Boron Doped Diamond Electrodes ; Chapter 2: Cleaning for FEOL Applications: Beyond-Si Active Area; InGaAs (110) Surface Cleaning Using Atomic Hydrogen; Surface Chemistry of GaAs(100) and InAs(100) Etching with Tartaric Acid; Nanoscale Etching and Reoxidation of InAs 327 $aPassivation of In Sb(100) with 1-Eicosanethiol Self-Assembled Monolayers Cross-Contamination Risk Evaluation during Fabrication of III-V Devices in a Silicon Processing Environment; Surface Cleaning of Graphene by CO2 Cluster; Chapter 3: Wet Etching for FEOL Applications; Process Control Challenges of Wet Etching Large MEMS Si Cavities; Wet Etch Rate Behavior of Poly-Si in TMAH Solution at Various Ambient Gas Conditions; Advanced Monitoring of TMAH Solution; Effect of Dissolved Oxygen for Advanced Wet Processing; Watermark Formation on Bare Silicon: Impact of Illumination and Substrate Doping 327 $aSelective Nitride Etching with Phosphoric and Sulfuric Acid Mixtures Using a Single-Wafer Wet Processor Single Wafer Selective Silicon Nitride Removal with Phosphoric Acid and Steam; Pt Etching Method at Low Temperature Using Electrolyzed Sulfuric Acid Solution; Nickel Selective Etch for Contacts on Ge Based Devices; Chapter 4: Wet Processing of High Aspect Ratio Structures; Study of Wetting of Nanostructures Using Decoration by Etching; Impact of Electrostatic Effects on Wet Etching Phenomenon in Nanoscale Region; Freeze Drying of High Aspect Ratio Structures 327 $aChapter 5: Fluid Dynamics, Cleaning Mechanics Effect of DI-Water Dilution and Etchant Arm Movement on Spinning Type Wet Etch; Effect of Nozzle Distance and Fluid Flow Rate in Jet Spray Wafer Cleaning Process; Effects of Chamber Pressure on the Performance of CO2 Beam Cleaning; Physical Chemistry of Water Droplets in Wafer Cleaning with Low Water Use; Metal Etch in Advanced Immersion Tank with Precision Uniformity Using Agitation and Wafer Rotation; Novel Slurry Injection System for Improved Slurry Flow and Reduced Defects in CMP 327 $aEffect of Viscoelasticity of PVA Brush on Friction during Post-CMP Cleaning: A Guideline for Nodule Configuration 330 $aCollection of selected, peer reviewed papers from the 12th InternationalSymposium on Ultra Clean Processing of Semiconductor Surfaces (UCPSS), September 21-24, 2014, Brussels, Belgium. The 71 papers are grouped as follows: Chapter 1: Cleaning for FEOL Applications, Chapter 2: Cleaning for FEOL Applications: Beyond-Si Active Area, Chapter 3: Wet Etching for FEOL Applications, Chapter 4: Wet Processing of High Aspect Ratio Structures, Chapter 5: Fluid Dynamics, Cleaning Mechanics, Chapter 6: Photo Resist Performance and Rework, Chapter 7: Cleaning for BEOL Interconnect Applications, Chapter 8: C 410 0$aDiffusion and defect data.$nPt. B,$pSolid state phenomena ;$vVolume 219. 606 $aSemiconductors$vCongresses 615 0$aSemiconductors 676 $a621.38152 702 $aMertens$b Paul 702 $aMeuris$b Marc 702 $aHeyns$b Marc 712 12$aInternational Symposium on Ultra Clean Processing of Semiconductor Surfaces 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910806108403321 996 $aUltra clean processing of semiconductor surfaces XII$94036183 997 $aUNINA