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100   $a20170929h20162016  uy             0
101 0 $aeng
135   $aurcnu||||||||
181   $2rdacontent
182   $2rdamedia
183   $2rdacarrier
200 10$aIndium phosphide HBT in thermally optimized periphery for applications up to 300 GHz /$fvorgelegt von M. Eng. and Tech. Ksenia Nosaeva
205   $a1. Auflage.
210  1$aGottingen, [Germany] :$cCuvillier Verlag,$d2016.
210  4$dİ2016
215   $a1 online resource (155 pages) $cillustrations (some color), tables, graphs
225 0 $aInnovationen mit Mikrowellen und Licht. Forschungsberichte aus dem Ferdinand-Braun-Institut, Leibniz-Institut fur Hochstfrequenztechnik ;$vBand 36
311   $a3-7369-9287-4 
320   $aIncludes bibliographical references.
606   $aModulation-doped field-effect transistors
615  0$aModulation-doped field-effect transistors.
676   $a621.3815284
700   $aNosaeva$b Ksenia$01506513
801  0$bMiAaPQ
801  1$bMiAaPQ
801  2$bMiAaPQ
906   $aBOOK
912   $a9910794942703321
996   $aIndium phosphide HBT in thermally optimized periphery for applications up to 300 GHz$93736790
997   $aUNINA