LEADER 02563nam 2200421 450 001 9910795452803321 005 20210226095152.0 010 $a3-8325-9478-7 035 $a(CKB)4340000000244390 035 $a(MiAaPQ)EBC5247140 035 $a58a1c68b-e5bc-40b7-ab3b-3edeb0dd2d03 035 $a(EXLCZ)994340000000244390 100 $a20180509d2015 uy 0 101 0 $aeng 135 $aurcnu|||||||| 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 10$aElectrical characterisation of ferroelectric field effect transistors based on ferroelectric HfO2 thin films /$fEkaterina Yurchuk 210 1$aBerlin :$cLogos Verlag,$d[2015] 215 $a1 online resource (x, 170 pages) 225 0 $aResearch at NaMLab 300 $aPublicationDate: 20150630 311 $a3-8325-4003-2 330 $aLong description: Ferroelectric field effect transistor (FeFET) memories based on a new type of ferroelectric material (silicon doped hafnium oxide) were studied within the scope of the present work. Utilisation of silicon doped hafnium oxide (Si:HfO raisebox-0.5ex scriptsize 2) thin films instead of conventional perovskite ferroelectrics as a functional layer in FeFETs provides compatibility to the CMOS process as well as improved device scalability. The influence of different process parameters on the properties of Si:HfO raisebox-0.5ex scriptsize 2 thin films was analysed in order to gain better insight into the occurrence of ferroelectricity in this system. A subsequent examination of the potential of this material as well as its possible limitations with the respect to the application in non-volatile memories followed. The Si:HfO raisebox-0.5ex scriptsize 2-based ferroelectric transistors that were fully integrated into the state-of-the-art high-k metal gate CMOS technology were studied in this work for the first time. The memory performance of these devices scaled down to 28 nm gate length was investigated. Special attention was paid to the charge trapping phenomenon shown to significantly affect the device behaviour. 606 $aHafnium 606 $aFerroelectric crystals 615 0$aHafnium. 615 0$aFerroelectric crystals. 676 $a661.0514 700 $aYurchuk$b Ekaterina$01551772 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910795452803321 996 $aElectrical characterisation of ferroelectric field effect transistors based on ferroelectric HfO2 thin films$93811430 997 $aUNINA